The long-wavelength InGaAsN quantum well laser based on GaAs substrate is one of the most promising development directions. InGaAsN laser structures are usually grown by molecular beam epitaxy (MBE) or metal organic vapor deposition (MOCVD). InGaNAs material is a promising material for long wavelength vertical cavity lasers, which can be...
Highlights •A recessed structure was used on the GaAs/Si solar cells to reduce the current path. •The associated series resistance was reduced by a recessed structure. •The carrier recombination loss was improved due to pyramid-like recessed structure. In this study, epitaxial layers of GaAs-based solar cells were grown on Si substrates using a molecular...
Epitaxial lift-off process enables the separation of III–V device layers from gallium arsenidesubstrates and has been extensively explored to avoid the high cost of III–V devices by reusing the substrates. Conventional epitaxial lift-off processes require several post-processing steps to restore the substrate to an epi-ready condition. Here we present an epitaxial...
Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocation Highlights •High-quality InSb was grown on GaAs by MBE using a “buffer-free” method. •The strain energy is relieved by interfacial misfit dislocations observed by TEM. •The type and separation of dislocations are consistent with theoretical prediction. •InSb film is...
High-power broad-area InGaNAs/GaAs quantum-well (QW) edge-emitting lasers on GaAs substrates in the 1200 nm range are reported. The epitaxial layers of the InGaNAs/GaAs QW laser wafers were grown on n+-GaAs substrates by using metal-organic chemical vapor deposition (MOCVD). The thickness of the InGaNAs/GaAs QW layers is 70 Å/1200 Å. The indium content (x)...