Highlights
•MOCVD growth of a p-GaN/i-InGaN/n-GaN (PIN) solar cell on ZnO/Sapphire templates.
•In-depth structural characterizations showing no back-etching of ZnO.
•Chemical lift-off and wafer-bonding of the structure on float glass.
•Structural characterizations of the device on glass.
Abstract
p-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal [...]
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
6
DSP
Phosphorus
N
100
57,5 ± 2,5
110 ± 0,50
0.0 ± 0.25 °
1.5 ± 0.5 Ohmcm
150 ± 0.5 mm
280 ± 2.5 µm
30
1,25
30
6
DSP
Phosphorus
N
100
57,5 ± 2,5
110 ± 0,20
0.0 ± 0.5°
1-4 Ohmcm
150 [...]
2019-02-25메타 저자
Custom Silicon Wafers
PAM XIAMEN offers custom silicon Wafers from thinning or reclaiming substrates that you already have to making silicon cubes.
We can laser cut or dice wafers into diameters and dimensions that you need.
Below is just some of the custom silicon wafer services that [...]
2019-02-13메타 저자
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:Incipient plasticity in 4H-SiC during quasistatic nanoindentation
Published by:
Saurav Goel ;Jiwang Yan ;Xichun Luo ;Anupam Agrawald
a School of Mechanical and Aerospace [...]
2019-12-09메타 저자
PAM XIAMEN offers 4″CZ Epitaxial Prime Silicon Wafer.
4″ Si epi wafer
Growth Method: CZ
100 +/- 0.5 mm diameter silicon
Orientation <111> 4deg off
P Type Boron doped 0.002 – 0.003 ohm cm
Front side polished – Epi ready
thickness 525 +/-25 um [...]
2019-07-05메타 저자
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InP substrate and other related products and services, can offer InP substrate for Fiber optics network components. Our monocrystalline InP crystal substrate has excellent properties, a series of doping experiments have determined the effective segregation coefficient [...]
2017-08-18메타 저자
