CZ単結晶シリコン
PAM-XIAMEN, a monocrystalline bulk silicon producer, can offer <100>, <110> and <111> monocrystalline silicon wafers with N&P dopant in 76.2~200 mm, which are grown by CZ method. The Czochralski method is a crystal growth method, referred to as the CZ method. It is integrated in a straight-tube heat system, heated by graphite resistance, melts the polysilicon contained in a high-purity quartz crucible, and then inserts the seed crystal into the surface of the melt for welding. After that, the rotating seed crystal is lowered and melted. The body is infiltrated and touched, gradually raised, and finished or pulled through the steps of necking, necking, shouldering, equal diameter control, and finishing.
- 説明
製品の説明
PAM-XIAMEN, a monocrystalline bulk silicon producer, can offer <100>, <110> and <111> monocrystalline silicon wafers with N&P dopant in 76.2~200 mm, which are grown by CZ method. The Czochralski method is a crystal growth method, referred to as the CZ method. It is integrated in a straight-tube heat system, heated by graphite resistance, melts the polysilicon contained in a high-purity quartz crucible, and then inserts the seed crystal into the surface of the melt for welding. After that, the rotating seed crystal is lowered and melted. The body is infiltrated and touched, gradually raised, and finished or pulled through the steps of necking, necking, shouldering, equal diameter control, and finishing.
1. Specifications for CZ Monocrystalline Silicon Wafers
| タイプ | 伝導型 | 方向付け | 直径（mm） | 導電率（Ω。•CM） |
| CZ | N＆P | <100>、<110>および<111> | 76.2-200 | 1-300 |
| MCZ | N＆P | <100>、<110>および<111> | 76.2-200 | 1-300 |
| ヘビードーピング | N＆P | <100>、<110>および<111> | 76.2-200 | 0.001-1 |
| 直径（mm） | 厚さ（UM） | |
| ウエハ | 76.2-200 | ≥160 |
2. Classification of CZ Monocrystalline Silicon Wafer
2.1 CZ-シリコン
重く/低濃度CZ単結晶シリコン is suitable for fabrication of various integrated circuits (IC), diodes, triodes, green-energy solar panel. During the monocrystalline silicon production, the special elements (such as Ga, Ge) can be added to produce the high-efficiency, radiation-resistant and anti-degenerating solar cell materials for special components.
CZ高濃度にドープされた結晶
Adopting the special doping device and CZ monocrystalline silicon wafer technology, the heavily-doped (P, Sb, As) CZ monocrystalline silicon thin film with very low resistivity can be produced, is mainly used as the lining material for epitaxial wafers, and is used to produce the special electronic devices for LSI switch power supplies, Schottky diodes and field-control high-frequency power electronic devices.
<110> Special orientation CZ-silicon
ザ・<110>単結晶シリコン has the original orientation <110>, the further processing for orientation adjustment is unnecessary; the <110>monocrystalline silicon crystal structure has the perfect characteristics, and low oxygen & carbon contents, is a new solar cell material and can be used the new generation cell material.
2.2 MCZ-Monocrystalline Silicon
The magnetic-field is used in the czochralski process to produce the CZ mono-crystalline silicon wafers with the characteristics of low oxygen content and high resistivity uniformity; the MCZシリコン各種IC、ディスクリートデバイス及び低酸素太陽電池用シリコン材料を製造するのに適しています。
一目で私たちの利点
1.Advancedエピタキシャル成長装置および試験装置。
低欠陥密度と良好な表面粗さを持つ最高品質2.Offer。
当社の顧客のための研究チームのサポートと技術サポートを3.Strong
4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-1
4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-2
4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-3
4″ CZ Prime Silicon Wafer Thickness 525 ± 25 µm
4″ CZ Prime Silicon Wafer Thickness 525±25µm
4″ CZ Prime Silicon Wafer Thickness 525 ± 25 µm-2
4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm-3
4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm-4
4″ CZ Prime Silicon Wafer Thickness 1500±25μm
4″ CZ Prime Silicon Wafer Thickness 200um.
12インチシリコンウェーハ 300mm TOX (Si熱酸化ウェーハ)
4″ CZ Epitaxial Prime Silicon Wafer-3
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エッチングウェハ
The etching silicon wafers offered by PAM-XIAMEN are N type or P type etching wafers, which have low roughness, low reflectivity and high reflectivity. The etching wafer has the characteristics of low roughness, good glossiness and relatively low cost, and directly substitutes the polished wafer or epitaxial wafer which has relatively high cost to produce the electronic elements in some fields, reducing the costs.
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フロートゾーン単結晶シリコン
PAM-XIAMENでは、フロートゾーン法により得られるフロートゾーンシリコンウェーハを提供できます。 単結晶シリコンロッドはフロートゾーン成長によって得られ、その後、単結晶シリコンロッドをフロートゾーンシリコンウェーハと呼ばれるシリコンウェーハに加工します。 フローティングゾーンシリコンプロセス中、ゾーンメルトシリコンウェーハは石英るつぼと接触していないため、シリコン材料は浮遊状態にあります。 これにより、シリコンのフローティングゾーン溶解プロセス中の汚染が少なくなります。 炭素含有量と酸素含有量が低く、不純物が少なく、抵抗率が高くなります。 パワーデバイスや特定の高電圧電子デバイスの製造に適しています。
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GaAs（ガリウム砒素）ウエハース
As a leading GaAs substrate supplier, PAM-XIAMEN manufactures Epi-ready GaAs(Gallium Arsenide) Wafer Substrate including semi-conducting n type, semi-conductor C doped and p type with prime grade and dummy grade. The GaAs substrate resistivity depends on dopants, Si doped or Zn doped is (0.001~0.009) ohm.cm, C doped one is >=1E7 ohm.cm. The GaAs wafer crystal orientation should be (100) and (111). For (100) orientation, it can be 2°/6°/15° off. The EPD of GaAs wafer normally is <5000/cm2 for LED or <500/cm2 for LD or microelectronics.
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ポリッシュウェーハ
PAM-XIAMEN can offer polished wafer, n type or p type with orientation at <100>, <110> or <111>. FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)
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エピタキシャルシリコンウェーハ
Silicon Epitaxial Wafer(Epi Wafer) is a layer of epitaxial silicon single crystal deposited onto a single crystal silicon wafer(note: it is available to grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline silicon wafer, but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial silicon layer. It also can be used for thin film transistor.
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テストウェーハモニターウェーハダミーウェハ
PAM-XIAMENはダミーウェーハメーカーとして、生産装置に使用され、生産工程初期の安全性向上や納期確認、工程形状の評価に使用されるシリコンダミーウェーハ/テストウェーハ/モニターウェーハを提供しています。 ダミーシリコンウェーハは実験やテストに使用されることが多いため、そのサイズと厚さが重要な要素となることが多い。 100mm、150mm、200mm、300mmのダミーウエハをご用意しております。
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SiCウェーハ基板
The company has a complete SiC(silicon carbide) wafer substrate production line integrating crystal growth, crystal processing, wafer processing, polishing, cleaning and testing. Nowadays we supply commercial 4H and 6H SiC wafers with semi insulation and conductivity in on-axis or off-axis, available size:5x5mm2,10x10mm2, 2”,3”,4”, 6” and 8″, breaking through key technologies such as defect suppression, seed crystal processing and rapid growth, promoting basic research and development related to silicon carbide epitaxy, devices, etc.
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自立GaN基板
PAM-アモイUHB-LEDおよびLDのためのものである（窒化ガリウム）GaN基板ウエハを、自立するための製造技術を確立しました。 ハイドライド気相エピタキシー（HVPE）技術によって成長させ、我々のGaN基板は、低欠陥密度を有します。
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12インチシリコンウェーハ 300mm TOX (Si熱酸化ウェーハ)
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12インチのテストグレードシリコンウェーハ
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