4″ FZ Prime Silicon Wafer-7

PAM XIAMEN offers  4″ FZ Prime Silicon Wafer-7

4″ FZ Si wafer
N type
Orientation (100)
Thickness 500±15μm
Resistitvity>2000Ωcm
DSP

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

2019-10-18

Share this post

Related Posts

3″ Silicon Wafer-2

PAM XIAMEN offers 3″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity  Thickness Surface Grade 76.2 N Phos CZ -100 1-20 950-1050 P/E PRIME 76.2 N Phos CZ -100 1000-1050 P/E PRIME 76.2 N Phos CZ -100 1-20 1975-2025 P/E PRIME 76.2 N Phos CZ -100 1-20 2900-3100 P/E PRIME 76.2 N Phos CZ -100 1-50 2900-3100 P/E PRIME 76.2 N Phos CZ -100 1-20 5900-6100 P/E PRIME 76.2 N Phos CZ -100 10-60 9900-10100 P/E PRIME 76.2 N Phos CZ -111 300-350 P/P PRIME 76.2 N Phos CZ -111 350-400 P/E PRIME 76.2 N Phos CZ -111 1975-2025 P/P PRIME 76.2 N Phos CZ -111 1-20 2900-3100 P/E PRIME 76.2 N Phos CZ -111 1-20 4900-5100 P/E PRIME 76.2 N Phos CZ -111 1-20 5900-6100 P/E PRIME 76.2 N Phos CZ -111 1-20 11900-12100 P/E PRIME 76.2 N Phos CZ -110 300-350 P/P PRIME 76.2 N Phos CZ -110 350-400 P/E PRIME 76.2 P Boron CZ -100 1-20 43768 P/P PRIME 76.2 P Boron CZ -100 1-20 40-60 P/P PRIME 76.2 P Boron CZ -100 1-20 80-100 P/P PRIME 76.2 P Boron CZ -100 1-20 140-160 P/P PRIME 76.2 P Boron FZ -100 >3000 300-350 P/P PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]

2019-03-04meta-author
Single crystal TiO2 (Rutile) with Nb doped

PAM XIAMEN offers Single crystal TiO2 (Rutile) with Nb doped. Rutile ( TiO2) single crystal is one of the most suitable materials for spectral prisms and polarizing devices such as optical isolators and beam displacers because it has a large birefringence with a high [...]

2019-05-20meta-author
CeO2 Epi Film on YSZ

PAM XIAMEN offers CeO2 Epi Film on YSZ. CeO2 Film (40 nm one side) on YSZ <100> 10x10x0.5 mm Epitaxial thin Film Composition <100>  CeO2 Epitaxial Film Thickness 40 nm +/- 10 nm Growth method Spin coating Epitaxial FWHM < 5 o  Substrate <100>, YSZ, 10x10x0.5 mm, one side polished   CeO2 Film (40 nm one side) on YSZ [...]

2019-04-19meta-author
Porous Silicon Wafer

Porous Silicon Wafer PAM XIAMEN offers Porous Silicon Wafer. The novel uses of porous silicon include powering sattelites and perhaps even space ships!       In the early 2000s scientists discoverd that hydrogenated porous silicon reacts explosively with oxygen at very low (cryogenic) temperatures. A porous silicon wafer in [...]

2019-02-15meta-author
Super Low Stress Nitron on Silicon Wafers

Super Low Stress Nitron on Silicon Wafers PAM XIAMEN offers Super Low Stress Nitron on Silicon Wafers When you need the thickest nitride Super Low Stress Nitride is the nitride to use. We can deposit up to 4 micron of nitride using this method of nitride deposition. SPECIFICATIONS Thickness range: 50Å [...]

2019-02-11meta-author
6″CZ Prime Silicon Wafer

PAM XIAMEN offers 6″CZ Prime Silicon Wafer Item7, 50pcs Silicon wafer: i. Diameter: 150 mm ± .5 mm, ii. Thickness: 675μm ±25μm iii. Doping: P type iv. Orientation: (100) ± 0.5° v. TTV: ≤ 5 μm vi. Bow and Warp: ≤ 20 μm Growth: CZ Grade: Prime Resistivity: 1 Ohm-cm to 10 Ohm-cm Surface: single side [...]

2020-03-30meta-author