PAM XIAMEN offers 3″ Prime EPI Wafer.
Details of Prime 3″ Silicon Wafer Specification
CZ SUBSTRATE:
Orientation : 111
OFF orientation : 3° – 4°
Type/Dopant : n/Sb
Resistivity Ω cm : <0.018
Diameter mm : 76.2 +/- 0.5
Flats : SEMI
Flat, location [...]
2019-07-03메타 저자
PAM XIAMEN offers LaF3 crystal.
Structure
Lattice (A)
Melting Point
Density g/cm3
Hardness
Growth
Max. Xtl Size
Trigonal
a=b= 7.190 c=7.367 a=b=90o, g=120o
1493
5.936
4.5
Bridgman
20dx 100mm
LaF3 (100)ori. 9x9x0.5mm 1sp
LaF3 (100)ori. 10x10x0.5mm 1SP
LaF3 (100)ori. 7x7x0.5mm 2sp
LaF3 6.35 mm Dia. x 1.575mm ,fine ground
LaF3 (110)ori. 6 mm Dia. x 0.5mm 1sp
LaF3 (100)ori. 10 mm Dia. [...]
2019-05-07메타 저자
PAM XIAMEN offers 4″ CZ Prime Silicon Wafer Thickness 525±25µm.
Si wafers
Dia 4″ x 525±25µm
Type n or p
PRIME
CZ
(100)
1-20 ohm.cm
SSP
Ra<0.5nm
With marking laser on the back side as
For more information, please visit our website: https://www.powerwaywafer.com,
send us [...]
2019-07-01메타 저자
PAM XIAMEN offers Lead-Tungstate Crystals PbWO4.
PRODUCT DESCRIPTION FOR LEAD-TUNGSTATE CRYSTALS
Lead Tungstate (PbWO4) crystal is a scintillator which has been used as the detect material by several high energy physics devices, e.g., CMS detector in CERN. The crystal is distinguished by its fast decay time, high density [...]
2019-03-14메타 저자
PAM XIAMEN은 6″FZ 프라임 실리콘 웨이퍼-2 6″ Si 웨이퍼, 직경 150mm, FZ 가스 도프, DSP, N(111), 저항률 5000-10,000Ωcm을 제공합니다. 매개변수 사양 일반 특성 1 성장 방법 FZ 가스 도프 2 결정 방향(111) ) 3 전도도 유형 n 4 도펀트 인. 5 공칭 가장자리 제외 6mm 전기 특성 6 저항률 5000 – 10,000 Wcm 7 수명 >1500 µsec 화학적 특성 8 산소 농도 < 2xE16 at/cm3 9 탄소 농도 < 2xE16 at/cm3 웨이퍼 준비 특성 10 전면 표면 상태 광택 처리, DSP 11 엣지 [...]
2020-04-17메타 저자
The demand of photodetectors fabricated on InGaAs/InP PIN wafer operating at around 1300nm~1550nm has increased significantly. So that is great news for semiconductor wafer foundries, like PAM-XIAMEN, who offer semiconductor substrate and epitaxial wafer for electronic and power devices fabrication. InGaAs wafer for PIN [...]
