PAM XIAMEN offers Single Crystal Quartz Wafers.
All single crystal quartz should be grown from one special seed.
And the different cut type will cause the different seed location.
One type is inside the wafer names “with seed”, the other type is not inside the wafers, so [...]
2019-02-27메타 저자
PAM XIAMEN offers 4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm.
PRIME WAFERS SILICIUM CZ
DIAMETER 4 inch (100mm+/-0.5mm)
ORIENTATION <1-0-0> +/-1°
THICKNESS : 525µm +/-25µm
SSP
TTV < 10µm – BOW < 40µm
FLAT : 32.5mm
TYPE P
RESISTIVITY : 8 – [...]
2019-07-05메타 저자
The quasi-steady state photo conductance technique is employed to probe effective minority carrier lifetime (τ eff) modifications after integrating silver nanoparticles (Ag NPs) on n-type and p-type silicon wafers with a native oxide surface. Our observations reveal that τ eff modification is very sensitive [...]
2018-11-21메타 저자
PAM XIAMEN offers SiO2 Silica Quartz Single Crystal.
Major capability parameter
Growth method
hydro-thermal method
Crystal Structure
M6
Unit cell constant
a=4.914Å c=5.405 Å
Melt point（℃）
1610℃
Density
2.684g/cm3
Hardness
7（mohs）
Thermal conductivity
0.0033cal/cm℃
Planned constant
1200uv/℃（300℃）
Index of refraction
1.544
Thermal expansion
α11：13.71×106 / ℃ α33：7.48×106 /℃
Frequency constant
1661（kHz/mm）
Crystal orientation
Y、X or Z，30º~42.75 º ±5
Polishing
Single or double Ra<10Å
Thickness
0.5mm±0.05mm TTV<5um
Diameter
Φ2″(50.8mm)、Φ3″(76.2mm)、Φ4″(100mm)±0.2mm
main positioning：22±1.5mm (Φ3″) 32±3.0 (Φ4″)
Secondary positioning ：10mm±1.5mm
For more information, please [...]
2019-03-15메타 저자
PAM-XIAMEN provides indium arsenide (InAs) ingot with high quality and competitive price. Indium arsenide is a group III-V compound semiconductor material composed of indium and arsenic. It is a silver-gray solid at room temperature, and the indium arsenide crystal structure is a zinc blende crystal [...]
2021-06-23메타 저자
Silicon carbide has very stable characteristics, so that it can work stably in some harsh environments. Because of the stable chemical bonds, the technical threshold for silicon carbide production is very high. The growth conditions of silicon carbide crystal ingots are harsh, requiring high temperature (~2600℃) and high [...]
2021-04-23메타 저자
