Tag - Gallium arsenide

Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics

Epitaxial lift-off process enables the separation of III–V device layers from gallium arsenidesubstrates and has been extensively explored to avoid the high cost of III–V devices by reusing the substrates. Conventional epitaxial lift-off processes require several post-processing steps to restore the substrate to an epi-ready condition. Here we present an [...]

Coulometric determination of arsenic in gallium arsenide crystal wafers

Coulometric determination of arsenic in gallium arsenide crystal wafersThe determination of small variations in the stoichiometry of undoped, semi-insulating gallium arsenide can be achieved by using constant current coulometry. Samples taken from a wafer are etched in HF, dissolved in NaOH-peroxide solution, then treated with a citric acid buffer. [...]