PAM XIAMEN offers 4″ Silicon Oxide Wafer
4″ Silicon Oxide Wafer
Diameter (mm): 100mm
Grade: Prime
Growth: CZ
Type/Dopant: any
Orientation: 100
Resistivity (Ohm-cm): any
Thickness (µm): 500±25μm
Tolerance (µm): any
Surface Finish: SSP
Flats: SEMI-Std.
TTV < (µm): any
Bow < (µm): any
Warp < (µm): any [...]
2020-04-26メタ著者
PAM XIAMEN offers 2″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
50.8
P
Boron
CZ
-111
.001-.005
300-350
P/E
PRIME
50.8
P
Boron
CZ
-110
1-20
225-275
P/P
PRIME
50.8
P
Boron
CZ
-110
1-20
250-300
P/E
PRIME
50.8
Any
Any
CZ
Any
Any
200-500
P/E
TEST
50.8
Any
Any
CZ
Any
Any
800-1000
P/E
TEST
50.8
Any
Any
CZ
Any
Any
4900-5100
P/E
TEST
50.8
Any
Any
CZ
Any
Any
4900-5100
P/E
TEST
50.8
Any
Any
CZ
Any
Any
4900-5100
P/E
TEST
50.8
Intrinsic
Undoped
FZ
-100
5000-10000
275-325
P/E
PRIME
50.8
SI.
Undoped
VGF
-100
>1E7
325-375
P/E
PRIME
50.8
N
Si
VGF
4E+18
250-300
P/E
EPI
50.8
N
Si
VGF
-100
325-375
P/E
PRIME
50.8
P
Zn
VGF
-100
325-375
P/E
PRIME
50.8
Undoped
CZ
-100
>30
300-350
P/P
EPI
50.8
Undoped
CZ
-100
>30
350-400
P/E
EPI
50.8
N
Sb
CZ
(100)off 6-9 tow
.01-.04
150-200
P/E
EPI
50.8
N
Sb
CZ
-100
.005-.02
300-350
P/P
EPI
50.8
N
Sb
CZ
-100
.005-.02
350-400
P/E
EPI
50.8
P
Ga
CZ
-100
.01-.04
300-350
P/P
EPI
50.8
P
Ga
CZ
-100
.01-.04
350-400
P/E
EPI
50.8
R-Axis
CZ
300-350
P/E
TEST
50.8
N
Si
VGF
-100
275-325
P/E
PRIME
50.8
P
Zn
VGF
-100
275-325
P/E
PRIME
50.8
Si
Fe
VGF
-100
5000000
325-375
P/E
PRIME
50.8
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
50.8
Shipping Cassette
ePak
Holds25Wafers
Clean Room
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN [...]
2019-03-04メタ著者
PAM XIAMEN offers 150mm&200mm Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
150
N
Phos
CZ
-100
1-20
180-200
P/P
PRIME
150
N
Phos
CZ
-100
1-100
500-550
P/P
PRIME
150
N
Phos
CZ
-100
1-100
500-600
P/E
TEST
150
N
Phos
CZ
-100
1-100
650-700
P/E/DTOx
PRIME
150
N
Phos
CZ
-100
1-100
650-700
P/E/Ni
PRIME
150
N
Phos
CZ
-100
1-20
650-700
P/E/OX
PRIME
150
N
Phos
CZ
-100
1-20
650-700
P/E/WTOx
150
P
Boron
CZ
-100
1-20
180-200
P/P
PRIME
150
P
Boron
CZ
-100
1-100
500-550
P/P
PRIME
150
P
Boron
CZ
-100
1-100
500-600
P/E
TEST
150
P
Boron
CZ
-100
.001-.005
650-700
P/E
PRIME
150
P
Boron
CZ
-100
1-100
650-700
P/E/DTOx
PRIME
150
P
Boron
CZ
-100
1-100
650-700
P/E/Ni
PRIME
150
P
Boron
CZ
-100
1-20
650-700
P/E/OX
PRIME
150
P
Boron
CZ
-100
1-20
650-700
P/E/WTOx
150
P
Boron
CZ
-100
1-20
950-1050
P/E
PRIME
150
P
Boron
CZ
-100
1-20
950-1050
P/P
PRIME
150
Undoped
VGF
-100
>1E7
500-600
P/P
150
Undoped
VGF
-100
>1E7
500-600
P/P
150
N
Si
VGF
-100
650-700
P/E
PRIME
150
P
Zn
VGF
-100
650-700
P/E
PRIME
150
Si
Undoped
VGF
-100
>1E7
500-600
P/P
TEST
150
Si
Undoped
VGF
-100
>1E7
500-600
P/P
TEST
150
Si
Undoped
VGF
-100
>1E7
610-660
P/P
EPI
150
Si
Undoped
VGF
-100
>1E7
650-700
P/E
PRIME
150
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
150
Round
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
150
Shipping Cassette
ePak
Holds25Wafers
Clean Room
200
N
Phos
CZ
-100
1-20
700-750
P/E/OX
PRIME
200
P
Boron
CZ
-100
1-100
600-800
P/E
TEST
200
P
Boron
CZ
-100
1-20
700-750
P/E/OX
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in [...]
2019-03-04メタ著者
Growth of InGaN layers on (1 1 1) silicon substrates by reactive sputtering
InGaN films were grown on (1 1 1) silicon substrates by reactive magnetron sputtering. It was demonstrated that the indium composition in the InGaN films can be controlled by varying the ratio of the applied radio-frequency [...]
N-Type Silicon Substrates
PAM XIAMEN offers n-type silicon wafers in stock.
N-type Silicon
50.8mm N-type Arsenic Doped (100) 0.001-0.005 ohm-cm 280um SSP In stock
76.2mm N-type Phosphorous Doped (100) 1-10 ohm-cm 380um SSP In stock
100mm N-type Phosphorus Doped (100) 10-20 ohm-cm 280um DSP In stock
150mm N-type Antimony Doped [...]
2019-02-14メタ著者
PAM XIAMEN は ZnO 酸化亜鉛結晶基板を提供しています。 主なパラメータ 結晶構造 六方晶系 格子パラメータ a=3.252Å c=5.313Å 密度 5.7 g/cm3 硬度 4(モース) 融解 [...]
2019-03-18メタ著者