PAM XIAMEN offers BN (h) – 2D crystal.
Natural Boron Nitride Single Crystal, 0.6-1.0 mm
Hexagonal boron nitride (h-BN) single crystals are ideal as a substrate for 2D materials. h-BN crystals are highly crystalline display strong Raman peak at 1566 cm-1 with FWHM less than [...]
2019-04-17meta-author
PAM XIAMEN offers 950nm laser diode wafers.
composition
thickness
PL
dopping
GaAs
~150nm
C,P=1E20
AlGaAs
~1.8um
C
InGaAs
925~935nm
AlGaAs
~3.5um
Si
GaAs substrate
350um
N=0.8-4E18
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and [...]
2019-03-13meta-author
(Author: Figo Wang, Senior Analyst, LEDinside// Translator: Nicole & Janice, Editor, LEDinside)
San’an Optoelectronics, undoubtedly, earns the most in LED industry. Both its gross profit ratio and net profit ratio are so high that San’an doesn’t seem like a manufacturing company.
Generally, manufacturing industry is said to be really outstanding when [...]
2017-07-17meta-author
PAM XIAMEN offers 3″ FZ Silicon Wafer Thickness：229-249μm.
3″ Si FZ
Diameter 76-76.6mm
Thickness 229-249μm
Resistivity 53-60Ωcm
TTV ≤10μm
RRG ≤ 7%
front and back sides acid etched
about 1.5mil is etched from the surfaces in order to remove any surface damage
1.5mil = [...]
2019-08-22meta-author
PAM XIAMEN offers Single Crystals, Wafers and Crystal Substrates.
PAM XIAMEN provides both standard and customized high quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high frequency power devices, just to name [...]
2019-03-12meta-author
PAM XIAMEN offers Si-Ge alloy crystal.
Si-Ge or silicon-germanium alloy wafer is commonly used as semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. Si-Ge alloys wafer are of interest because they have higher mobility [...]
2019-05-16meta-author
