Tag - sic wafer

Enhanced Crystallinity of Epitaxial Graphene Grown on Hexagonal SiC Surface with Molybdenum Plate Capping

Abstract The crystallinity of epitaxial graphene (EG) grown on a Hexagonal-SiC substrate is found to be enhanced greatly by capping the substrate with a molybdenum plate (Mo-plate) during vacuum annealing. The crystallinity enhancement of EG layer grown with Mo-plate capping is confirmed by the significant change of measured Raman spectra, [...]

Determination of the thickness distribution of a graphene layer grown on a 2″ SiC wafer by means of

Highlights •The thickness of graphene grown on SiC was determined by AES depth profiling. •The AES depth profiling verified the presence of buffer layer on SiC. •The presence of unsaturated Si bonds in the buffer layer has been shown. •Using multipoint analysis thickness distribution of the graphene on the wafer was determined. Auger electron [...]

Silicon Carbide Circuits

Silicon Carbide Circuits on the Way   Although silicon is the semiconducting material of choice in the majority of applications in electronics, its performance is poor where large currents at high voltages have to be controlled. For about 50 years, scientists have been eyeing silicon carbide as a promising alternative in [...]