GaAs (Gallium Arsenide) Wafers

GaAs (Gallium Arsenide) Wafers

PAM-XIAMEN manufactures Epi-ready GaAs(Gallium Arsenide) Wafer Substrate including semi-conducting n type, semi-conductor undoped and p type with prime grade and dummy grade. The resistivity of GaAs wafer depends on dopants, Si doped or Zn doped is (0.001~0.009) ohm.cm, undoped one is >=1E7 ohm.cm. the orientation of Gallium Arsenide wafer should be (100) and (111), for (100)orientation, it can be 2°/6°/15° off. The EPD of GaAs wafer normally is <5000/cm2 for LED or <500/cm2 for LD or microelectronics.

  • Description

Product Description

(GaAs) Gallium Arsenide Wafers

PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to  polishing processing and built a 100-class clean room for wafer cleaning and packaging.  Our GaAs wafer include  2~6 inch  ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.

(GaAs)Gallium Arsenide Wafers for LED Applications

 

Item Specifications Remarks

Conduction Type

SC/n-type

SC/p-type with Zn dope Available

Growth Method

VGF

Dopant

Silicon

Zn available

Wafer Diamter

2, 3 & 4 inch

Ingot or as-cut availalbe

Crystal Orientation

(100)2°/6°/15° off (110)

Other misorientation available

OF

EJ or US

Carrier Concentration

(0.4~2.5)E18/cm3

 

Resistivity at RT

(1.5~9)E-3 Ohm.cm

Mobility

1500~3000cm2/V.sec

 

Etch Pit Density

<5000/cm2

Laser Marking

upon request

 

Surface Finish

P/E or P/P

 

Thickness

220~450um

 

Epitaxy Ready

Yes

Package

Single wafer container or cassette

(GaAs)Gallium Arsenide Wafers for LD Applications

Item Specifications Remarks

Conduction Type

SC/n-type

 

Growth Method

VGF

Dopant

Silicon

 

Wafer Diamter

2, 3 & 4 inch

Ingot or as-cut available

Crystal Orientation

(100)2°/6°/15°off (110)

Other misorientation available

OF

EJ or US

Carrier Concentration

(0.4~2.5)E18/cm3

 

Resistivity at RT

(1.5~9)E-3 Ohm.cm

Mobility

1500~3000 cm2/V.sec

 

Etch Pit Density

<500/cm2

Laser Marking

upon request

 

Surface Finish

P/E or P/P

Thickness

220~350um

 

Epitaxy Ready

Yes

Package

Single wafer container or cassette

(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

Item Specifications Remarks

Conduction Type

Insulating

 

Growth Method

VGF

Dopant

Undoped

 

Wafer Diamter

2, 3 & 4 inch

 Ingot available              

Crystal Orientation

(100)+/- 0.5°

 

OF

EJ, US or notch

Carrier Concentration

n/a

 

Resistivity at RT

>1E7 Ohm.cm

Mobility

>5000 cm2/V.sec

 

Etch Pit Density

<8000 /cm2

Laser Marking

upon request

 

Surface Finish

P/P

Thickness

350~675um

 

Epitaxy Ready

Yes

 

Package

Single wafer container or cassette

6″ (150mm)(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

Item Specifications Remarks

Conduction Type

Semi-insulating

 

Grow Method

VGF

Dopant

Undoped

 

Type

N

Diamater(mm)

150±0.25

 

Orientation

(100)0°±3.0°

NOTCH Orientation

010±2°

 

NOTCH Deepth(mm)

(1-1.25)mm   89°-95°

Carrier Concentration

please consult our sales team

 

Resistivity(ohm.cm)

1.0×10or 0.8-9 x10-3

Mobility(cm2/v.s)

please consult our sales team

 

Dislocation

please consult our sales team

Thickness(µm)

675±25

 

Edge Exclusion for Bow and Warp(mm)

please consult our sales team

Bow(µm)

please consult our sales team

 

Warp(µm)

≤20.0

TTV(µm)

10.0

 

TIR(µm)

10.0

LFPD(µm)

please consult our sales team

 

Polishing

P/P  Epi-Ready

2″(50.8mm) LT-GaAs (Low Temperature-Grown Galium Arsenide) Wafer Specifications

Item Specifications Remarks

Diamater(mm)

Ф 50.8mm ± 1mm

 

Thickness

1-2um or 2-3um

Marco Defect Density

 5 cm-2

 

Resistivity(300K)

>108 Ohm-cm

Carrier

0.5ps

 

Dislocation Density

<1x106cm-2

Useable Surface Area

80%

 

Polishing

Single side polished

Substrate

GaAs Substrate

 

* We also can provide poly crystal GaAs bar, 99.9999%(6N).

Test certificate of GaAs wafer can include below analysis if necessary:

1/Surface roughness of Gallium Arsenide including front side and backside(nanometers).

2/Doping concentration of Gallium Arsenide(cm-3)

3/EPD of Gallium Arsenide(cm-2)

4/Mobility of Gallium Arsendie(V.sec)

5/X-ray diffraction analysis (rocking curves) of Gallium Arsenide: Diffraction reflection curve half-width

6/Low-temperature photoluminescence (emission spectra in the range 0.7-1.0 μm) of Gallium Arsenide: The fraction of exciton photoluminescence in the emission spectrum of the near-IR range at a temperature of 4K or 5 K and an optical excitation density of 1 W / cm2

7/Transmission rate or Absorption coefficient: for instant, we can measure absorption coefficient of single crystal undoped GaAs at 1064nm: <0.6423 cm-1, and this corresponds to a transmission minimum of 33.2% for an exactly 6.5mm thick blank at 1064nm.

 

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