GaAs Wafer (Gallium Arsenide) Substrate Epi-ready

GaAs (Gallium Arsenide) Wafers

PAM-XIAMEN manufactures Epi-ready GaAs(Gallium Arsenide) Wafer Substrate including semi-conducting n type, semi-conductor undoped and p type with prime grade and dummy grade. The resistivity of GaAs wafer depends on dopants, Si doped or Zn doped is (0.001~0.009) ohm.cm, undoped one is >=1E7 ohm.cm. the orientation of Gallium Arsenide wafer should be (100) and (111), for (100)orientation, it can be 2°/6°/15° off. The EPD of GaAs wafer normally is <5000/cm2 for LED or <500/cm2 for LD or microelectronics.

Category: GaAs Wafer Tags: Gallium Arsenide, Gallium Arsenide lase, Gallium Arsenide semiconductor, Gallium Arsenide solar cell

Description

Product Description

(GaAs) Gallium Arsenide Wafers

PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.

(GaAs)Gallium Arsenide Wafers for LED Applications

Item	Specifications	Remarks
Conduction Type	SC/n-type	SC/p-type with Zn dope Available
Growth Method	VGF
Dopant	Silicon	Zn available
Wafer Diamter	2, 3 & 4 inch	Ingot or as-cut availalbe
Crystal Orientation	(100)2°/6°/15° off (110)	Other misorientation available
OF	EJ or US
Carrier Concentration	(0.4~2.5)E18/cm3
Resistivity at RT	(1.5~9)E-3 Ohm.cm
Mobility	1500~3000cm2/V.sec
Etch Pit Density	<5000/cm2
Laser Marking	upon request
Surface Finish	P/E or P/P
Thickness	220~450um
Epitaxy Ready	Yes
Package	Single wafer container or cassette

(GaAs)Gallium Arsenide Wafers for LD Applications

Item	Specifications	Remarks
Conduction Type	SC/n-type
Growth Method	VGF
Dopant	Silicon
Wafer Diamter	2, 3 & 4 inch	Ingot or as-cut available
Crystal Orientation	(100)2°/6°/15°off (110)	Other misorientation available
OF	EJ or US
Carrier Concentration	(0.4~2.5)E18/cm3
Resistivity at RT	(1.5~9)E-3 Ohm.cm
Mobility	1500~3000 cm2/V.sec
Etch Pit Density	<500/cm2
Laser Marking	upon request
Surface Finish	P/E or P/P
Thickness	220~350um
Epitaxy Ready	Yes
Package	Single wafer container or cassette

(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

Item	Specifications	Remarks
Conduction Type	Insulating
Growth Method	VGF
Dopant	Undoped
Wafer Diamter	2, 3 & 4 inch	Ingot available
Crystal Orientation	(100)+/- 0.5°
OF	EJ, US or notch
Carrier Concentration	n/a
Resistivity at RT	>1E7 Ohm.cm
Mobility	>5000 cm2/V.sec
Etch Pit Density	<8000 /cm2
Laser Marking	upon request
Surface Finish	P/P
Thickness	350~675um
Epitaxy Ready	Yes
Package	Single wafer container or cassette

6″ (150mm)(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

Item	Specifications	Remarks
Conduction Type	Semi-insulating	–
Grow Method	VGF	–
Dopant	Undoped	–
Type	N	–
Diamater(mm)	150±0.25	–
Orientation	(100)0°±3.0°	–
NOTCH Orientation	〔010〕±2°	–
NOTCH Deepth(mm)	(1-1.25)mm 89°-95°	–
Carrier Concentration	please consult our sales team	–
Resistivity(ohm.cm)	＞1.0×107 or 0.8-9 x10-3	–
Mobility(cm2/v.s)	please consult our sales team	–
Dislocation	please consult our sales team	–
Thickness(µm)	675±25	–
Edge Exclusion for Bow and Warp(mm)	please consult our sales team	–
Bow(µm)	please consult our sales team	–
Warp(µm)	≤20.0	–
TTV(µm)	≤10.0	–
TIR(µm)	≤10.0	–
LFPD(µm)	please consult our sales team	–
Polishing	P/P Epi-Ready	–

2″(50.8mm) LT-GaAs (Low Temperature-Grown Galium Arsenide) Wafer Specifications

Item	Specifications
Conduction Type	Semi-insulating
Grow Method	VGF
Dopant	Undoped
Type	N
Diamater(mm)	150±0.25
Orientation	(100)0°±3.0°
NOTCH Orientation	〔010〕±2°
NOTCH Deepth(mm)	(1-1.25)mm 89°-95°
Carrier Concentration	please consult our sales team
Resistivity(ohm.cm)	＞1.0×107 or 0.8-9 x10-3
Mobility(cm2/v.s)	please consult our sales team
Dislocation	please consult our sales team
Thickness(µm)	675±25
Edge Exclusion for Bow and Warp(mm)	please consult our sales team
Bow(µm)	please consult our sales team
Warp(µm)	≤20.0
TTV(µm)	≤10.0
TIR(µm)	≤10.0
LFPD(µm)	please consult our sales team
Polishing	P/P Epi-Ready

* We also can provide poly crystal GaAs bar, 99.9999%(6N).

Test certificate of GaAs wafer can include below analysis if necessary:

1/Surface roughness of Gallium Arsenide including front side and backside(nanometers).

2/Doping concentration of Gallium Arsenide(cm-3)

3/EPD of Gallium Arsenide(cm-2)

4/Mobility of Gallium Arsendie(V.sec)

5/X-ray diffraction analysis (rocking curves) of Gallium Arsenide: Diffraction reflection curve half-width

6/Low-temperature photoluminescence (emission spectra in the range 0.7-1.0 μm) of Gallium Arsenide: The fraction of exciton photoluminescence in the emission spectrum of the near-IR range at a temperature of 4K or 5 K and an optical excitation density of 1 W / cm2

7/Transmission rate or Absorption coefficient: for instant, we can measure absorption coefficient of single crystal undoped GaAs at 1064nm: <0.6423 cm-1, and this corresponds to a transmission minimum of 33.2% for an exactly 6.5mm thick blank at 1064nm.

Gallium Arsenide(GaAs) Wafer with High Mobility

Semi-insulating GaAs substrates 3 inch

Undoped Gallium Arsenide(GaAs) Wafer

Ultra Thin GaAs Wafer

Semi-insulating GaAs Substrate