GaAs (Gallium Arsenide) Wafers

GaAs (Gallium Arsenide) Wafers

PAM-XIAMEN manufactures Epi-ready GaAs(Gallium Arsenide) Wafer Substrate including semi-conducting n type, semi-conductor undoped and p type with prime grade and dummy grade. The resistivity of GaAs wafer depends on dopants, Si doped or Zn doped is (0.001~0.009) ohm.cm, undoped one is >=1E7 ohm.cm. the orientation of Gallium Arsenide wafer should be (100) and (111), for (100)orientation, it can be 2°/6°/15° off. The EPD of GaAs wafer normally is <5000/cm2 for LED or <500/cm2 for LD or microelectronics.

  • Description

Product Description

(GaAs) Gallium Arsenide Wafers

PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to  polishing processing and built a 100-class clean room for wafer cleaning and packaging.  Our GaAs wafer include  2~6 inch  ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.

(GaAs)Gallium Arsenide Wafers for LED Applications

 

Item Specifications Remarks
Conduction Type SC/n-type SC/p-type with Zn dope Available
Growth Method VGF  
Dopant Silicon Zn available
Wafer Diamter 2, 3 & 4 inch Ingot or as-cut availalbe
Crystal Orientation (100)2°/6°/15° off (110) Other misorientation available
OF EJ or US  
Carrier Concentration (0.4~2.5)E18/cm3  
Resistivity at RT (1.5~9)E-3 Ohm.cm  
Mobility 1500~3000cm2/V.sec  
Etch Pit Density <5000/cm2  
Laser Marking upon request  
Surface Finish P/E or P/P  
Thickness 220~450um  
Epitaxy Ready Yes  
Package Single wafer container or cassette

 

(GaAs)Gallium Arsenide Wafers for LD Applications

 

Item Specifications Remarks
Conduction Type SC/n-type  
Growth Method VGF  
Dopant Silicon  
Wafer Diamter 2, 3 & 4 inch Ingot or as-cut available
Crystal Orientation (100)2°/6°/15°off (110) Other misorientation available
OF EJ or US  
Carrier Concentration (0.4~2.5)E18/cm3  
Resistivity at RT (1.5~9)E-3 Ohm.cm  
Mobility 1500~3000 cm2/V.sec  
Etch Pit Density <500/cm2  
Laser Marking upon request  
Surface Finish P/E or P/P  
Thickness 220~350um  
Epitaxy Ready Yes  
Package Single wafer container or cassette

 

(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

 

Item Specifications Remarks
Conduction Type Insulating  
Growth Method VGF  
Dopant Undoped  
Wafer Diamter 2, 3 & 4 inch  Ingot available
Crystal Orientation (100)+/- 0.5°  
OF EJ, US or notch  
Carrier Concentration n/a  
Resistivity at RT >1E7 Ohm.cm  
Mobility >5000 cm2/V.sec  
Etch Pit Density <8000 /cm2  
Laser Marking upon request  
Surface Finish P/P  
Thickness 350~675um  
Epitaxy Ready Yes  
Package Single wafer container or cassette

 

6″ (150mm)(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

 

Item Specifications Remarks
Conduction Type Semi-insulating  –
Grow Method VGF  –
Dopant Undoped  –
Type N  –
Diamater(mm) 150±0.25  –
Orientation (100)0°±3.0°  –
NOTCH Orientation 〔010〕±2°  –
NOTCH Deepth(mm) (1-1.25)mm   89°-95°  –
Carrier Concentration please consult our sales team  –
Resistivity(ohm.cm) >1.0×107 or 0.8-9 x10-3  –
Mobility(cm2/v.s) please consult our sales team  –
Dislocation please consult our sales team  –
Thickness(µm) 675±25  –
Edge Exclusion for Bow and Warp(mm) please consult our sales team  –
Bow(µm) please consult our sales team  –
Warp(µm) ≤20.0  –
TTV(µm) ≤10.0  –
TIR(µm) ≤10.0  –
LFPD(µm) please consult our sales team  –
Polishing P/P  Epi-Ready  –

 

2″(50.8mm) LT-GaAs (Low Temperature-Grown Galium Arsenide) Wafer Specifications

 

Item Specifications
Conduction Type Semi-insulating
Grow Method VGF
Dopant Undoped
Type N
Diamater(mm) 150±0.25
Orientation (100)0°±3.0°
NOTCH Orientation 〔010〕±2°
NOTCH Deepth(mm) (1-1.25)mm   89°-95°
Carrier Concentration please consult our sales team
Resistivity(ohm.cm) >1.0×107 or 0.8-9 x10-3
Mobility(cm2/v.s) please consult our sales team
Dislocation please consult our sales team
Thickness(µm) 675±25
Edge Exclusion for Bow and Warp(mm) please consult our sales team
Bow(µm) please consult our sales team
Warp(µm) ≤20.0
TTV(µm) ≤10.0
TIR(µm) ≤10.0
LFPD(µm) please consult our sales team
Polishing P/P  Epi-Ready
 
* We also can provide poly crystal GaAs bar, 99.9999%(6N).
 

Test certificate of GaAs wafer can include below analysis if necessary:

1/Surface roughness of Gallium Arsenide including front side and backside(nanometers).

2/Doping concentration of Gallium Arsenide(cm-3)

3/EPD of Gallium Arsenide(cm-2)

4/Mobility of Gallium Arsendie(V.sec)

5/X-ray diffraction analysis (rocking curves) of Gallium Arsenide: Diffraction reflection curve half-width

6/Low-temperature photoluminescence (emission spectra in the range 0.7-1.0 μm) of Gallium Arsenide: The fraction of exciton photoluminescence in the emission spectrum of the near-IR range at a temperature of 4K or 5 K and an optical excitation density of 1 W / cm2

7/Transmission rate or Absorption coefficient: for instant, we can measure absorption coefficient of single crystal undoped GaAs at 1064nm: <0.6423 cm-1, and this corresponds to a transmission minimum of 33.2% for an exactly 6.5mm thick blank at 1064nm.

 

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