We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate–drain region of the proposed AlGaN/GaN HEMT [...]
2018-01-10メタ著者
PAM XIAMEN は、直径 2 インチのウェーハ - 2 インチのウェーハ <211> を提供しています。 直径 2 インチ ウェーハ 2 インチ ウェーハ <211> Ge ウェーハ (211) アンドープ、直径 2 インチ x 0.45 mm、1SP、抵抗率: >45 ohm-cm Ge ウェーハ (211) アンドープ、直径 2 インチ x 0.45 mm、2SP、抵抗率: > 45 ohm-cm 詳細については、[...]
2019-04-25メタ著者
M-Plane GaN Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy
M-plane GaN epilayers have been directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy using a low temperature GaN nucleation layer. The m-plane GaN surface is optically smooth and mirror-like, with rms [...]
2013-04-12メタ著者
Ultra High Flux 2-D CdZnTe Monolithic Detector Arrays for X-Ray Imaging Applications
The performance of 2-D CdZnTe monolithic detector arrays designed for high flux X-ray imaging applications was studied. For the first time we have obtained 5 times 106 counts/s/mm2 count-rate for aCdZnTe pixelated detector array. This count-rate is more [...]
A commercially viable GaN LED was an incredibly hard nut to crack that required the development of a buffer layer and a novel approach to p-type doping. But 20 years ago it all came together. Richard Stevenson looks back at the device’s birth. (more…)
2012-03-06メタ著者
PSA-01 is a portable nuclear spectrum acquisition instrument, which integrates main amplifier，multi-channel pulse analyzer and high-voltage. Its gain, high-voltage and shaping time are adjustable. With upper computer software, it can acquit nuclear spectrum, analyzing, processing and storage data. Its built-in Li-battery could charge more [...]
2019-04-25メタ著者
