GaAs (Gallium Arsenide) Wafers

GaAs (Gallium Arsenide) Wafers

PAM-XIAMEN manufactures Epi-ready GaAs(Gallium Arsenide) Wafer Substrate including semi-conducting n type, semi-conductor undoped and p type with prime grade and dummy grade. The resistivity of GaAs wafer depends on dopants, Si doped or Zn doped is (0.001~0.009) ohm.cm, undoped one is >=1E7 ohm.cm. the orientation of Gallium Arsenide wafer should be (100) and (111), for (100)orientation, it can be 2°/6°/15° off. The EPD of GaAs wafer normally is <5000/cm2 for LED or <500/cm2 for LD or microelectronics.

  • Description

Product Description

(GaAs) Gallium Arsenide Wafers

PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to  polishing processing and built a 100-class clean room for wafer cleaning and packaging.  Our GaAs wafer include  2~6 inch  ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.

(GaAs)Gallium Arsenide Wafers for LED Applications

 

ItemSpecificationsRemarks
Conduction TypeSC/n-typeSC/p-type with Zn dope Available
Growth MethodVGF 
DopantSiliconZn available
Wafer Diamter2, 3 & 4 inchIngot or as-cut availalbe
Crystal Orientation(100)2°/6°/15° off (110)Other misorientation available
OFEJ or US 
Carrier Concentration(0.4~2.5)E18/cm3 
Resistivity at RT(1.5~9)E-3 Ohm.cm 
Mobility1500~3000cm2/V.sec 
Etch Pit Density<5000/cm2 
Laser Markingupon request 
Surface FinishP/E or P/P 
Thickness220~450um 
Epitaxy ReadyYes 
PackageSingle wafer container or cassette

 

(GaAs)Gallium Arsenide Wafers for LD Applications

 

ItemSpecificationsRemarks
Conduction TypeSC/n-type 
Growth MethodVGF 
DopantSilicon 
Wafer Diamter2, 3 & 4 inchIngot or as-cut available
Crystal Orientation(100)2°/6°/15°off (110)Other misorientation available
OFEJ or US 
Carrier Concentration(0.4~2.5)E18/cm3 
Resistivity at RT(1.5~9)E-3 Ohm.cm 
Mobility1500~3000 cm2/V.sec 
Etch Pit Density<500/cm2 
Laser Markingupon request 
Surface FinishP/E or P/P 
Thickness220~350um 
Epitaxy ReadyYes 
PackageSingle wafer container or cassette

 

(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

 

ItemSpecificationsRemarks
Conduction TypeInsulating 
Growth MethodVGF 
DopantUndoped 
Wafer Diamter2, 3 & 4 inch Ingot available
Crystal Orientation(100)+/- 0.5° 
OFEJ, US or notch 
Carrier Concentrationn/a 
Resistivity at RT>1E7 Ohm.cm 
Mobility>5000 cm2/V.sec 
Etch Pit Density<8000 /cm2 
Laser Markingupon request 
Surface FinishP/P 
Thickness350~675um 
Epitaxy ReadyYes 
PackageSingle wafer container or cassette

 

6″ (150mm)(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

 

ItemSpecificationsRemarks
Conduction TypeSemi-insulating –
Grow MethodVGF –
DopantUndoped –
TypeN –
Diamater(mm)150±0.25 –
Orientation(100)0°±3.0° –
NOTCH Orientation〔010〕±2° –
NOTCH Deepth(mm)(1-1.25)mm   89°-95° –
Carrier Concentrationplease consult our sales team –
Resistivity(ohm.cm)>1.0×107 or 0.8-9 x10-3 –
Mobility(cm2/v.s)please consult our sales team –
Dislocationplease consult our sales team –
Thickness(µm)675±25 –
Edge Exclusion for Bow and Warp(mm)please consult our sales team –
Bow(µm)please consult our sales team –
Warp(µm)≤20.0 –
TTV(µm)≤10.0 –
TIR(µm)≤10.0 –
LFPD(µm)please consult our sales team –
PolishingP/P  Epi-Ready –

 

2″(50.8mm) LT-GaAs (Low Temperature-Grown Galium Arsenide) Wafer Specifications

 

ItemSpecifications
Conduction TypeSemi-insulating
Grow MethodVGF
DopantUndoped
TypeN
Diamater(mm)150±0.25
Orientation(100)0°±3.0°
NOTCH Orientation〔010〕±2°
NOTCH Deepth(mm)(1-1.25)mm   89°-95°
Carrier Concentrationplease consult our sales team
Resistivity(ohm.cm)>1.0×107 or 0.8-9 x10-3
Mobility(cm2/v.s)please consult our sales team
Dislocationplease consult our sales team
Thickness(µm)675±25
Edge Exclusion for Bow and Warp(mm)please consult our sales team
Bow(µm)please consult our sales team
Warp(µm)≤20.0
TTV(µm)≤10.0
TIR(µm)≤10.0
LFPD(µm)please consult our sales team
PolishingP/P  Epi-Ready
 
* We also can provide poly crystal GaAs bar, 99.9999%(6N).
 

Test certificate of GaAs wafer can include below analysis if necessary:

1/Surface roughness of Gallium Arsenide including front side and backside(nanometers).

2/Doping concentration of Gallium Arsenide(cm-3)

3/EPD of Gallium Arsenide(cm-2)

4/Mobility of Gallium Arsendie(V.sec)

5/X-ray diffraction analysis (rocking curves) of Gallium Arsenide: Diffraction reflection curve half-width

6/Low-temperature photoluminescence (emission spectra in the range 0.7-1.0 μm) of Gallium Arsenide: The fraction of exciton photoluminescence in the emission spectrum of the near-IR range at a temperature of 4K or 5 K and an optical excitation density of 1 W / cm2

7/Transmission rate or Absorption coefficient: for instant, we can measure absorption coefficient of single crystal undoped GaAs at 1064nm: <0.6423 cm-1, and this corresponds to a transmission minimum of 33.2% for an exactly 6.5mm thick blank at 1064nm.

 

You may also like…