Suppression Of Gate Leakage Current In GaN MOS Devices By Passivation With Photo-grown Ga2O3 We report the use of photo-enhanced chemical (PEC) technique to form high-quality metal oxide semiconductor (MOS) devices made of gallium oxide (Ga2O3)/gallium nitride (GaN). Gate leakage current density as low as [...]
2012-12-07메타 작성자
PAM-XIAMEN can offer InAlN HEMT( Indium Aluminium Nitride High Electron Mobility Transistor) structure on 8-inch silicon. InAlN band gap is a direct band gap, and InAlN HEMT is used in producing electronic and photonic devices. It is one of the III-V group of semiconductors. As an alloy of indium nitride [...]
2021-04-16메타 작성자
PAM-XIAMEN, a epi service supplier, offers service for processing laser wafer epitaxial growth on polished GaAs substrate and epi on bare substrates for power devices. In the PAM-XIAMEN’s wafer epitaxy foundry, GaAs epitaxy wafer with quantum well laser structure can be processed with the [...]
2018-04-08메타 작성자
PAM-XIAMEN offers M Plane U-GaN Freestanding GaN Substrate Item PAM-FS-GAN M-U Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation M plane (1-100) off angle toward A-axis 0 ±0.5° M plane (1-100) off angle toward C-axis -1 ±0.2° Conduction Type N-type / Undoped Resistivity (300K) < 0.1 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-17메타 작성자
PAM XIAMEN offers Niobium( Nb) substrate ( Polycrystalline). Niobium( Nb) substrate ( Polycrystalline) , 10x10x0.5 mm, 1 side polished Niobium( Nb) substrate ( Polycrystalline) Purity: 99.5% Size: 10x10x0.5 mm Surface finish: One side optical polished Surface finish (RMS or Ra) : N/A General Properties [...]
2019-05-08메타 작성자
Al2O3 (Sapphire) PAM XIAMEN offers high-quality Al2O3 (Sapphire) with C-Plane (0001) orientation at different size from 5 x 5mm2 to 4”diameter: 1 square Al2O3 substrate 5x5mm,10x10mm&0.25″x0.25″ Al2O3 Sapphire Wafer, C-plane (0001), 5x5x0.5mm, 1sp – ALC=> PAM Al2O3 Sapphire Wafer, C-plane (0001), 5x5x0.5mm, 2sp – ALC=> PAM Al2O3- Sapphire Wafer, [...]
2019-04-16메타 작성자
