Tag - InGaN

Reliability analysis of InGaN Blu-Ray laser diode

Reliability analysis of InGaN Blu-Ray laser diodeThe purpose of this work is an in depth reliability analysis of Blu-Ray InGaN laser diodes (LD) submitted to CW stress at different currents and temperatures. During reliability tests, LD devices exhibit a gradual threshold current increase, while slope efficiency is almost not [...]

Temperature dependent growth of InGaN/GaN single quantum well

Temperature dependent growth of InGaN/GaN single quantum wellInGaN/GaN single quantum well (SQW) structures under various InGaN growth temperatures have been grown by metal organic chemical vapor deposition (MOCVD), the surface morphologies and optical properties are investigated. The radius of the typical V-pits on the SQW surface is affected by [...]