2″ FZ Intrinsic Si Wafer DSP
2″ FZ (100) intrinsic, DSP
wafer Si FZ (100)
dia 2’’ x 280µm
intrinsic
R > 20,000 ohm.cm
2 sides polished with SEMI Std flats
Roughness<0.5nm
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 5″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 5″ 635 ±15 E/E FZ >5,000 p-type Si:B [100] 5″ 889 ±13 P/E FZ >1,000 Prime p-type Si:B [100] 5″ 920 ±10 E/E FZ >1,000 p-type Si:B [100] 5″ 920 ±10 E/E FZ >1,000 Warp measured <8μm n-type Si:P [100] 5″ 400 P/E FZ 7,000-14,300 SEMI Prime, Bow/Warp<20μm n-type Si:P [100] 5″ 400 P/E FZ 7,000-14,300 SEMI Prime, Bow/Warp<20μm n-type Si:P [100] 5″ 350 P/E FZ 5,000-10,000 SEMI Prime, Bow/Warp<20μm n-type Si:P [100] 5″ 350 P/E FZ 5,000-10,000 SEMI Prime, Bow/Warp<20μm, in Empak cassettes of 5 wafers n-type Si:P [111] ±0.1° 5″ 200 ±15 BROKEN FZ >3,000 Broken L/L wafers, in 2 pieces n-type Si:P [111] 5″ 300 ±15 P/E FZ 1,000-3,000 SEMI Prime, in [...]
Near-band-edge luminescence in heavily doped gallium arsenide The near-band-edge photoluminescence at 80K of heavily tellurium-doped degenerate liquid-phase-epitaxial gallium arsenide layers (n=2*1018 cm-3) is investigated. The layers are compensated with shallow germanium acceptors (the values of the degree of compensation are K=0.05-0.7) during the epitaxial growth process. [...]
PAM XIAMEN offers 5x5mm & 10x10mm single crystal. 5x5mm & 10x10mm Ge square substrates (100) Ge (100) square substrate,N-type undoped Ge Substrate (100) 5x 5×0.5 mm, 1 SP, Undoped ,N-type.R>50 ohm.cm Ge Substrate (100) 5x 5×0.5 mm, 2SP, Undoped Ge Substrate (100) 10x10x 0.35 [...]
PAM-XIAMEN can offer 780nm laser diode wafer with quantum well based on GaAs substrate. The semiconductor lasers fabricated our LD wafer are applied in the fields of military, laser cutting, laser coating, laser medical treatment, optical communication, infrared security and etc., which have the [...]
PAM-XIAMEN offers (10-11) Plane U-GaN Freestanding GaN Substrate Item PAM-FS-GAN(10-11)-U Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (10-11) plane off angle toward A-axis 0 ±0.5° (10-11) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type / Undoped Resistivity (300K) < 0.1 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at [email protected] and [email protected]
PAM XIAMEN offers PbSe single crystal substrate. Lead selenide (PbSe), or lead(II) selenide, a selenide of lead, is a semiconductor material. It forms cubic crystals of the NaCl structure; it has a direct bandgap of 0.27 eV at room temperature. (Note that incorrectly identifies [...]
