PAM XIAMEN offers PbTe Single Crystal, Lead Telluride Crystal.(Not sell it temporarily)
Technical specifications:
Melting point: 924°C (1,695 °F; 1,197 K)
Lattice constant: a = 6.46 Angstroms
Solubility in water: insoluble
Band gap: 0.25 eV (0 K)
0.32 eV (300 K)
Electron Mobility: 1600 cm2 V−1 s−1 (0 K)
6000 cm2 V−1 s−1 (300 K)
Crystal structure: Halite (cubic)
Available sizes: 10 x 10 x1 mm, 5x5x1 mm, 20 x 10x 1mm.
Customization [...]
2019-03-14メタ著者
Korea’s LED Industry Developments
Korea’s LED industry took off at a much later date than Japan or Taiwan, in fact it developed at around the same time as China, but has advanced at an accelerated rate. However, the country’s LED industry plummeted much sharply compared to Japan, [...]
2016-09-18メタ著者
PAM XIAMEN supply InAs wafer up to 2″” diameter.
InAs <100> doped
InAs (100), P Type, Zn doped 10×10 x 0.5 mm, one side polished
InAs (100), P Type, Zn doped 5×5 x 0.5 mm, one side polished
InAs (100), S-doped 2″ dia x 0.5 [...]
2019-05-06メタ著者
我々は、フローティングゲート(FG)とフィールドプレート(FP)の両方を採用したAlGaN/GaN高電子移動度トランジスタ(HEMT)を設計・製造しました。これにより、順方向電気特性を犠牲にすることなく、AlGaN/GaN HEMTの耐圧が大幅に向上します。 提案された回路のゲート - ドレイン領域における電界強度 [...]
2013-09-03メタ著者
This study presents a new ultrathin SiC structure prepared by a catalyst free carbothermal method and post-sonication process. We have found that merging ultra-light 3D graphene foam and SiO together at high temperature leads to the formation of a complex SiC structure consisting of [...]
2019-01-09メタ著者
PAM-XIAMEN participates in the design and processing of MEMS and compound semiconductor GaAs microwave integrated circuit (GaAs MMIC) devices, and focuses on the research, development, production and service of micro-nano sensors, micro-electromechanical systems (MEMS), micro-nano manufacturing and compound semiconductor GaAs chips. We are a [...]
2021-11-30メタ著者