2″ FZ Intrinsic Si Wafer DSP
2″ FZ (100) intrinsic, DSP
wafer Si FZ (100)
dia 2’’ x 280µm
intrinsic
R > 20,000 ohm.cm
2 sides polished with SEMI Std flats
Roughness<0.5nm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM-XIAMEN can offer 6H SiC wafer with n type or semi-insulating. Silicon carbide wafer is a material presenting different crystalline structures called polytypes, which has more than 250 structures. Different polytypes has different atomic stacking sequences. Polytypes generate the cubic, hexagonal or rhombohedral structures, which include [...]
Bulk GaN Crystal Grown by HVPE We succeeded in preparing very thick c-plane bulk gallium nitride (GaN) crystals grown by hydride vapor phase epitaxy. Growth of the bulk GaN crystals was performed on templates with 3 μm GaN layer grown by metal organic chemical vapor [...]
Some news indicates that a high-tech company in a certain country has developed a new type of substrate material that matches the GaN lattice and can grow GaN well. (Note: It is very difficult to prepare GaN bulk single crystals, so the GaN mentioned [...]
PAM XIAMEN offers 4″CZ Prime Silicon Wafer-7 GG27b Silicon wafers, per SEMI Prime, P/E 4″Ø×500±25μm, FZ Intrinsic undoped Si:-[100]±0.5°, Ro=(5,000-10,000)Ohmcm, One-side-polished, back-side Alkaline etched, SEMI Flat (one), Sealed in Empak or equivalent cassette, MCC Lifetime>1,000μs. For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
GaN epitaxy template on Sapphire substrate with N-type, P-type or semi-insulating is available for the preparation of semiconductor optoelectronic devices and electronic devices. GaN epitaxial layer on sapphire substrate refers to a composite structure composed of a gallium nitride single crystal thin film material [...]
Growth of 3C–SiC films on Si substrates by vapor–liquid–solid tri-phase epitaxy Cubic SiC films (3C–SiC) were deposited on (111) Si substrates by a vapor–liquid–solid tri-phase growth method. In such a process a thin copper layer, which was evaporated on the Si substrate prior to the [...]
