GaAs (Gallium Arsenide) Wafers
PAM-XIAMEN manufactures Epi-ready GaAs(Gallium Arsenide) Wafer Substrate including semi-conducting n type, semi-conductor undoped and p type with prime grade and dummy grade. The resistivity of GaAs wafer depends on dopants, Si doped or Zn doped is (0.001~0.009) ohm.cm, undoped one is >=1E7 ohm.cm. the orientation of Gallium Arsenide wafer should be (100) and (111), for (100)orientation, it can be 2°/6°/15° off. The EPD of GaAs wafer normally is <5000/cm2 for LED or <500/cm2 for LD or microelectronics.
- Description
Product Description
(GaAs) Gallium Arsenide Wafers
PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.
(GaAs)Gallium Arsenide Wafers for LED Applications
| Item | Specifications | Remarks |
| Conduction Type | SC/n-type | SC/p-type with Zn dope Available |
| Growth Method | VGF | |
| Dopant | Silicon | Zn available |
| Wafer Diamter | 2, 3 & 4 inch | Ingot or as-cut availalbe |
| Crystal Orientation | (100)2°/6°/15° off (110) | Other misorientation available |
| OF | EJ or US | |
| Carrier Concentration | (0.4~2.5)E18/cm3 | |
| Resistivity at RT | (1.5~9)E-3 Ohm.cm | |
| Mobility | 1500~3000cm2/V.sec | |
| Etch Pit Density | <5000/cm2 | |
| Laser Marking | upon request | |
| Surface Finish | P/E or P/P | |
| Thickness | 220~450um | |
| Epitaxy Ready | Yes | |
| Package | Single wafer container or cassette | |
(GaAs)Gallium Arsenide Wafers for LD Applications
| Item | Specifications | Remarks |
| Conduction Type | SC/n-type | |
| Growth Method | VGF | |
| Dopant | Silicon | |
| Wafer Diamter | 2, 3 & 4 inch | Ingot or as-cut available |
| Crystal Orientation | (100)2°/6°/15°off (110) | Other misorientation available |
| OF | EJ or US | |
| Carrier Concentration | (0.4~2.5)E18/cm3 | |
| Resistivity at RT | (1.5~9)E-3 Ohm.cm | |
| Mobility | 1500~3000 cm2/V.sec | |
| Etch Pit Density | <500/cm2 | |
| Laser Marking | upon request | |
| Surface Finish | P/E or P/P | |
| Thickness | 220~350um | |
| Epitaxy Ready | Yes | |
| Package | Single wafer container or cassette | |
(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications
| Item | Specifications | Remarks |
| Conduction Type | Insulating | |
| Growth Method | VGF | |
| Dopant | Undoped | |
| Wafer Diamter | 2, 3 & 4 inch | Ingot available |
| Crystal Orientation | (100)+/- 0.5° | |
| OF | EJ, US or notch | |
| Carrier Concentration | n/a | |
| Resistivity at RT | >1E7 Ohm.cm | |
| Mobility | >5000 cm2/V.sec | |
| Etch Pit Density | <8000 /cm2 | |
| Laser Marking | upon request | |
| Surface Finish | P/P | |
| Thickness | 350~675um | |
| Epitaxy Ready | Yes | |
| Package | Single wafer container or cassette | |
6″ (150mm)(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications
| Item | Specifications | Remarks |
| Conduction Type | Semi-insulating | – |
| Grow Method | VGF | – |
| Dopant | Undoped | – |
| Type | N | – |
| Diamater(mm) | 150±0.25 | – |
| Orientation | (100)0°±3.0° | – |
| NOTCH Orientation | 〔010〕±2° | – |
| NOTCH Deepth(mm) | (1-1.25)mm 89°-95° | – |
| Carrier Concentration | please consult our sales team | – |
| Resistivity(ohm.cm) | ＞1.0×107 or 0.8-9 x10-3 | – |
| Mobility(cm2/v.s) | please consult our sales team | – |
| Dislocation | please consult our sales team | – |
| Thickness(µm) | 675±25 | – |
| Edge Exclusion for Bow and Warp(mm) | please consult our sales team | – |
| Bow(µm) | please consult our sales team | – |
| Warp(µm) | ≤20.0 | – |
| TTV(µm) | ≤10.0 | – |
| TIR(µm) | ≤10.0 | – |
| LFPD(µm) | please consult our sales team | – |
| Polishing | P/P Epi-Ready | – |
2″(50.8mm) LT-GaAs (Low Temperature-Grown Galium Arsenide) Wafer Specifications
| Item | Specifications |
| Conduction Type | Semi-insulating |
| Grow Method | VGF |
| Dopant | Undoped |
| Type | N |
| Diamater(mm) | 150±0.25 |
| Orientation | (100)0°±3.0° |
| NOTCH Orientation | 〔010〕±2° |
| NOTCH Deepth(mm) | (1-1.25)mm 89°-95° |
| Carrier Concentration | please consult our sales team |
| Resistivity(ohm.cm) | ＞1.0×107 or 0.8-9 x10-3 |
| Mobility(cm2/v.s) | please consult our sales team |
| Dislocation | please consult our sales team |
| Thickness(µm) | 675±25 |
| Edge Exclusion for Bow and Warp(mm) | please consult our sales team |
| Bow(µm) | please consult our sales team |
| Warp(µm) | ≤20.0 |
| TTV(µm) | ≤10.0 |
| TIR(µm) | ≤10.0 |
| LFPD(µm) | please consult our sales team |
| Polishing | P/P Epi-Ready |
Test certificate of GaAs wafer can include below analysis if necessary:
1/Surface roughness of Gallium Arsenide including front side and backside(nanometers).
2/Doping concentration of Gallium Arsenide(cm-3)
3/EPD of Gallium Arsenide(cm-2)
4/Mobility of Gallium Arsendie(V.sec)
5/X-ray diffraction analysis (rocking curves) of Gallium Arsenide: Diffraction reflection curve half-width
6/Low-temperature photoluminescence (emission spectra in the range 0.7-1.0 μm) of Gallium Arsenide: The fraction of exciton photoluminescence in the emission spectrum of the near-IR range at a temperature of 4K or 5 K and an optical excitation density of 1 W / cm2
7/Transmission rate or Absorption coefficient: for instant, we can measure absorption coefficient of single crystal undoped GaAs at 1064nm: <0.6423 cm-1, and this corresponds to a transmission minimum of 33.2% for an exactly 6.5mm thick blank at 1064nm.
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