CZ単結晶シリコン
PAM-XIAMEN, a monocrystalline bulk silicon producer, can offer <100>, <110> and <111> monocrystalline silicon wafers with N&P dopant in 76.2~200 mm, which are grown by CZ method. The Czochralski method is a crystal growth method, referred to as the CZ method. It is integrated in a straight-tube heat system, heated by graphite resistance, melts the polysilicon contained in a high-purity quartz crucible, and then inserts the seed crystal into the surface of the melt for welding. After that, the rotating seed crystal is lowered and melted. The body is infiltrated and touched, gradually raised, and finished or pulled through the steps of necking, necking, shouldering, equal diameter control, and finishing.
- 説明
製品の説明
PAM-XIAMEN, a monocrystalline bulk silicon producer, can offer <100>, <110> and <111> monocrystalline silicon wafers with N&P dopant in 76.2~200 mm, which are grown by CZ method. The Czochralski method is a crystal growth method, referred to as the CZ method. It is integrated in a straight-tube heat system, heated by graphite resistance, melts the polysilicon contained in a high-purity quartz crucible, and then inserts the seed crystal into the surface of the melt for welding. After that, the rotating seed crystal is lowered and melted. The body is infiltrated and touched, gradually raised, and finished or pulled through the steps of necking, necking, shouldering, equal diameter control, and finishing.
1. Specifications for CZ Monocrystalline Silicon Wafers
| タイプ | 伝導型 | 方向付け | 直径（mm） | 導電率（Ω。•CM） |
| CZ | N＆P | <100>、<110>および<111> | 76.2-200 | 1-300 |
| MCZ | N＆P | <100>、<110>および<111> | 76.2-200 | 1-300 |
| ヘビードーピング | N＆P | <100>、<110>および<111> | 76.2-200 | 0.001-1 |
| 直径（mm） | 厚さ（UM） | |
| ウエハ | 76.2-200 | ≥160 |
2. Classification of CZ Monocrystalline Silicon Wafer
2.1 CZ-シリコン
重く/低濃度CZ単結晶シリコン is suitable for fabrication of various integrated circuits (IC), diodes, triodes, green-energy solar panel. During the monocrystalline silicon production, the special elements (such as Ga, Ge) can be added to produce the high-efficiency, radiation-resistant and anti-degenerating solar cell materials for special components.
CZ高濃度にドープされた結晶
Adopting the special doping device and CZ monocrystalline silicon wafer technology, the heavily-doped (P, Sb, As) CZ monocrystalline silicon thin film with very low resistivity can be produced, is mainly used as the lining material for epitaxial wafers, and is used to produce the special electronic devices for LSI switch power supplies, Schottky diodes and field-control high-frequency power electronic devices.
<110> Special orientation CZ-silicon
ザ・<110>単結晶シリコン has the original orientation <110>, the further processing for orientation adjustment is unnecessary; the <110>monocrystalline silicon crystal structure has the perfect characteristics, and low oxygen & carbon contents, is a new solar cell material and can be used the new generation cell material.
2.2 MCZ-Monocrystalline Silicon
The magnetic-field is used in the czochralski process to produce the CZ mono-crystalline silicon wafers with the characteristics of low oxygen content and high resistivity uniformity; the MCZシリコン各種IC、ディスクリートデバイス及び低酸素太陽電池用シリコン材料を製造するのに適しています。
一目で私たちの利点
1.Advancedエピタキシャル成長装置および試験装置。
低欠陥密度と良好な表面粗さを持つ最高品質2.Offer。
当社の顧客のための研究チームのサポートと技術サポートを3.Strong
4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-1
4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-2
4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-3
4″ CZ Prime Silicon Wafer Thickness 525 ± 25 µm
4″ CZ Prime Silicon Wafer Thickness 525±25µm
4″ CZ Prime Silicon Wafer Thickness 525 ± 25 µm-2
4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm-3
4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm-4
4″ CZ Prime Silicon Wafer Thickness 1500±25μm
4″ CZ Prime Silicon Wafer Thickness 200um.
12″ シリコンウェーハ 300mm TOX (Si熱酸化ウェーハ)
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