2″ FZ 진성 Si 웨이퍼 DSP

2″ FZ 진성 Si 웨이퍼 DSP

관련 게시물

Zero Diffraction Plate-1

PAM XIAMEN offers Zero Diffraction Plate. Si Single Crystal Zero Diffraction Plate for XRD Desktop X-Ray Orientation Machine for Single Crystal Orientation Measurement Zero Diffraction Plate for XRD: 17.8 Dia x1.0 t mm with Cavity 10 IDx0.1 mm, Si Crystal Zero Diffraction Plate for [...]

2019-05-22메타 저자
4″ CZ Prime Silicon Wafer Thickness 525 ± 25 µm

PAM XIAMEN offers 4″ CZ Prime Silicon Wafer Thickness 525 ± 25 µm. 4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 525 ± 25 µm, orientation (100)(+/-0.5°), 2-side polished, p or n type (no matter) , ? Ohm cm (no matter), [...]

2019-06-28메타 저자
CZT Pixilated Detector

In contrast to indirect semiconductor detectors, CZT provides ‘direct’ solid-state technology. The CZT semiconductor is a pixilated array with an effective Z of 50 and a density of 5.8 g/cm3. Gamma rays enter the CZT semiconductor detector and are directly converted to electron hole [...]

2019-03-11메타 저자
4″ Silicon Wafer-7

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 4″ 480 C/C 1-30 SEMI Test, UNPOLISHED WAFERS WITH EDGE CHIPS p-type Si:B [100] 4″ 500 P/P 1-50 SEMI Prime, Carbon content (0.2-0.9)E16/cc per ASTM F1319, Oxygen content (9.4-8.8)E17/cc p-type Si:B [100] 4″ 500 P/P 1-50 SEMI Prime, Carbon content ~1.0ppma p-type Si:B [100] 4″ 500 P/P 1-50 SEMI Prime, Carbon content ~0.2ppma p-type Si:B [100] 4″ 500 P/P 1-50 SEMI Prime, Carbon content (1.3-2.2)E16/cc per ASTM F1319, Oxygen content (7.9-7.7)E17/cc p-type Si:B [100] 4″ 500 P/P 1-50 SEMI [...]

2019-03-05메타 저자
MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate Layer

This letter describes the heteroepitaxy of InP on Si by MOCVD. A new epitaxial structure with a thin GaAs intermediate layer (InP/GaAs/Si) is proposed to alleviate the large lattice mismatch (8.4%) between InP and Si. Using this structure, a 4-inch InP single crystal with [...]

2019-08-19메타 저자
4″ Silicon Ignot

PAM XIAMEN offers 4″ silicon ignot. Silicon ingot, per SEMI, G 100.7±0.3mmØ, p-type Si:B[100]±2.0°, Ro=(0.001-0.003)Ohmcm, Ground Ingot, NO Flats, NOTE: visual rings of dopant on front and back side ARE NOT allowed For more information, please visit our website: https://www.powerwaywafer.com, send us email at [...]

2019-07-02메타 저자