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Effect of Heat Treatment on the Performance of Silicon Single Crystals

PAM-XIAMEN is able to offer you high-performance silicon wafers, additional wafer information you can find in https://www.powerwaywafer.com/silicon-wafer. Heat treatment refers to the heat treatment of silicon single crystals (or silicon wafers) for a certain period of time at a certain temperature and protective atmosphere, with the aim of improving their [...]

Reducing Surface Pits of 4H-SiC Epiwafer

PAM-XIAMEN can supply SiC epitaxial wafers, more wafer specifications please read: https://www.powerwaywafer.com/sic-wafer/sic-epitaxy.html. Although SiC epitaxial wafers exhibit excellent characteristics in high-voltage and high current devices, there are still several types of defects that have a negative impact on the electrical performance of SiC devices. Among them, surface pits have an impact [...]

4H-SiC Subsurface Damage

Semiconductor silicon carbide (4H SiC) has excellent properties such as wide bandgap, high breakdown field strength, high electron mobility, high thermal conductivity, and good chemical stability. It has demonstrated important application potential in fields such as power electronics, radio frequency microwave, and quantum information. The 4H-SiC substrate is the [...]

Influence of Seed Crystal on SiC Crystal Growth

PAM-XIAMEN can supply SiC seed crystal for single crystal growth, specific parameters can be found in: https://www.powerwaywafer.com/sic-seed-crystal.html Seed crystals have a significant influence on the initial nucleation of crystals. The surface morphology of the crystal nucleation stage can to some extent reflect the rich information of crystal growth mechanism and crystal defect distribution, and [...]

2022-2028 YOLE Silicon Carbide (SiC) Power Semiconductor Market Report

With the driving force of Automotive and Industrial electronics, the strong growth of the silicon carbide (SiC) power semiconductor market is expected to approach $10 billion in the coming years. At the same time, many industry participants have announced corresponding expansion plans to quickly seize market share. The cooperation and integration [...]

Sc Doping in Aluminum Nitride (AlN)

Aluminum nitride (AlN) is a widely used III-V group nitride with a hexagonal wurtzite structure in the field of acoustic electronic devices. It has a large direct bandgap (bandgap of 6.2 eV), is compatible with CMOS technology, and has high thermal conductivity. In addition, aluminum nitride thin films have [...]

How Defect Density Impacts Mechanics of 4H-SiC Substrate?

PAM-XIAMEN can supply SiC substrates with various specifications, please get more info from: https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html 1. Significance of Research on Correlation Between Defect Rate and Mechanical Strength It is well known that SiC defects have great negative impact to the electrical reliability and performance of chips; Their impact on the mechanical yield [...]

How Impurities & Temperature Reshape Resistivity of Silicon Crystal?

Silicon wafers can be supplied with specifications as found in: https://www.powerwaywafer.com/silicon-wafer Silicon is a semiconductor material, and its resistivity is closely related to the doping concentration. Doping is that introducing a small amount of impurities into silicon crystals to alter their electrical properties. According to the requirements of conductivity type and [...]

Minority Carrier Lifetime for High-Performance 4H-SiC Epi Wafers

The minority carrier lifetime, also known as the average lifetime of non-equilibrium minority carriers, reflects the decay rate of minority carriers in semiconductor materials. It can directly reflect the quality of semiconductor materials and the performance of high-voltage high-power devices. Take the SiC bipolar power devices (eg. IGBT, PIN diode) [...]

AlN Single Crystal Growth: The Role of Habits

PAM-XIAMEN can supply single crystal AlN substrate, additional sepcifications please see: https://www.powerwaywafer.com/aln-substrate.html. The AlN (aluminum nitride) crystal structure has hexagonal wurtzite (α- Phase) and cubic sphalerite (β- phase), and the hexagonal wurtzite structure is a stable structure, as shown in Fig. 1. AlN belongs to direct bandgap electronic semiconductors with a bandgap [...]