PAM XIAMEN offers 6″ FZ Silicon Wafer
Silicon wafers, per SEMI Prime, P/E 6″Ø×875±25µm,
FZ p-type Si:B[111]±0.5°, Ro > 10,000 Ohmcm,
Warp<60μm,
One-side-polished, Particles: ≤10@≥0.3μm,
MCL (Na, Al, K, Fe, Ni, Cu, Zn)<5E10/cm²,back-side etched,
Tarnish, orange peel, contamination, haze,
micro scratch, chips, edge chips, crack,
crow feet, pin hole, pits, dent, waviness,
smudge&scar on [...]
2019-09-03meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
2″
200
P/P
FZ 500-1,000
SEMI, , in hard ccassettes of 4, 5 & 5 wafers
n-type Si:P
[100]
2″
500
P/P
FZ >200
SEMI Prime,
n-type Si:P
[100]
2″
225
P/P
FZ >100
SEMI, , Individual cst, 1 very deep scratch
n-type Si:P
[100]
2″
280
P/E
FZ 60-90
SEMI Prime
n-type Si:P
[100]
2″
150
P/P
FZ 50-110
SEMI Prime,
n-type Si:P
[100]
2″
280
P/P
FZ 2-5
SEMI Prime
n-type Si:P
[111-3.5° towards[110]] ±0.5°
2″
279 ±15
P/E
FZ >2,000
SEMI Prime
n-type Si:P
[111] ±0.5°
2″
280
P/P
FZ 2,000-4,000
SEMI Prime, TTV<5μm, Both-sides Epi-Ready
n-type Si:P
[111] ±0.5°
2″
280
P/P
FZ 2,000-4,000
SEMI Prime, TTV<5μm
n-type [...]
2019-03-07meta-author
GLOBAL DEAL TO SLASH TECH TARIFFS GOES INTO FORCE, BUT WITH A HITCH
After more than four years of often turbulent negotiations to expand the Information Technology Agreement (ITA), tariffs on roughly $1.3 trillion in trade in tech products finally start marching to zero today. [...]
2016-07-29meta-author
HEMTs evolved from Field Effect Transistors (FETs) are suitable for manufacturing monolithic microwave integrated circuits (MMICs).
HEMTs were initially generated to obtain high electron mobility in semiconductor devices at room temperature. The electron mobility of FETs is limited even with high doping levels, so high [...]
2022-07-25meta-author
We report new and exciting experimental results on ion-induced nanopatterning of a-Si and a-Ge surfaces. The crystalline Si (100) and Ge (100) wafers were amorphized and an a/c interface was developed by pre-irradiation with a 50 keV Ar+ beam at normal incidence with an [...]
2019-07-08meta-author
SiC epitaxial wafer is available for fabricating MOSFET devices, wafer specifications can be found in https://www.powerwaywafer.com/sic-mosfet-structure.html
1. Epitaxial Pits
Epitaxial pits, as one of the most common surface morphology defects, have a typical surface morphology and structural profile as shown in Fig.1. The position of thread [...]
2024-03-21meta-author