GaN Wafer

Gallium Nitride: N type, p type and semi-insulating gallium nitride substrate and template or GaN epi wafer for HEMT with low Marco Defect Density and Dislocation Density for LED, LD or other application.

  • Freestanding GaN substrate

    Freestanding GaN substrate

    PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.

  • GaN Templates

    GaN Templates

    PAM-XIAMEN’s Template Products consist of crystalline layers of (gallium nitride)GaN templates, (aluminum nitride)AlN template,(aluminum gallium nitride) AlGaN templates and (indium gallium nitride) InGaN templates, which are deposited on sapphire
  • GaN based LED Epitaxial Wafer

    GaN based LED Epitaxial Wafer

    PAM-XIAMEN’s GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.

  • GaN HEMT Epitaxial Wafer

    GaN HEMT Epitaxial Wafer

    Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.