GaAs (Gallium Arsenide) Wafers
PAM-XIAMEN Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and (GaAs)Gallium Arsenide wafer processing technology.
- Description
Product Description
(GaAs) Gallium Arsenide Wafers
PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.
(GaAs)Gallium Arsenide Wafers for LED Applications
| Item | Specifications | Remarks |
|
Conduction Type |
SC/n-type |
SC/p-type with Zn dope Available |
|
Growth Method |
VGF |
|
|
Dopant |
Silicon |
Zn available |
|
Wafer Diamter |
2, 3 & 4 inch |
Ingot or as-cut availalbe |
|
Crystal Orientation |
(100)2°/6°/15° off (110) |
Other misorientation available |
|
OF |
EJ or US |
|
|
Carrier Concentration |
(0.4~2.5)E18/cm3 |
|
|
Resistivity at RT |
(1.5~9)E-3 Ohm.cm |
|
|
Mobility |
1500~3000cm2/V.sec |
|
|
Etch Pit Density |
<5000/cm2 |
|
|
Laser Marking |
upon request |
|
|
Surface Finish |
P/E or P/P |
|
|
Thickness |
220~450um |
|
|
Epitaxy Ready |
Yes |
|
|
Package |
Single wafer container or cassette |
|
(GaAs)Gallium Arsenide Wafers for LD Applications
| Item | Specifications | Remarks |
|
Conduction Type |
SC/n-type |
|
|
Growth Method |
VGF |
|
|
Dopant |
Silicon |
|
|
Wafer Diamter |
2, 3 & 4 inch |
Ingot or as-cut available |
|
Crystal Orientation |
(100)2°/6°/15°off (110) |
Other misorientation available |
|
OF |
EJ or US |
|
|
Carrier Concentration |
(0.4~2.5)E18/cm3 |
|
|
Resistivity at RT |
(1.5~9)E-3 Ohm.cm |
|
|
Mobility |
1500~3000 cm2/V.sec |
|
|
Etch Pit Density |
<500/cm2 |
|
|
Laser Marking |
upon request |
|
|
Surface Finish |
P/E or P/P |
|
|
Thickness |
220~350um |
|
|
Epitaxy Ready |
Yes |
|
|
Package |
Single wafer container or cassette |
|
(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications
| Item | Specifications | Remarks |
|
Conduction Type |
Insulating |
|
|
Growth Method |
VGF |
|
|
Dopant |
Undoped |
|
|
Wafer Diamter |
2, 3 & 4 inch |
Ingot available |
|
Crystal Orientation |
(100)+/- 0.5° |
|
|
OF |
EJ, US or notch |
|
|
Carrier Concentration |
n/a |
|
|
Resistivity at RT |
>1E7 Ohm.cm |
|
|
Mobility |
>5000 cm2/V.sec |
|
|
Etch Pit Density |
<8000 /cm2 |
|
|
Laser Marking |
upon request |
|
|
Surface Finish |
P/P |
|
|
Thickness |
350~675um |
|
|
Epitaxy Ready |
Yes |
|
|
Package |
Single wafer container or cassette |
|
6″ (150mm)(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications
| Item | Specifications | Remarks |
|
Conduction Type |
Semi-insulating |
|
|
Grow Method |
VGF |
|
|
Dopant |
Undoped |
|
|
Type |
N |
|
|
Diamater(mm) |
150±0.25 |
|
|
Orientation |
(100)0°±3.0° |
|
|
NOTCH Orientation |
〔010〕±2° |
|
|
NOTCH Deepth(mm) |
(1-1.25)mm 89°-95° |
|
|
Carrier Concentration |
N/A |
|
|
Resistivity(ohm.cm) |
＞1.0×107 or 0.8-9 x10-3 |
|
|
Mobility(cm2/v.s) |
N/A |
|
|
Dislocation |
N/A |
|
|
Thickness(µm) |
675±25 |
|
|
Edge Exclusion for Bow and Warp(mm) |
N/A |
|
|
Bow(µm) |
N/A |
|
|
Warp(µm) |
≤20.0 |
|
|
TTV(µm) |
≤10.0 |
|
|
TIR(µm) |
≤10.0 |
|
|
LFPD(µm) |
N/A |
|
|
Polishing |
P/P Epi-Ready |
|
2″(50.8mm) LT-GaAs (Low Temperature-Grown Galium Arsenide) Wafer Specifications
| Item | Specifications | Remarks |
|
Diamater(mm) |
Ф 50.8mm ± 1mm |
|
|
Thickness |
1-2um or 2-3um |
|
|
Marco Defect Density |
≤ 5 cm-2 |
|
|
Resistivity(300K) |
>108 Ohm-cm |
|
|
Carrier |
＜0.5ps |
|
|
Dislocation Density |
<1x106cm-2 |
|
|
Useable Surface Area |
≥80% |
|
|
Polishing |
Single side polished |
|
|
Substrate |
GaAs Substrate |
|
(GaAs) Gallium Arsenide Wafers
PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.
(GaAs)Gallium Arsenide Wafers for LED Applications
| Item | Specifications | Remarks |
|
Conduction Type |
SC/n-type |
SC/p-type with Zn dope Available |
|
Growth Method |
VGF |
|
|
Dopant |
Silicon |
Zn available |
|
Wafer Diamter |
2, 3 & 4 inch |
Ingot or as-cut availalbe |
|
Crystal Orientation |
(100)2°/6°/15° off (110) |
Other misorientation available |
|
OF |
EJ or US |
|
|
Carrier Concentration |
(0.4~2.5)E18/cm3 |
|
|
Resistivity at RT |
(1.5~9)E-3 Ohm.cm |
|
|
Mobility |
1500~3000cm2/V.sec |
|
|
Etch Pit Density |
<5000/cm2 |
|
|
Laser Marking |
upon request |
|
|
Surface Finish |
P/E or P/P |
|
|
Thickness |
220~450um |
|
|
Epitaxy Ready |
Yes |
|
|
Package |
Single wafer container or cassette |
|
(GaAs)Gallium Arsenide Wafers for LD Applications
| Item | Specifications | Remarks |
|
Conduction Type |
SC/n-type |
|
|
Growth Method |
VGF |
|
|
Dopant |
Silicon |
|
|
Wafer Diamter |
2, 3 & 4 inch |
Ingot or as-cut available |
|
Crystal Orientation |
(100)2°/6°/15° off (110) |
Other misorientation available |
|
OF |
EJ or US |
|
|
Carrier Concentration |
(0.4~2.5)E18/cm3 |
|
|
Resistivity at RT |
(1.5~9)E-3 Ohm.cm |
|
|
Mobility |
1500~3000 cm2/V.sec |
|
|
Etch Pit Density |
<500/cm2 |
|
|
Laser Marking |
upon request |
|
|
Surface Finish |
P/E or P/P |
|
|
Thickness |
220~350um |
|
|
Epitaxy Ready |
Yes |
|
|
Package |
Single wafer container or cassette |
|
(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications
| Item | Specifications | Remarks |
|
Conduction Type |
Insulating |
|
|
Growth Method |
VGF |
|
|
Dopant |
Undoped |
|
|
Wafer Diamter |
2, 3 & 4 inch |
Ingot available |
|
Crystal Orientation |
(100)+/- 0.5° |
|
|
OF |
EJ, US or notch |
|
|
Carrier Concentration |
n/a |
|
|
Resistivity at RT |
>1E7 Ohm.cm |
|
|
Mobility |
>5000 cm2/V.sec |
|
|
Etch Pit Density |
<8000 /cm2 |
|
|
Laser Marking |
upon request |
|
|
Surface Finish |
P/P |
|
|
Thickness |
350~675um |
|
|
Epitaxy Ready |
Yes |
|
|
Package |
Single wafer container or cassette |
|
6″ (150mm)(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications
| Item | Specifications | Remarks |
|
Conduction Type |
Semi-insulating |
|
|
Grow Method |
VGF |
|
|
Dopant |
Undoped |
|
|
Type |
N |
|
|
Diamater(mm) |
150±0.25 |
|
|
Orientation |
(100)0°±3.0° |
|
|
NOTCH Orientation |
〔010〕±2° |
|
|
NOTCH Deepth(mm) |
(1-1.25)mm 89°-95° |
|
|
Carrier Concentration |
N/A |
|
|
Resistivity(ohm.cm) |
＞1.0×107 or 0.8-9 x10-3 |
|
|
Mobility(cm2/v.s) |
N/A |
|
|
Dislocation |
N/A |
|
|
Thickness(µm) |
675±25 |
|
|
Edge Exclusion for Bow and Warp(mm) |
N/A |
|
|
Bow(µm) |
N/A |
|
|
Warp(µm) |
≤20.0 |
|
|
TTV(µm) |
≤10.0 |
|
|
TIR(µm) |
≤10.0 |
|
|
LFPD(µm) |
N/A |
|
|
Polishing |
P/P Epi-Ready |
|
2″ (50.8mm)LT-GaAs (Low Temperature-Grown Galium Arsenide) Wafer Specifications
| Item | Specifications | Remarks |
|
Diamater(mm) |
Ф 50.8mm ± 1mm |
|
|
Thickness |
1-2um or 2-3um |
|
|
Marco Defect Density |
≤ 5 cm-2 |
|
|
Resistivity(300K) |
>108 Ohm-cm |
|
|
Carrier |
＜0.5ps |
|
|
Dislocation Density |
<1x106cm-2 |
|
|
Useable Surface Area |
≥80% |
|
|
Polishing |
Single side polished |
|
|
Substrate |
GaAs Substrate |
|
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