Tag - inp grenoble

Three-dimensional InP-DHBT on SiGe-BiCMOS integration by means of Benzocyclobutene based wafer bonding for MM-wave circuits

Highlights •Fabrication scheme for heterogenous Si-to-InP circuits on wafer level is described. •Wafer-to-wafer alignment accuracy better than 4–8 μm after bonding obtained. •Interconnects with excellent performance up to 220 GHz demonstrated. •Palladium barrier necessary when combining Al-based technology with gold based one. Abstract In order to benefit from the material properties of both InP-HBT and SiGe-BiCMOS technologies [...]

Gain characteristics and femto-second optical pulse response of 1550 nm-band multi-stacked QD-SOA grown on InP(311)B substrate

Gain characteristics and femto-second optical pulse response of 1550 nm-band multi-stacked QD-SOA grown on InP(311)B substrate In this paper, we demonstrated 155 nm-band multi-stacked QD-SOA grown by the strain-compensation technique on an InP(311)B substrate, and evaluated the fundamental gain characteristics and the femto-second optical pulse response, for the application to ultra-fast [...]