Gallium Nitride (GaN) is the basic material of blue LED and has important applications in LED and ultraviolet laser.
PAM-XIAMEN can epitaxially grow GaN wafers for LED and LD. For more wafer specification please visit:https://www.powerwaywafer.com/gan-wafer/epitaxial-wafer.html. How do we grow GaN LED epiwafer on sapphire?
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2023-04-26메타 저자
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
37
p- Si:B
35±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
16.5
n- Si:P
12.5±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
45
p- Si:B
13±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
7±1
n- Si:P
12±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
45
p- Si:B
14.5±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
7
n- Si:P
12±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.002-0.005
P/E
88
p- Si:B
80.5±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.002-0.005
P/E
88
n- Si:P
27±10%
P/N/N+
4″Øx380μm
n- Si:As[111]
0.002-0.005
P/E
105
p- Si:B
0.0035±10%
P/N/N+
4″Øx380μm
n- Si:As[111]
0.002-0.005
P/E
26
n- Si:P
5±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
10.15
n- Si:P
3.8±0.5
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
6.8±0.8
n- Si:P
0.55±0.15
N/N/N+
4″Øx380μm
n- Si:As[111]
0.004-0.008
P/EOx
16.5
n- Si:P
35 ±10%
N/N+
4″Øx508μm
n- Si:As[111]
0.002-0.005
P/E
19±1.3
n- Si:P
25±5
N/N/N+
4″Øx508μm
n- Si:As[111]
0.002-0.005
P/E
54.5±3.6
n- Si:P
4.4
N/N/N+
4″Øx380μm
n- Si:As[111]
0.001-0.005
P/EOx
20
n- Si:P
270 ±10%
N/N+
4″Øx400μm
n- Si:As[111]
0.001-0.005
P/E
20
n- Si:P
0.09 ±10%
N/N+
4″Øx400μm
n- [...]
2019-03-08메타 저자
Indium Arsenide (InAs) wafer can be provided by PAM-XIAMEN with a diameter up to 2 inch and a wide choice in off or exact orientation, high or low concentration and surface processed to optoelectronics industry. InAs wafer is an important III-V narrow band gap [...]
PAM XIAMEN offers Pyrolytic Boron Nitride.
Performance PBN’s properties, its intrinsic purity, superior mechanical strength, and thermal stability make it a superb choice for high temperature furnace and electrical components; microwave and semiconductor components; and industry standardized crucibles for Gallium Arsenide Crystal production.
Good [...]
2019-04-18메타 저자
We are investigating the feasibility of a high resolution positron emission tomography (PET) insert device based on the CdZnTe detector with 350 µm anode pixel pitch to be integrated into a conventional animal PET scanner to improve its image resolution. In this paper, we [...]
2019-10-25메타 저자
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[110]
2″
250
P/E
FZ ~50
PF<111> SF 134°
n-type Si:P
[110]
2″
900
P/E
FZ 50-100
1 F @ <111> only
n-type Si:P
[110]
2″
280
P/P
FZ 16-30
1 F @ <111> only
n-type Si:P
[110]
2″
1000
P/P
FZ 15-18
1 F @ <1,-1,0>
n-type Si:P
[100]
2″
300
P/P
FZ 1,000-1,600
SEMI Prime
n-type Si:P
[100]
2″
300
P/P
FZ 600-1,200
SEMI Prime,
n-type Si:P
[100]
2″
2000
P/E
FZ >600
SEMI Prime, , Individual cst
n-type Si:P
[100]
2″
200
P/P
FZ 500-1,500
SEMI Prime,
n-type Si:P
[100]
2″
300
P/E
FZ >300
SEMI Prime,
n-type Si:P
[100]
2″
500
P/P
FZ >200
SEMI Prime,
n-type Si:P
[100]
2″
300
P/P
FZ 50-110
SEMI Prime,
n-type Si:P
[100]
2″
280
P/P
FZ 20-70
SEMI Prime,
n-type Si:P
[100]
2″
300
P/E
FZ 10-40
SEMI Prime
n-type [...]
2019-03-07메타 저자