Tag - GaN on Si

Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates

We have used MBE to grow in AlN/GaN superlattices, with different number of periods, on 2.5-μm-thick MOVPE-GaN templates to study the development of defects such as surface deformation due to strain. After growth the samples were studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), XRD and Fourier [...]

Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts

Highlights •We fabricated HV AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain electrodes. •We examine impact of temperature on the electrical parameters of fabricated devices. •The use of Schottky drain contacts increase the breakdown voltage from 505 to 900 V. •The SD-HEMTs are characterized by lower increase of Ron with increasing temperature. Abstract In this work [...]

GaN Epitaxial Technology

GaN Epitaxial Technology GaN technology today is important technology player- Gallium Nitride on Silicon Carbide (GaN on SiC), Gallium Nitride on Silicon (GaN on Si) and Gallium Nitride on Sapphire (GaN on Sapphire). They are used in LED, RF and microwave devices. We can see a dilemma in the GaN [...]

Hybrid Chips of Gallium Nitride and Silicon

Hybrid Chips of Gallium Nitride and Silicon Researchers at MIT say they’ve made a big step toward combining the capabilities of the silicon used in computer chips with properties of the compound semiconductors found in lasers and high-powered electronics. In the October issue of IEEE Electron Device Letters, they report having [...]