2″ FZ Intrinsic Si Wafer DSP
2″ FZ (100) intrinsic, DSP
wafer Si FZ (100)
dia 2’’ x 280µm
intrinsic
R > 20,000 ohm.cm
2 sides polished with SEMI Std flats
Roughness<0.5nm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
HgCdTe thin films have been deposited on CdZnTe/Si(1 1 1) substrates by pulsed laser deposition (PLD). A Nd:YAG pulsed laser with a wavelength of 1064 nm was used as laser source. The effects of CdZnTe buffer layer thickness which varied with the deposition time in the range from [...]
PAM-XIAMEN offers 1550nm laser diode wafer, which is an epitaxial wafer of a diode laser structure emitting around 1550 nm (on InP substrate), and the wafer dimension for laser diode 1550nm can be 2” or 3”. You can fabricate a laser for your application such [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 40mm 250 P/E 1-100 SEMI Prime, Soft cst p-type Si:B [100] 2″ 280 P/P 1-5 SEMI Prime, p-type Si:B [100] 2″ 280 P/P 1-5 SEMI Prime, p-type Si:Ga [100] 2″ 350 P/P 1-5 SEMI Prime, p-type Si:B [100] 2″ 525 P/P 1-30 SEMI, p-type Si:B [100] 2″ 1000 P/P 1-10 SEMI Prime p-type Si:B [100] 2″ 1000 P/E 1-10 SEMI Prime p-type Si:B [100] 2″ 275 P/E 0.5-1.0 SEMI p-type Si:B [100] 2″ 3150 C/C >0.5 1Flat p-type Si:B [100] 2″ 280 P/P 0.4-0.6 SEMI Prime, p-type Si:B [100] 2″ 275 P/E 0.2-0.4 SEMI Prime, p-type Si:B [100] 2″ 279 P/P 0.08-0.12 SEMI Prime p-type Si:B [100] 2″ 300 P/E 0.016-0.017 Prime, NO Flats p-type Si:B [100] 2″ 300 P/E 0.016-0.017 Prime, NO Flats p-type Si:B [100] 2″ 250 P/P 0.015-0.020 SEMI Prime p-type Si:B [100] 2″ 250 P/P 0.015-0.020 SEMI Prime p-type Si:B [100] 2″ 250 P/P 0.015-0.020 SEMI Prime p-type Si:B [100] 2″ 280 P/P 0.015-0.020 Prime, NO Flats p-type Si:B [100] 2″ 280 P/P 0.015-0.020 Prime, NO Flats p-type Si:B [100] 2″ 3000 P/E 0.015-0.020 Groups of [...]
PAM XIAMEN offers Cr – Foil and Substrate. Cr Metallic Substrate ( polycrystalline): 10×10 x 1.0 mm, 1 side polished-1 Polycrystal Cr ( Chromium ) metallic substrate Purity: > 99.99% Substrate dimension: 10×10 x 1.0 mm, Surface finish: one side polished Colbat Properties Name: [...]
PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates! Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 6 DSP Phosphorus N 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.25 ° 1.5 ± 0.5 Ohmcm 150 ± 0.5 mm 280 ± 2.5 µm 30 1,25 30 6 DSP Phosphorus N 100 57,5 ± 2,5 110 ± 0,20 0.0 ± 0.5° 1-4 Ohmcm 150 [...]
PAM-XIAMEN, one of leading gallium arsenide wafer manufacturers, can offer Gallium Arsenide(GaAs) wafer with high mobility. Normally mobility of n type/Si doped GaAs is above 1000cm2/V.s, mobility of p type/Zn doped GaAs is above 50~120cm2/V.s,and mobility of undoped GaAs is require to above 3500cm2/V.s, [...]
