3 "실리콘 웨이퍼 (20)

3 "실리콘 웨이퍼 (20)

관련 게시물

CXBN-2 CubeSat to embark on an important X-ray astronomy mission

Credit: MSU A university-built small satellite known as the Cosmic X-Ray Background NanoSat-2 (CXBN-2) is being prepared for an ambitious upcoming science mission. The spacecraft – scheduled for launch into space on March 19 – is expected to deliver crucial data that could advance our [...]

2017-08-09메타 저자
6″ FZ Silicon Wafer-8

PAM XIAMEN offers 6″ FZ Silicon Wafer-8 Diameter: 150 mm N type Orientation: (100) Thickness: 675±10μm Resistivity 6,000-10,000Ωcm Double Side Polished For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

2021-03-19메타 저자
Uncooled Infrared Detector

The uncooled infrared (IR) focal plane detector is one detector that can work at room temperature without a refrigeration device, and has many advantages such as fast startup, low power consumption, small size, light weight, long life, and low cost. And the technology of [...]

2022-04-06메타 저자
Aluminium Crystal & Substrates (single crystal )

PAM XIAMEN offers Aluminium Crystal & Substrates (single crystal ). Aluminium Single Crystal Boule Grown by Bridgemen method General Properties Atomic Number       13 Atomic Weight:       26.98154 Crystal structure:     FCC Lattice constant:      4.05A Density:         [...]

2019-04-16메타 저자
4″ CZ Prime Silicon Wafer Thickness 1500±25μm

PAM XIAMEN offers 4″Prime Silicon Wafer with double side lapping 4″ CZ crystal Si wafer N type doped P Orientation<111> Resistivity 12-15Ωcm Thickness 205-220μm Prime Flat32.5±2.5mm no need for DSP, just double side lapping For more information, please visit our website: https://www.powerwaywafer.com, send us email [...]

2019-07-02메타 저자
Highly selective PEC etching of gallium nitride device structures

Highly selective PEC etching of gallium nitride device structures   Photoelectrochemical (PEC) wet etching is an attractive wet etch approach for III-Nitride materials. Compared to dry etch techniques normally applied in prevalent GaN device fabrications, PEC wet etching can provide low damage, selective etching and understanding [...]

2013-03-05메타 저자