PAM XIAMENは、サファイアとシリコン上のGaNテンプレートを提供しています。

No.1：サファイアにドープしたGaNテンプレート
1-1GaN (0001) Template( N+ ,Si-doped) on Sapphire , 2″x 5um,1sp
1-2GaN (0001) Template( N+ ,Si-doped) on Sapphire, 2″x 5um,2sp
1-3GaN (0001) Template( Semi-insulating ,Fe-doped) on Sapphire, 2″x 2um,1sp
1-4Si-doped GaN (0001) Template on Sapphire N+ type, 4″x 5 micron,1sp
1-5Mg-doped P-type GaN (0001) Template on Sapphire 10x10x 2 micron,1sp,Doping Concentration: 5E17/cc
1-6Mg-doped P-type GaN (0001) Template on Sapphire 2″x 2 micron,1sp,Doping Concentration: 5E17/cc
1-7Mg-doped P-type GaN (0001) Epitaxial Template on Sapphire 2″x 2 micron,2sp

No.2：サファイア上のドープされていないGaNテンプレート

サファイア上の2-1GaNテンプレート、C面5×5mmx 5ミクロン厚、1sp
2-2GaN Template on Sapphire, C plane, 10 x 10 mm x 5 micron,1sp
2-3GaN Template on Sapphire, M plane,10 x 10 mm x 5 micron,1sp
2-4GaN Template on Sapphire, C plane,10×10 x0.5 mm , Film: 5 micron Thick
2-5GaN Template on Sapphire (C plane), N type, undoped, 2″x 5 micron,1sp
2-6GaN Template on Sapphire (C plane), N type, undoped, 2″x 5 micron, 2sp
2-7GaN Template on Sapphire(C plane), N type, undoped, 4″x 5 Micron–Production Grade

No.3：シリコン上のGaNテンプレート

3-1 2インチシリコンウェーハ上のGaNテンプレート、GaNフィルム、Nタイプ、Si（111）基板上にドープなし、2インチx 2um、1sp
3-2GaN Template on 2″ Silicon Wafer, GaN film, N type, Si doped on Si (111) substrates, 2″x 2um, 1sp
3-3GaN Template on 2″ Silicon Wafer, GaN film, P type, Mg doped on Si (111) substrates, 2″x 2um, 1sp
3-4GaN Template on 2″ Silicon Wafer, GaN film, semi-insulating on Si (111) substrates, 2″x 2um, 1sp
3-5GaN Template on 4″ Silicon Wafer, GaN film, N type, undoped on Si (111) substrates, 4″x 2um, 1sp
3-6GaN Template on 4″ Silicon Wafer, GaN film, N type, Si doped on Si (111) substrates, 4″x 2um, 1sp
3-7GaN Template on 4″ Silicon Wafer, GaN film, P type, Mg doped on Si (111) substrates, 4″x 2um, 1sp
3-8GaN Template on 4″ Silicon Wafer, GaN film, semi-insulating on Si (111) substrates, 4″x 2um, 1sp

以下に詳細仕様の例を示します。

直径4インチ、シリコン上のGaN（Si上のGaN）
Dimension:100+/-0.1mm
GaN layer thickness : 2um
GaN layer Conductivity: n type, Si doped.
Structure:GaN on Silicon(111).
Doping concentration: xxxcm-3
XRD(102)<xx arc.sec
XRD(002)<xx arc.sec
Single side polished, epi-ready, Ra<0.5nm
Package:Packed in a class 100 clean room environment, in single container, under a nitrogen atmosphere.

FAQ about GaN Template

Q1: Do you have GaN grown on GaAs ?

A: It is not possible to grow GaN on GaAs, but it can be GaN on silicon, SiC, and sapphire.

Q2: For GaN Tamplate epi structure on SiC and Si,what maximum doping level could be in GaN and in AlN nucleation layer?

A: AlN layer:60-100nm, doping level:1E16-1E19

Q3: How to initiate the growth on your GaN wafers on sapphire substrates? It turned to quantum dots like growth for Gan-on-GaN even at the intial stage of growth with Ga droplets on the surface.

A: We grow GaN on sapphire, from sapphire side by MOCVD, and then the N face is connecting with sapphire, Ga face is for epi-growth.

Q4: Have the Mg dopants in p-type (Mg doped) GaN templates on Sapphire been activated? SO Are they ready to use, or we should activate them ourselves?
A: The Mg dopants in GaN on Sapphire templates have been activated, you do not need to activate them.

詳細については、メールでお問い合わせください。victorchan@powerwaywafer.com と powerwaymaterial@gmail.com.