Tag - InGaN

Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays

Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays In this study, the periodic SiO2 nanosphere nanopatterned sapphire substrate (SiO2-NPSS) was made using self-assembled SiO2 nanosphere monolayer template and inductively coupled plasma (ICP) etching. And the self-assembled SiO2 nanosphere monolayer was directly embedded into the GaN/sapphire interface by nanoscale epitaxial [...]

Reliability analysis of InGaN Blu-Ray laser diode

Reliability analysis of InGaN Blu-Ray laser diode The purpose of this work is an in depth reliability analysis of Blu-Ray InGaN laser diodes (LD) submitted to CW stress at different currents and temperatures. During reliability tests, LD devices exhibit a gradual threshold current increase, while slope efficiency is almost not [...]

Temperature dependent growth of InGaN/GaN single quantum well

Temperature dependent growth of InGaN/GaN single quantum well InGaN/GaN single quantum well (SQW) structures under various InGaN growth temperatures have been grown by metal organic chemical vapor deposition (MOCVD), the surface morphologies and optical properties are investigated. The radius of the typical V-pits on the SQW surface is affected by [...]