PAM XIAMEN offers 200mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity. Below are just some of our recent 200mm silicon wafer sale specials. 8″ silicon wafer Dia.: 200+/-0.5mm Type: P Ori.: <100> Res.: 1000-3000 ohm.cm Thk.: 705-745um V-notch Surface: Polished/Etched MFG: MEMC 200mm Silicon from PAM XIAMEN 200mm N/Ph [...]
2019-02-20메타 저자
PAM-XIAMEN can offer 2” InGaN/GaN quantum well blue laser diode wafer on sapphire or silicon substrate as follows. The blue GaN LD wafer for commercial applications illustrates the great potential of III-V epitaxial wafers. 1. Specification of 440-460nm Blue GaN LD wafer PAM190909-GAN-LD Item Descriptions Materials Substrate blue laser 440-460nm InGaN 2 inch Sapphire substrate*** GaN Blue LD EPI Wafer Spec Spec LD Epitaxial Wafer Size Growth MOCVD Diameter 50.8 ± 0.2 [...]
2018-08-22메타 저자
PAM XIAMEN은 GaP 기판(110)을 제공합니다. GaP 웨이퍼, 비도핑(110) 10x10x0.45mm, 1sp GaP 웨이퍼, 비도핑(110) 10x10x0.5mm, 2sp GaP 웨이퍼, 비도핑(110) 5x5x0.2mm, 2sp GaP 웨이퍼, 비도핑(110) 5x5x0.3mm , 1sp” GaP 웨이퍼, 비도핑(110) 5x5x0.3 mm, 2sp 자세한 내용은 [...]
2019-04-22메타 저자
As the basis for making photovoltaic cells and integrated circuits, silicon wafer cleaning is very important. The effect of cleaning directly affects the final performance, efficiency and stability of photovoltaic cells and integrated circuits. Cleaning the silicon wafer not only removes impurities on the [...]
2022-06-24메타 저자
PAM XIAMEN offers 6″ FZ Silicon Wafer with Diameter 150mm, Both Side Etched Silicon wafers, per SEMI Prime, E/E 6″ (150.0±0.2mm)Ø×400±25µm, FZ n-type Si:P[100]±0.5°, Ro=(1-5)Ohmcm, Carbon<2E16 /cm³, Oxygen<2E16 /cm³, TTV<12µm, Bow<40µm, Warp<50µm, Bothsidesetched, One SEMI Flat (57.5mm), Sealed in Empak or equivalent cassette, MCC Lifetime>1000µs. For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-10메타 저자
PAM XIAMEN offers 4″ Monocrystalline Silicon Wafer with Thermal oxide 20nm 4inch diameter wafer made of monocrystalline silicon with isolation oxide Diameter 101.6mm Polishing: one-sided for microelectronics Type of conductivity and alloying: not specified Surface orientation: not specified Primary and secondary flat orientation: not specified Thickness: 675 microns±20 microns Wedge (TTV): less than 15 microns TTV<15μm Distortion: less than 35 microns Thickness of the isolation oxide: at least 20 nm Front side: polished. Back side: lapped-etched For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-17메타 저자
