Epi Wafer for Laser Diode
- Description
Product Description
Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) focuses on the GaAs and InP based laser diode epi wafers for fiber-optic communication,industrial application,and special-purpose usage in using the MOCVD reactors for epitaxial growth of compound semiconductor material.
| Substrate Material | Material Capability | Wavelength | Application |
| GaAs | GaAs/GalnP/AlGaInP/GaInP | 635nm | |
| GaAs Based Epi-wafer | 650nm | Vertical Cavity Surface Emitting Laser (VCSEL) RCLED |
|
| GaAs/GalnP/AlGaInP/GaInP | 660nm | ||
| GaAs/AlGaAs/GalnP/AlGaAs/GaAs | 703nm | ||
| GaAs/GalnP/AlGaInP/GaInP | 780nm | ||
| GaAs/GalnP/AlGaInP/GaInP | 785nm | ||
| GaAs Based Epi-wafer | 800-1064nm | Infrared LD | |
| GaAs/GalnP/AlGaInP/GaInP | 808nm | Infrared LD | |
| GaAs Based Epi-wafer | 850nm | Vertical Cavity Surface Emitting Laser (VCSEL) RCLED |
|
| GaAs Based Epi-wafer | <870nm | Photo-detector | |
| GaAs Based Epi-wafer | 850-1100nm | Vertical Cavity Surface Emitting Laser (VCSEL) RCLED |
|
| GaAs/AlGaAs/GaInAs/AlGaAs/GaAs | 905nm | ||
| GaAs/AlGaAs/InGaAs/AlGaAs/GaAs | 950nm | ||
| GaAs Based Epi-wafer | 980nm | Infrared LD | |
| InP Based Epi-wafer | 1250-1600nm | Avalanche photo-detector | |
| GaAs Based Epi-wafer | 1250-1600nm/>2.0um (InGaAs absorptive layer) |
Photo-detector | |
| GaAs Based Epi-wafer | 1250-1600nm/<1.4μm (InGaAsP absorptive layer) |
Photo-detector | |
| InP Based Epi-wafer | 1270-1630nm | DFB laser | |
| GaAsP/GaAs/GaAs substrate | 1300nm | ||
| InP Based Epi-wafer | 1310nm | FP laser | |
| GaAsP/GaAs/GaAs substrate | 1550nm | FP laser | |
| 1654nm | |||
| InP Based Epi-wafer | 1900nm | FP laser | |
| 2004nm |
Please see below detail specification of epi wafer for laser diode:
808nm laser diode epi wafers-2
Single Emitter Chips
Single-emitter LD Chip 755nm @8W
Single-emitter LD Chip 808nm @8W
Single-emitter LD Chip 808nm @10W
Single-emitter LD Chip 830nm @2W
Single-emitter LD Chip 880nm @8W
Single-emitter LD Chip 900+nm @10W
Single-emitter LD Chip 900+nm @15W
Single-emitter LD Chip 905nm @25W
Single-emitter LD Chip 1470nm @3W
PAM XIAMEN offers 1470 / 1550nm high power laser single chip as follows:
LD Bare Bar
LD Bare Bar for 780nm@cavity 2.5mm
LD Bare Bar for 808nm@cavity 2mm
LD Bare Bar for 808nm@cavity 1.5mm
LD Bare Bar for 880nm@cavity 2mm
LD Bare Bar for 940nm@cavity 2mm
LD Bare Bar for 940nm@cavity 3mm
LD Bare Bar for 940nm@cavity 4mm
LD Bare Bar for 940nm@cavity 2mm
LD Bare Bar for 976nm@cavity 4mm