GaN Templates

PAM-XIAMEN’s Template Products consist of crystalline layers of (gallium nitride)GaN templates, (aluminum nitride)AlN template,(aluminum gallium nitride) AlGaN templates and (indium gallium nitride) InGaN templates, which are deposited on sapphire
  • Description

Product Description

GaN(gallium nitride ) Templates

PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial device layers, with better structural quality and higher thermal conductivity,which can improve devices in the cost, yield, and performance.

2″(50.8mm) GaN Templates Epitaxy on Sapphire Substrates

Item PAM-2inch-GaNT-N PAM-2inch-GaNT-SI
Conduction Type N-type Semi-insulating
Dopant Si doped or undoped Fe doped
Size 2″(50mm) dia.
Thickness 4um,20um,30um,50um,100um 30um,90um
Orientation C-axis(0001)+/-1°
Resistivity(300K) <0.05Ω·cm >1×106Ω·cm
Dislocation Density <1x108cm-2
Substrate Structure  GaN on Sapphire(0001)
Surface Finish Single or Double Side Polished,epi-ready
Usable Area ≥ 90 %

2″ (50.8mm)GaN Templates Epitaxy on Sapphire Substrates

Item PAM-GaNT-P
Conduction Type P-type
Dopant Mg doped
Size 2″(50mm) dia.
Thickness 5um,20um,30um,50um,100um
Orientation C-axis(0001)+/-1°
Resistivity(300K) <1Ω·cm or custom
Dopant Concentration 1E17(cm-3)  or custom
Substrate Structure  GaN on Sapphire(0001)
Surface Finish Single or Double Side Polished,epi-ready
Usable Area ≥ 90 %

 3″(76.2mm)GaN Templates Epitaxy on Sapphire Substrates

Item PAM-3inch-GaNT-N
Conduction Type N-type
Dopant Si doped or undoped
Exclusion Zone: 5mm from outer diameter
Thickness: 20um,30um
Dislocation density < 1x108cm-2
Sheet resistance (300K): <0.05Ω·cm
Substrate:  sapphire
Orientation :  C-plane
Sapphire thickness: 430um
Polishing: Single side Polished,epi-ready, with atomic steps.
Backside coating: (custom)high quality Titanium coating, thickness > 0.4 μm
Packing: Individually packed under argon
Atmosphere vacuum sealed in class 100 clean room.

3″(76.2mm)GaN Templates Epitaxy on Sapphire Substrates

Item PAM-3inch-GaNT-SI
Conduction Type Semi-insulating
Dopant Fe Doped
Exclusion Zone: 5mm from outer diameter
Thickness: 20um,30um,90um(20um is the best)
Dislocation density < 1x108cm-2
Sheet resistance (300K):  >106 ohm.cm
Substrate:  sapphire
Orientation :  C-plane
Sapphire thickness: 430um
Polishing: Single side Polished,epi-ready, with atomic steps.
Backside coating: (custom)high quality Titanium coating, thickness > 0.4 μm
Packing: Individually packed under argon Atmosphere vacuum sealed in class 100 clean room.

4″(100mm)GaN Templates Epitaxial on Sapphire Substrates

Item PAM-4inch-GaNT-N
Conduction Type N-type
Dopant   undoped
Thickness: 4um
Dislocation density < 1x108cm-2
Sheet resistance (300K): <0.05Ω·cm
Substrate:  sapphire
Orientation :  C-plane
Sapphire thickness:
Polishing: Single side Polished,epi-ready, with atomic steps.
Packing: Individually packed under argon Atmosphere
vacuum sealed in class 100 clean room.

2″ (50.8mm)AlGaN, InGaN, AlN Epitaxy on Sapphire Templates: custom
2”(50.8mm)AlN Epitaxy on Sapphire Templates

Item PAM-AlNT-SI
Conduction Type semi-insulating
Diameter Ф 50.8mm ± 1mm
Thickness: 1000nm+/- 10%
Substrate:  sapphire
Orientation : C-axis(0001)+/-1°
Orientation Flat A-plane
XRD FWHM of (0002) <200 arcsec.
Useable Surface Area ≥90%
 Polishing: None

2”(50.8mm)InGaN Epitaxy on Sapphire Templates

Item PAM-INGAN
Conduction Type
Diameter Ф 50.8mm ± 1mm
Thickness: 100-200nm, custom
Substrate:  sapphire
Orientation : C-axis(0001)+/-1O
Dopant In
Dislocation Density ~ 108 cm-2
Useable Surface Area ≥90%
Surface Finish Single or Double Side Polished,epi-ready

2”(50.8mm)AlGaN Epitaxy on Sapphire Templates

Item PAM-AlNT-SI
Conduction Type semi-insulating
Diameter Ф 50.8mm ± 1mm
Thickness: 1000nm+/- 10%
Substrate:  sapphire
Orientation : C-plane
Orientation Flat A-plane
XRD FWHM of (0002) <200 arcsec.
Useable Surface Area ≥90%
 Polishing: None

GaN Template on Sapphire& Silicon

2″(50.8mm)GaN on 4H or 6H SiC substrate

1)Undoped GaN buffer or AlN buffer are available;
2)n-type(Si doped or undoped), p-type or semi-insulating GaN epitaxial layers available;
3)vertical conductive structures on n-type SiC;
4)AlGaN – 20-60nm thick, (20%-30%Al), Si doped buffer;
5)GaN n-type layer on 330µm+/-25um thick 2” wafer.
6) Single or double side polished, epi-ready, Ra<0.5um
7)Typical value on XRD:
Wafer ID Substrate ID XRD(102) XRD(002) Thickness
#2153 X-70105033 (with AlN) 298 167 679um
2″(50.8mm) GaN on Silicon Substrate
1) GaN layer thickness:50nm-4um;
2) N type or semi-insulating GaN are available;
3) Single or double side polished, epi-ready, Ra<0.5um

6″ (150mm)n-GaN on double-side polished flat sapphire2″(50.8mm)GaN on 4H or 6H SiC substrate

Target remark
Substrate diameter 150 mm +/- 0.15 mm
Substrate thickness 1300 um or 1000um +/- 25 um
c-plane (0001), offcut angle towards m-plane 0.2 deg +/- 0.1 deg
Single primary flat length 47.5 mm +/- 1 mm
Flat orientation a-plane +/- 0.2 deg
Si-doped n-GaN thickness 4 um +/- 5%
Si concentration in n-GaN 5e18 cm-3 yes
u-GaN thickness 1 um no this layer
XRD rocking curve (002) < 250 arcsec <300 arcsec
XRD rocking curve (102) < 250 arcsec <350 arcsec
Dislocation density < 5e8 cm-2 yes
Front side surface, AFM (5×5 um2) Ra < 0.5 nm, Epi-ready yes
Back side surfac\e 0.6 – 1.2 um, fine ground yes
Wafer bowing < 100 um no this data
n-GaN resistivity (300K) < 0.01 ohm-cm2 yes
Total thickness variation < 25 um <10um
Defect density Macro defects (>100 um):< 1/wafer  Micro defects (1-100 um):< 1/cm2 Macro defects (>100 um):< 10/wafer Micro defects (1-100 um):< 10/cm2
Laser marking on the backside of the wafer flat yes
Package packaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers, under nitrogen atmosphere, double sealed yes
Edge exclusion < 3 mm yes
Useable surface area > 90% yes

Hydride Vapour Phase Epitaxy (HVPE) process

Grown by HVPE process and technology for the production of compound semiconductors such as GaN, AlN, and AlGaN. They are used in a wide applications:solid state lighting, short wavelength optoelectronics and RF power device.

In the HVPE process, Group III nitrides (such as GaN, AlN) are formed by reacting hot gaseous metal chlorides (such as GaCl or AlCl) with ammonia gas (NH3). The metal chlorides are generated by passing hot HCl gas over the hot Group III metals. All reactions are done in a temperature controlled quartz furnace.

We will offer test reports, please see below an example:

AlGaN template structure report

FWHM and XRD report

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