4″ FZ Prime Silicon Wafer-7

PAM XIAMEN offers 4″ FZ Prime Silicon Wafer-7

4″ FZ Si wafer
N type
Orientation (100)
Thickness 500±15μm
Resistitvity>2000Ωcm
DSP

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

2019-10-18

M Plane N-GaN Freestanding GaN Substrate

PAM-XIAMEN offers M Plane N-GaN Freestanding GaN Substrate: Item PAM-FS-GAN M-N Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation M plane (1-100) off angle toward A-axis 0 ±0.5° M plane (1-100) off angle toward C-axis -1 ±0.2° Conduction Type N-type / Si Doped Resistivity (300K) < 0.05 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at [email protected] and [email protected]

2020-08-17meta-author

PAM XIAMEN offers black lithium Niobate wafers for Optics and SAW Components

PAM XIAMEN offers 4″ (100mm) black lithium niobate (LiNbO3) 127.860Y-cut black wafer for Optics and SAW components 1. Dimension Diameter/mm 100.0±0.3 Orientation Flat (OF)/mm 32.0±1.0 Second Refer. Flat (RF)/mm 10.0±3.0 Thickness/um 350±20 Edge bevel Edge rounding 2. Specification 2.1 Orientation Surface – cut: 127.860Y-cut±0.30 Orientation Flat (OF) Parallel to +X Plane±0.30 Second Refer. Flat (RF) CCW1350±0.50from OF 2.2 Flatness TTV ≤5um LTV ≤0.5um within an area of 5*5mm2 PLTV ≥95% (3mm [...]

2019-02-28meta-author

SINGLE CRYSTALS, WAFERS AND CRYSTAL SUBSTRATES-2

PAM XIAMEN offers Single Crystals, Wafers and Crystal Substrates. PAM XIAMEN provides both standard and customized high quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high frequency power devices, just to name [...]

2019-03-12meta-author

CZT Compton Imaging Detector

PAM-PA03 series are pixel electrode structured detectors based on CZT crystal. 1. CZT Compton Imaging Detector Specification Material CdZnTe Density 5.8g/cm3 Volume resistivity >1010Ω.cm Dimension 22.0×22.0mm2 Thickness 15.0mm Pixel size 1.38×1.38mm2 Pixel center space 1.88mm Pixel array 11×11 Electrode material Au Operation temperature -20℃-+40℃ Energy range 60KeV~2.6MeV Energy resolution(22℃) All<4%@662KeV Storage temperture 10℃~40℃ Storage humidity 20%-80% 2. Spectrum of CZT Compton Imager 3. Features Compton Imaging Detector Based on CZT Crystal Long-time stability High energy resolution [...]

2019-04-24meta-author

6″ Silicon Wafer-3

PAM XIAMEN offers 6″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:As [100] 6″ 675 OxP/EOx 0.001-0.005 SEMI TEST (spots & minor visual defects), 1Flat (57.5mm), Thermal Oxide 0.1μm±5% thick p-type Si:B [100] 6″ 735 P/P FZ >50 Prime, TTV<2μm p-type Si:B [100] 6″ 650 P/P FZ 8-13 SEMI Prime (57.5mm) n-type Si:P [100] 6″ 475 P/P FZ 60-75 SEMI Prime, MCC Lifetime>14,980μs, Lasermark n-type Si:P [112-5° towards[11-1]] ±0.5° 6″ 800 ±10 P/P FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), TTV<4μm, Lifetime>1,000μs n-type Si:P [112-5° towards[11-1]] ±0.5° 6″ 950 ±10 P/P FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), TTV<4μm, Lifetime>1,000μs Intrinsic Si:- [100] 6″ 675 P/P FZ >10,000 SEMI Prime (57.5mm) Intrinsic Si:- [100] 6″ 675 P/P FZ >10,000 SEMI [...]

2019-03-04meta-author

GaN on SiC for RF

PAM-XIAMEN offers GaN on SiC HEMT epitaxial wafer, which is HEMT stacks grown on semi insulation SiC for fabricating microwave RF devices, working on III-N material-growth and devices. 1. GaN on SiC HEMT Wafer for RF Application Wafer size 2”, 3”, 4”, 6” AlGaN/GaN HEMT structure Refer 1.2 Carrier density 6E12~2E13 cm2 Hall mobility 1300~2200 cm2v-1s-1 XRD(102)FWHM – XRD(002)FWHM – Sheet Resistivity 200~450 ohm/sq AFM [...]

2019-05-17meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

sa[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

4″ FZ Prime Silicon Wafer-7

4″ FZ Prime Silicon Wafer-7

Share this post

Related Posts

M Plane N-GaN Freestanding GaN Substrate

PAM XIAMEN offers black lithium Niobate wafers for Optics and SAW Components

SINGLE CRYSTALS, WAFERS AND CRYSTAL SUBSTRATES-2

CZT Compton Imaging Detector

6″ Silicon Wafer-3

GaN on SiC for RF

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers