Tag - InAlN thin films

Chemical lift-off and direct wafer bonding of GaN/InGaN P–I–N structures grown on ZnO

Highlights •MOCVD growth of a p-GaN/i-InGaN/n-GaN (PIN) solar cell on ZnO/Sapphire templates. •In-depth structural characterizations showing no back-etching of ZnO. •Chemical lift-off and wafer-bonding of the structure on float glass. •Structural characterizations of the device on glass. Abstract p-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal organic vapor phase epitaxy using [...]

Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Highlights •N-polar InAlN thin films were grown on GaN substrates by molecular beam epitaxy. •Surface morphology transitioned from quasi-3D to step-flow at high temperature. •Indium saturation was observed for increasing indium flux at high temperature. •Increased aluminum flux helped increase indium incorporation efficiency. •N-polar InAlN films with 0.19 nm rms roughness were demonstrated. Abstract N-polar InAlN [...]