AlxIn1-xP is a ternary semiconductor material grown with X composition in the range of 0.5~0.52, which is lattice matched to GaAs. AlxIn1-xP is commonly used as a window layer in high-bandgap III-V solar cells, where it is responsible for reducing surface recombination by reflecting [...]
PAM XIAMEN offers Soda Lime Glass Window.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Applications where too much heat build up is a problem Hot mirrors to reflect Infrared and Transmitting Visible Light Cold mirrors for trasmitting Infrared (IR) and [...]
2019-02-27メタ著者
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaN on Sapphire substrate and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, [...]
2017-12-28メタ著者
InGaP / GaAs heterojunction bipolar transistor (HBT) has become one of the highly competitive and promising high-speed solid-state devices in the current microwave and millimeter wave field due to its high reliability, low cost, and relatively mature technology. PAM-XIAMEN provide InGaP / GaAs HBT wafers. [...]
2023-07-03メタ著者
As one of 5G semiconductor manufacturers, Xiamen Powerway Advanced Material Co., Ltd. can offer compound semiconductor materials with unique advantages in the physical properties, and the 5g compound semiconductor market of PAM-XIAMEN is enlarging. The semiconductor materials have experienced three stages of development:
the first stage is group [...]
2021-05-06メタ著者
M-Plane GaN Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy
M-plane GaN epilayers have been directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy using a low temperature GaN nucleation layer. The m-plane GaN surface is optically smooth and mirror-like, with rms [...]
2013-04-12メタ著者
