PAM XIAMEN offers KTaO3 Potassium Tantalate Crystal Substrates.
Formula
KTaO3
Point group
m3m
Cell parameters
0.3984nm
Melting point
1352.2 ℃
Density
7.025 g/cm3
Mohs hardness
6
Growth method
Czochralski method
Refractive index
2.226@633nm, 2.152@1539nm
Coefficient of thermal expansion
4.027 x 10-6/K
Specific heat (temperature J/(K g)
0.378
Transparent bands (nm)
380~4000
Crystal orientation
<100>, <110>, <111>
Regular size
20x20x0.5mm, 10x10x0.5mm, 5x5x0.5mm, other sizes are available upon request
For more information, please visit our website: [...]
2019-03-12meta-author
PAM XIAMEN offers MgAl2O4 ( spinel ) single crystals.
MgAl2O4 ( spinel ) single crystals are widely used for bulk acoustic wave and microwave devices and fast IC epitaxial substrates. It is also found that MgAl2O4 is a good substrate for III-V nitrides device. [...]
2019-05-10meta-author
Photoluminescence and Raman studies of GaN films grown by MOCVD
The photoluminescence (PL) of high quality GaN epitaxial layer grown by MOCVD was investigated for various excitation power and temperatures from 8.3 to 300K. The PL at 8.3 K and with relatively low excitation power [...]
2013-04-01meta-author
Indium Antimonide (InSb) Single Substrates
Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) offers InSb crystal wafer up to 3″ in diameter that are grown by a modified Czochralski method from highly purified, zone refined polycrystalline ingots.
1)2″InSb
Orientation:(100)
Type/Dopant:N/undoped
Diameter:50.8mm
Thickness:300±25µm;500um
Nc:<2E14a/cm3
Polish:SSP
2)2″InSb
Orientation:(100)
Type/Dopant:N/Te
Diameter:50.8mm
Carrier Concentration: 0.8 – 2.1 x 1015 cm-3
Thickness:450+/- 25 [...]
C-Plane Sapphire Substrate
AM-XIAMEN offers C-Plane Sapphire Substrate, single side polished or double side polished, please see below spec:
2” C-plane SSP Sapphire Substrate:
No
Item
Specification
1
Material
High PurityAl2O3
2
Diameter
50.8+0.1mm
3
Thickness
430土15um
4
TTV
≤10μm
5
LTV
≤1.5μm
6
Bow
-10~0μm
7
Warp
≤10μm
8
Primary Flat Length
16.0土1.0mm
9
Front Surface Roughness(Ra)|
Ra≤0.2nm
Back Surface Roughness(Ra)
0.7~1.2μm
11
Primary Flat Orientation
A-plane土0.2°
12
Surface Orientation
C-Plane(0001)
off Angle 0.2o+0.1″(M-axis);0°+0.1″(A-axis)
13
Laser Mark
back side or frontside
14
Package
25pcs/Cassette, Vacuum-sealed, Nitrogen-
filled, Class-100 Cleanroom
Remark: [...]
2020-05-20meta-author
PAM XIAMEN offers 4″ Si wafer Thickness:500±20μm.
4″ Si wafer
4″ Si, N-type, <100>, SSP
resistivity3000-4000Ωcm
thickness500±20μm
carrier lifetime>1ms(1000μm)
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) [...]
2019-08-22meta-author