PAM XIAMEN は単結晶、ウェーハ、結晶基板を提供しています。 PAM XIAMEN は、LED、強誘電体、圧電、電気光学、フォトニクス、高出力エレクトロニクス、高周波パワーデバイスなどの幅広い用途向けに、標準およびカスタマイズされた高品質の単結晶、ウェーハ、基板を提供しています。 ..]
2019-03-12メタ著者
The silicon carbide applications are covering a wide range, and the most popular one is the inverter for electric vehicles. What is an inverter? The inverter is an device, which changes the direct current into the alternating current.
1. An Indispensable Inverter Fabricated on Silicon Carbide Substrate for [...]
2021-04-12メタ著者
PAM XIAMEN offers 4″Silicon Ignot.
Silicon ingot, per SEMI, G 4″Ø (Diameter 100.5±0.3mm),
FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 20,000 Ohmcm,
Ground Ingot, NO Flats. Lifetime>1,000us,
Ox/Carbon <1E16/cc.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found [...]
2019-07-05メタ著者
Single electron transistor (SET) is an important discovery in microelectronics science. Due to the ability to control the tunneling process of a single electron in a micro tunnel junction system, multiple functional devices can be designed using it. In modern submicron devices, the limiting factor [...]
2024-01-25メタ著者
PAM XIAMEN offers 2″CZ Prime Silicon Wafer-4
Silicon wafer
Dia: 2”diameter
thickness: 280±25mm
Type: P-type (100)
Polished: one side polished
Resistivity1-10Ωcm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-16メタ著者
PAM XIAMEN offers Nd2Ga5O12 single crystal.
PAM XIAMEN is developing a series of doped GGG single crystal for nest generation Magneto-optical device.
Composition
(Cubic)
GGG
Gd3Ga5O12
YSGG
Y3Sc2Ga3O5
S-GGG（CaMgZr：GGG）
Gd2.6Ca0.4Ga4.1Mg0.25Zr0.65O12
NGG
Nd3Ga5O12
GYSGG
Gd0.63Y2.37Sc2Ga3O12
GSGG
Gd3Sc2Ga3O12
Lattice constant
12.376 Å
12.426 Å ,
12.480 Å
12.505Å
12.507 Å ,
12.554 Å ,
Diffraction（2θ）
51º7′
50º44′
50º43′
50º41′
50º40′
50º22′
Melting Point
~1800 oC
~1877℃
~1730 oC
~1550 [...]
2019-05-14メタ著者
