PAM XIAMEN offers NON-LINEAR CRYSTAL CA4YO(BO3)3 YCOB.
To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote.
Product Information: Crystals can be customized
Formulation: Ca4YO(BO3)3 (YCOB)
Size: from 5 x 5 mm to 50 x 50 mm
Thickness: 50 ~ 40 mm
Optical Homogeneity: δn < 10-5 cm-1
Transparency Range: 202 ~ 25000 nm
Surface Finish: 1/8 λ
Surface [...]
2019-03-11meta-author
GaN(Gallium nitride), which is a compound semiconductor,it is a hard, high melting point materials, the melting point of about 1700 ° C, GaN is a high degree of ionizationof III-Vcompound (0.5 or 0.43). At atmospheric pressure, the GaN crystal is generally hexagonal wurtzite structure. In a cell four atoms, the atomic volume is about halfthat of the GaAs. GaN is Non-Toxic.
Basic Parameters for Wurtzite crystal structure at 300K:
Breakdown field
~5 x 106 V cm-1
Mobility electrons
=< 1000 cm2 V-1 s-1
Mobility holes
=< 200 cm2 V-1 s-1
Diffusion coefficient [...]
2012-05-21meta-author
GaN
PAM XIAMEN offers Free Standing GaN Single Crystal Substrates.
PAM XIAMEN offers Free Standing GaN Single Crystal Substrates with LED grade and LD grade for research or mass production, and our GaN crystal substrates has low dislocation density<=10^5 /cm2 without visible micro defects, the substrate [...]
2019-03-11meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University,Shandong Univerity, university of south carolina,Caltech Faraon lab（USA）,University of California, [...]
2019-10-29meta-author
PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 675 um.
6” Silicon wafer
Wafer Size : 6 inch Silicon
Thickness : 675 um
Both polishing
Axial direction : <100>
Type : P/B
resistivity:1-100Ωcm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-06-28meta-author
PAM XIAMEN offers 950nm laser diode wafers.
composition
thickness
PL
dopping
GaAs
~150nm
C,P=1E20
AlGaAs
~1.8um
C
InGaAs
925~935nm
AlGaAs
~3.5um
Si
GaAs substrate
350um
N=0.8-4E18
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and [...]
2019-03-13meta-author
