PAM XIAMEN offers 3″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
90
n- Si:P
41±10%
n/n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
18
n- Si:P
5±10%
n/n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
96
n- Si:P
30±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
100
n- Si:P
21±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
100
n- Si:P
16 ±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
100
n- Si:P
12±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
100
n- Si:P
20±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
135
n- Si:P
35±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
140
n- Si:P
31±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
145
n- Si:P
38±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
145
n- Si:P
25±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
150
n- Si:P
44±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
158
n- Si:P
67±10%
n/n+
3″Øx381μm
n- Si:Sb[111]
0.005-0.020
P/E
8
n- Si:P
0.63±10%
n/n+
3″Øx381μm
n- Si:Sb[111]
0.005-0.020
P/E
22.5
n- Si:P
0.07±10%
n/n+
3″Øx381μm
n- Si:Sb[111]
0.005-0.020
P/E
30
n- Si:P
6.75±10%
n/n+
3″Øx330μm
n- Si:Sb[111]
0.005-0.018
P/E
75
n- Si:P
40±10%
n/n/n+
3″Øx330μm
n- Si:Sb[111]
0.005-0.018
P/E
25
n- Si:P
2.5±10%
n/n/n+
For [...]
2019-03-08メタ著者
PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2885
p-type Si:B
[100]
4″
500
P/P
1–50
SEMI Prime, 2Flats, in Empak cst, Carbon content (9.8-14.1)E16/cc per ASTM F1319, Oxygen content 6.8E17/cc per ASTM [...]
2019-02-22メタ著者
What are Silicon Wafer Flats?
PAM XIAMEN offers Silicon Wafer Flats
Since Silicon Wafers look basically the same! Flats are cut into the edge of the wafers so users could determine the wafer’s dopant-type and orientation.
Below is an example of silicon wafers flat specs:
Spec.
2”
3”
100mm
125mm
150mm
200mm
300mm
Diameter
2.000+/-.015”
3.000+/-.025”
100+/-.5mm
125+/-.5mm
150+/-.2mm
200+/-.2mm
300+/-.2mm
50.8+/-.38mm
76.2+/-.63mm
Thicknes s
0.011+/-.001”
0.015+/-.001”
525+/-20 um [...]
2019-02-15メタ著者
PAM XIAMEN offers Single-emitter LD Chip 905nm @25W.
Brand: PAM-XIAMEN
Wavelength: 905nm
Stripe width: 84um
Output Power: 25W
Cavity Length:0.75mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]
2019-05-09メタ著者
InAs heteroepitaxial layer grown on GaAs (100) substrate is very meaningful in the field of optoelectronics, especially in the field of infrared detectors and lasers. InAs has some potential characteristics, such as high electron mobility and narrow energy gap, and many metals can be [...]
2023-02-10メタ著者
PAM XIAMEN offers 3″Prime Silicon Wafer Thickness 375um.
3″ Si wafer
Diameter: 76.2 +/- 0,1 mm
Thickness: 375±25μm
Orientation: <111>
Dopant: p-type/Boron
Resistivity<0.005Ωcm
Front side polished
Back side: frosted
SEMI standard
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com [...]
2019-07-04メタ著者