厚い炭化ケイ素基板

厚い炭化ケイ素基板

As one of leading silicon carbide wafer manufacturers, PAM-XIAMEN offers you SiC substrate with 1mm or 2mm thickness. Silicon carbide (SiC) substrate is the cornerstone of the application of gallium nitride (GaN) and silicon carbide in the third generation of semiconductor materials. In recent years, with the maturity of the silicon carbide substrate preparation processes and the reduction of production costs, SiC wafer application continues to penetrate in the field of new energy and 5G communications. More about thick bulk silicon carbide wafer please see below:

silicon carbide substrate

1. Thick Silicon Carbide Substrate Specs

Thick SiC Wafers PAM20200622-SIC
Wafer Capacity SIZE 厚さ Surface
Nitrogen Type SiC Substrates 4” 1mm, 2mm as cut
4” 1mm, 2mm double side polished
Semi-insulating SiC Substrates 4” 1mm, 2mm as cut
4” 1mm, 2mm double side polished

 

Remarks: 

熱伝導率（n型）a〜4.2 W/cm•K@298 K、c〜3.7 W/cm•K@298 K

熱伝導率（半絶縁性）a〜4.9 W/cm•K@298 K、c〜3.9 W/cm•K@298 K

2.炭化ケイ素の特性

単結晶炭化ケイ素基板には、次の優れた特性があります。

炭化ケイ素の特性
物理的特性 高硬度（ケルダール硬度：3000kg / mm2)
ダイヤモンドに次ぐ高い耐摩耗性
熱伝導率が金属銅の熱伝導率を上回っています
高い熱安定性
優れた放熱性能、高出力デバイスにとって非常に重要
化学的性質 非常に強い耐食性
4H-SiCと6H-SiCのバンドギャップはSiの約3倍、GaAsの2倍です。 4H-SiCは6H-SiCよりバンドギャップが広い

 

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詳細については、メールでお問い合わせください。 victorchan@powerwaywafer.com と powerwaymaterial@gmail.com.

2022-05-10

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