Tag - GaN

Hybrid Chips of Gallium Nitride and Silicon

Hybrid Chips of Gallium Nitride and Silicon Researchers at MIT say they’ve made a big step toward combining the capabilities of the silicon used in computer chips with properties of the compound semiconductors found in lasers and high-powered electronics. In the October issue of IEEE Electron Device Letters, they report having [...]

Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers

Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layersThick high quality gallium nitride (GaN) layers presenting a dislocation density reduced to 6×106 cm−2were grown by hydride vapour phase epitaxy (HVPE). Scanning electron microscopy (SEM) characterizations, X-ray double diffraction (XRD) measurements, photoluminescence and reflectivity experiments, both at 4.5 K [...]

What is GaN?

GaN(Gallium nitride), which is a compound semiconductor,it is a hard, high melting point materials, the melting point of about 1700 ° C, GaN is a high degree of ionizationof III-Vcompound (0.5 or 0.43). At atmospheric pressure, the GaN crystal is generally hexagonal wurtzite structure. In a cell four atoms, the atomic volume is about halfthat of the GaAs. GaN is Non-Toxic.Basic Parameters for Wurtzite crystal structure at 300K:Breakdown field ~5 x 106 V cm-1Mobility electrons =< 1000 cm2 V-1 s-1Mobility holes =< 200 cm2 V-1 s-1Diffusion coefficient electrons 25 cm2 s-1Diffusion coefficient holes 5 cm2 s-1Diffusion [...]