News

LED MR16 Lamp Made by GaN on GaN Technology

Soraa, the world’s leading developer of GaN on GaN （ gallium nitride on gallium nitride ） – solid state lighting technology, announced the launch of its flagship product, the Soraa LED MR16 lamp. The new product is the first LED lamp to provide superior performance to a traditional halogen MR16. It [...]

2012-05-21 Read more...

What is GaN？

GaN(Gallium nitride), which is a compound semiconductor,it is a hard, high melting point materials, the melting point of about 1700 ° C, GaN is a high degree of ionizationof III-Vcompound (0.5 or 0.43). At atmospheric pressure, the GaN crystal is generally hexagonal wurtzite structure. In a cell four atoms, the atomic volume is about halfthat of the GaAs. GaN is Non-Toxic. Basic Parameters for Wurtzite crystal structure at 300K: Breakdown field ~5 x 106 V cm-1 Mobility electrons =< 1000 cm2 V-1 s-1 Mobility holes =< 200 cm2 V-1 s-1 Diffusion coefficient electrons 25 cm2 s-1 Diffusion coefficient holes 5 cm2 s-1 Diffusion [...]

2012-05-21 Read more...

What is GaAs?

What is GaAs?   GaAs(Gallium arsenide) is a compound semiconductor material,a mixture of two elements, gallium (Ga) and arsenic (As). The uses of Gallium arsenide are varied and include being used in LED/LD, field-effect transistors (FETs), and integrated circuits (ICs).   GaAs Basic Parameters at 300K Crystal structure Zinc Blende Group of symmetry Td2-F43m Number of atoms in 1 [...]

2012-05-14 Read more...

PAM-XIAMEN has announced 6″GaAs epi wafer on mass production

PAM-XIAMEN  has announced his 6” GaAs epi wafer are on mass production for PHEMTs and MHEMTs (Pseudomorphic and metamorphic high-electron mobility transistors) ,HBTs(Heterojunction bipolar transistors), MESFETs (Metal-semiconductor field effect transistors) and other device,grown by molecular beam epitaxy (MBE) systems. The GaAs-pHEMT is widely used for high frequency switching devices in wireless systems like [...]

2012-05-11 Read more...

Osram Laboratory Reports 142 lm/W Efficiency Record for Warm

Osram Laboratory Reports 142 lm/W Efficiency Record for Warm White LED Light Source March 15, 2011…Osram Opto Semiconductors reports that it has set a new laboratory record of 142 lm/W for the efficiency of a warm white LED light source. The LED with a correlated color temperature (CCT) of 2755 [...]

2012-03-06 Read more...

2″ Free Standing Gallium Nitride (GaN) Substrate

2″ Free Standing Gallium Nitride (GaN) Substrate   PAM-XIAMEN,a leading supplier of GaN serie,is pleased to announce n+ c-plane 2″ SIZE Free standing gallium nitride (GaN) substrate with low Marco Defect Density <=2cm-2 are on mass production. (more…)

2012-03-06 Read more...

20 years and counting for the GaN LED

A commercially viable GaN LED was an incredibly hard nut to crack that required the development of a buffer layer and a novel approach to p-type doping. But 20 years ago it all came together. Richard Stevenson looks back at the device’s birth. (more…)

2012-03-06 Read more...