Epi Wafer for Laser Diode

GaAs based LD epitaxy wafer, which can generate stimulate emission, is widely used for fabricating laser diode since the superior GaAs epitaxial wafer properties make the device a low energy consumption, high efficiency, long lifetime and etc. In addition to gallium arsenide LD epi wafer, commonly used semiconductor materials are cadmium sulfide (CdS), indium phosphide (InP), and zinc sulfide (ZnS).

Category: Epi Wafer for Laser Diode

Description

Product Description

Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), a LD epitaxial wafer supplier, focuses on the GaAs and InP based laser diode epi wafers grown by MOCVD reactors for fiber-optic communication, industrial application, and special-purpose usage. PAM-XIAMEN can offer LD epitaxy wafer based on GaAs substrate for various fields, like VCSEL, infrared, photo-detector and etc. More details about the LD epitaxy wafer material, please refer to the table below:

Substrate Material	Material Capability	Wavelength	Application
GaAs	GaAs/GalnP/AlGaInP/GaInP	635nm
	GaAs Based Epi-wafer	650nm	Vertical Cavity Surface Emitting Laser (VCSEL) RCLED
	GaAs/GalnP/AlGaInP/GaInP	660nm
	GaAs/AlGaAs/GalnP/AlGaAs/GaAs	703nm
	GaAs/GalnP/AlGaInP/GaInP	780nm
	GaAs/GalnP/AlGaInP/GaInP	785nm
	GaAs Based Epi-wafer	800-1064nm	Infrared LD
	GaAs/GalnP/AlGaInP/GaInP	808nm	Infrared LD
	GaAs Based Epi-wafer	850nm	Vertical Cavity Surface Emitting Laser (VCSEL) RCLED
	GaAs Based Epi-wafer	<870nm	Photo-detector
	GaAs Based Epi-wafer	850-1100nm	Vertical Cavity Surface Emitting Laser (VCSEL) RCLED
	GaAs/AlGaAs/GaInAs/AlGaAs/GaAs	905nm
	GaAs/AlGaAs/InGaAs/AlGaAs/GaAs	950nm
	GaAs Based Epi-wafer	980nm	Infrared LD
	InP Based Epi-wafer	1250-1600nm	Avalanche photo-detector
	GaAs Based Epi-wafer	1250-1600nm/>2.0um (InGaAs absorptive layer)	Photo-detector
	GaAs Based Epi-wafer	1250-1600nm/<1.4μm (InGaAsP absorptive layer)	Photo-detector
	InP Based Epi-wafer	1270-1630nm	DFB laser
	GaAsP/GaAs/GaAs substrate	1300nm
	InP Based Epi-wafer	1310nm	FP laser
	GaAsP/GaAs/GaAs substrate	1550nm	FP laser
		1654nm
	InP Based Epi-wafer	1900nm	FP laser
		2004nm

About LD Epitaxy Wafer Applications & Market

The applications of GaAs based LD epitaxy wafer in the laser field can be divided into VCSELs and non-VCSELs. The current GaAs based LD epitaxy applications mainly lies in VCSELs. VCSEL (Vertical Cavity Surface Emitting Laser), based on GaAs materials, is mainly used for face recognition. It is expected to have a high growth rate in the future. EEL (Edge Emitting Laser) is a non-VCSEL device, mainly used in the field of automotive lidar, and the demand is expected to increase with the expansion of the driverless car market.

The GaAs substrate used in the laser field requires high technical indicators, and the unit epitaxial wafer price is significantly higher than that of other fields. The future LD epitaxial market space can be expected. Laser applications are the most sensitive to dislocation density. There is a high requirement for the GaAs substrate materials in laser applications. Therefore, the higher requirement is put forward on LD epitaxial wafer manufacturers and LD epitaxial wafer process. At present, the near-infrared band (760~1060 nm) semiconductor laser based on GaAs substrate has the most mature development and the most widespread application, and it has already been commercialized.

Please see below detail specification of LD epitaxy wafer:

VCSEL Laser Wafer Chip

VCSEL Laser Epi Wafer

703nm laser diode epi wafer

808nm laser diode epi wafer-1

780nm laser diode epi wafer

650nm laser diode epi wafer

785nm laser diode epi wafer

808nm laser diode epi wafers-2

850nm laser diode epi wafer

905nm laser diode epi wafer

950nm laser diode epi wafer

1550nm laser diode epi wafer

1654nm laser diode epi wafer

2004nm laser diode epi wafer

GaAs Epitaxy with Thick Growth

GaAs based Epi Structure MOCVD Grown for Light Emitter

Narrow InGaAsP Quantum Well Grown on InP Wafer

InAs Quantum Dot Layers on InP Substrate

Single Emitter Chips

Single-emitter LD Chip 755nm @8W

Single-emitter LD Chip 808nm @8W

Single-emitter LD Chip 808nm @10W

Single-emitter LD Chip 830nm @2W

Single-emitter LD Chip 880nm @8W

Single-emitter LD Chip 900+nm @10W

Single-emitter LD Chip 900+nm @15W

Single-emitter LD Chip 905nm @25W

Single-emitter LD Chip 1470nm @3W

PAM XIAMEN offers 1470 / 1550nm high power laser single chip as follows:

LD Bare Bar

LD Bare Bar for [email protected] 2.5mm

LD Bare Bar for [email protected] 2mm

LD Bare Bar for [email protected] 1.5mm

LD Bare Bar for [email protected] 2mm

LD Bare Bar for [email protected] 3mm

LD Bare Bar for [email protected] 4mm

LD Bare Bar for [email protected] 2mm

LD Bare Bar for [email protected] 4mm

LD Bare Bar for [email protected] 2mm

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Epi Wafer for Laser Diode

Epi Wafer for Laser Diode

Product Description

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers