GaN Template on Sapphire& Silicon

PAM XIAMEN offers GaN Template on Sapphire& Silicon.

No.1: Doped GaN Template on Sapphire
1-1GaN (0001) Template( N+ ,Si-doped) on Sapphire , 2″x 5um,1sp
1-2GaN (0001) Template( N+ ,Si-doped) on Sapphire, 2″x 5um,2sp
1-3GaN (0001) Template( Semi-insulating ,Fe-doped) on Sapphire, 2″x 2um,1sp
1-4Si-doped GaN (0001) Template on Sapphire N+ type, 4″x 5 micron,1sp
1-5Mg-doped P-type GaN (0001) Template on Sapphire 10x10x 2 micron,1sp,Doping Concentration: 5E17/cc
1-6Mg-doped P-type GaN (0001) Template on Sapphire 2″x 2 micron,1sp,Doping Concentration: 5E17/cc
1-7Mg-doped P-type GaN (0001) Epitaxial Template on Sapphire 2″x 2 micron,2sp

No.2: Undoped GaN Template on Sapphire

2-1GaN Template on Sapphire, C plane 5×5 mmx 5 micron Thickness,1sp
2-2GaN Template on Sapphire, C plane, 10 x 10 mm x 5 micron,1sp
2-3GaN Template on Sapphire, M plane,10 x 10 mm x 5 micron,1sp
2-4GaN Template on Sapphire, C plane,10×10 x0.5 mm , Film: 5 micron Thick
2-5GaN Template on Sapphire (C plane), N type, undoped, 2″x 5 micron,1sp
2-6GaN Template on Sapphire (C plane), N type, undoped, 2″x 5 micron, 2sp
2-7GaN Template on Sapphire(C plane), N type, undoped, 4″x 5 Micron–Production Grade

No.3: GaN Template on Silicon

3-1GaN Template on 2″ Silicon Wafer, GaN film, N type, undoped on Si (111) substrates, 2″x 2um, 1sp
3-2GaN Template on 2″ Silicon Wafer, GaN film, N type, Si doped on Si (111) substrates, 2″x 2um, 1sp
3-3GaN Template on 2″ Silicon Wafer, GaN film, P type, Mg doped on Si (111) substrates, 2″x 2um, 1sp
3-4GaN Template on 2″ Silicon Wafer, GaN film, semi-insulating on Si (111) substrates, 2″x 2um, 1sp
3-5GaN Template on 4″ Silicon Wafer, GaN film, N type, undoped on Si (111) substrates, 4″x 2um, 1sp
3-6GaN Template on 4″ Silicon Wafer, GaN film, N type, Si doped on Si (111) substrates, 4″x 2um, 1sp
3-7GaN Template on 4″ Silicon Wafer, GaN film, P type, Mg doped on Si (111) substrates, 4″x 2um, 1sp
3-8GaN Template on 4″ Silicon Wafer, GaN film, semi-insulating on Si (111) substrates, 4″x 2um, 1sp

Below example detail specification is listed:

4″ dia, GaN on silicon (GaN on Si)
Dimension:100+/-0.1mm
GaN layer thickness : 2um
GaN layer Conductivity: n type, Si doped.
Structure:GaN on Silicon(111).
Doping concentration: xxxcm-3
XRD(102)<xx arc.sec
XRD(002)<xx arc.sec
Single side polished, epi-ready, Ra<0.5nm
Package:Packed in a class 100 clean room environment, in single container, under a nitrogen atmosphere.

For more information, please visit our website: https://www.powerwaywafer.com/gan-wafer/gan-templates.html
And send us email at victorchan@powerwaywafer.com

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