2″ FZ Intrinsic Si Wafer DSP
2″ FZ (100) intrinsic, DSP
wafer Si FZ (100)
dia 2’’ x 280µm
intrinsic
R > 20,000 ohm.cm
2 sides polished with SEMI Std flats
Roughness<0.5nm
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers4″ Silicon EPI Wafer-6 4″ Si epi wafer Structure： (Top layer intrinsic Si / Middle layer Phosphorus Doped / Ion Implantation / Si substrate) Top layer intrinsic Si: Resistivity≥50Ωcm, Thickness 5μm, Residual carrier concentration<1×1014/cm3 Middle layer Phosphorus Doped： Resistivity around 0.025Ωcm (Phosphorous concentration 7×017/cm3), Thickness 20μm, Residual carrier concentration<2.1×1013/cm3 Layer with Ion Implantation: handled [...]
PAM XIAMEN offers 4″CZ Prime Silicon wafer-16 4″ CZ Silicon Wafer SSP Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm, SEMI Flats (two), p-type Si:B[100]±0.5°, Ro=(0.001-0.002)Ohmcm, One-side-polished, back-side Alkaline etched, TTV<5μm, Bow/Warp<30μm, Wafers free of striation marks, Sealed in Empak or equivalent cassette. For more information, send us email at [email protected] and [email protected]
PAM-02A is an amplifier which used for shaping and amplifying signals comes from scintillation detector, proportional counter and semiconductor detector. PAM-02A integrates amplifier circuit and SK shaping circuit. With ordered cable, it can direct pulse signal which comes from amplifier into multi-channel pulse analyzer. 1. [...]
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InP substrate and other related products and services, can offer InP substrate for Fiber optics network components. Our monocrystalline InP crystal substrate has excellent properties, a series of doping experiments have determined the effective segregation coefficient [...]
PAM-XIAMEN has 4H SiC crystal for sale, which is for power electronic device and microwave power device. It has been found that there are over 250 polytypes of silicon carbide single crystal, but the most common polytypes are cubic close-packed 3C-SiC and hexagonal close-packed [...]
Phonon Properties of SiC Wafer Nanyang Technological University use our SiC wafer to research Phonon Properties. They research focused on the phonon properties of crystal. Different crystal structures have slight different phonon For more details, please refer to below publications: https://www.nature.com/articles/s41467-018-04168-x https://www.nature.com/articles/s41467-020-15767-y Resonant nanostructures for highly confined and ultra-sensitive [...]
