Thermodynamics and kinetic theory of nucleation and the evolution of liquid precipitates in gallium arsenide wafer We study nucleation and evolution of liquid droplets in semi-insulating solid gallium arsenide (GaAs). For a realistic modelling, the crucial issue of a combined thermodynamic and kinetic treatment is [...]
FZ grown high-resistance silicon wafer is offered by PAM-XIAMEN for the fabrication of MEMS (Micro-electro Mechanical System). Silicon wafer is the common material for manufacturing integrated circuits in consumer electronics. Due to the availability and competitive price with high quality of silicon material, it [...]
2021-11-03메타 작성자
PAM XIAMEN offers6″ CZ Prime Wafer 1 6 inch Prime CZ-Si wafer 6 inch (+/- 0.5 mm), thickness = 200 ± 25 µm, orientation (100)(+/-0.5°), 2-side polished, p or n type (no matter) , ? Ohm cm (no matter), Particle: 0.5μm, <qty300 ttv ≤ 10um，warp ≤30um One side sputtering Cr/Au Layer with [...]
2019-09-20메타 작성자
InGaAs Structure Wafer Indium gallium arsenide (InGaAs), also called gallium indium arsenide, is a common name for a family of chemical compounds of three chemical elements, indium, gallium, and arsenic. Indium and gallium are both boron group elements, often called “group III”, while arsenic is a pnictogen or [...]
We provide thermal oxide wafer with/without Ti layer/Pt layer in diameter from 2″ to 6″,now we give examples as follows: 1) 4 inch,silicon prime/test wafer,deposited with 5000 Angstroms of silicon oxide 2) Pt layer+Ti layer+thermal oxide layer deposit on silicon wafer: 4 inch Prime grade silicon,1-20 ohm [...]
AlN thin film, as a piezoelectric material with a wurtzite structure, has attracted much attention due to its excellent performance. However, compared with other piezoelectric materials such as Pb (ZrxTi1-x) O3 (lead zirconate titanate, PZT), pure AlN thin films exhibit poorer piezoelectric response. Doping [...]
2024-04-24메타 작성자
