Wafer List

LN Thin Film on Insulator

Lithium Niobate(LN) Thin Film on Insulator Single crystal Lithium Niobate(LN) films can be integrated on lithium niobate substrate. The structure can be used in electro-optic modulators, optical waveguides, resonators, SAW devices, FRAM memory devices, etc. Single crystal lithium niobate thin films are of great significance for the development of photonic circuits and electronic devices [...]

LNOI with Metal Electrode

Lithium Niobate(LNOI) with Metal Electrode There are metal electrode layers (Au, Pt, Al or other metals) between the SiO2 layer and the LN film. An electric field can be applied on the LN film between the metal electrode layer and the top electrode layer. Based on piezoelectric effect, ferroelectric domain switching effect, [...]

Ultra Flat Wafer Ultra Thin Wafer

Ultra Flat Wafer Ultra Thin Wafer We improve wafer thickness uniformity (TTV) through wafer thinning services and chemical mechanical polishing (CMP) services, which transfer wafers (such as LN, LT, silicon and quartz) to ultra-flat or ultra-thin wafers. We can produce ultra-flat silicon wafers, ultra-flat quartz wafers, ultra-thin LN wafers, ultra-thin LT wafers to meet the [...]

Glass Wafer

Glass Wafer We are one of the world’s leading glass wafer suppliers, provide thin & ultra-thin glass wafers and substrates which are made of different materials, such as Borofloat, Fused Silica & Quartz, BK7, Soda Lime etc for MEMS, fiber optic AWG, LCD panels and OLED substrates application. These wafers are all SEMI Standards including dimensional, flat and notch specifications, also we offer [...]

Single Crystal

Single Crystal CeO2 Crystal Fe3O4 Crystal SnO2 Crystal Cu2O Crystal Fe2O3 Crystal MnO Crystal PrScO3 Crystal Substrate NdScO3 Crystal Substrate NdScO3 Crystal Substrate GdScO3 Crystal Substrate DyScO3 Crystal Substrate SOI Wafer Ti Terminal SrTiO3 HOPG(highly oriented pyrolytic graphite) ZnO/cAl2O3 Film AIN on Sapphire Wafer

Epi/Thin Film on Substrate

Epi/Thin Film on Substrate GaN Substrate/Template SiO2+Si3N4 on Silicon wafer Substrate GaAs/AlGaAs  on GaAs (Si) Substrate SiC 4H Film on  4H-SiC Substrate AlN Thin Film Substrate Aluminum Film Substrate Silicon Nitride on Corning 7980 Substrate La0.7Sr0.3MnO3 + PbZr(x)Ti(1-x)O3 on Nb(SrTiO3) substrate Diamond on Silicon Wafer Substrate Ag Conductive Film(Planarized silver nanowir)substrate FTO Film on Substrates Silicon Nitride on Silicon substrate La0.5Sr0.5TiO3  film substrate Au-coated [...]

Superconductor Substrates

Superconductor Substrates Crystal Structure M.P. Density Thermal Expansion Dielectric constant Growth Tech. & max. size standard 1or 2 sides epi polished wafer oC g/ cm3   LSAT Cubic 1840 6.74 10 22 CZ 20x20x0.5mm (LaAlO3)0.3 -(Sr2AlTaO8)0.7 a=3.868 Å Ø35mm 10x10x0.5mm LaAlO3 Rhombo. 2100 6.51 9.2 24.5 CZ Ø3″x0.5mm a=3.790 Å Ø3″ Ø2″x0.5mm c=13.11 Å   Ø1″x0.5mm     10x10x0.5mm MgO Cubic 2852 3.58 12.8 9.8 Flux Ø2″x0.5mm a=4.21 Å Ø2″ 10x10x0.5mm NdGaO3 Orthor. 1600 7.57 7.8 25 CZ Ø2″x0.5mm a=5.43 Å Ø2″ 10x10x0.5mm b=5.50 Å     c=7.71 Å     SrTiO3 Cubic 2080 5.12 10.4 300 vernuil 10x10x0.5mm a=3.90 Å Ø30mm SrLaAlO4 Tetrag. 1650 16.8 CZ 10x10x0.5mm a=3.756 Å Ø20mm c=12.63 Å   YAlO3 Orthor. 1870 4.88 2 ~ 10 16`20 CZ 10x10x0.5mm a=5.176 Å b=5.307 Å Ø30mm c=7.355 Å   YSZ Cubic ~2500 5.8 10.3 27 Flux Ø2″x0.5mm a=5.125 Å Ø2″ 10x10x0.5m

Substrates for III-V Nitride Film Deposition

Substrates for III-V nitride Film Deposition Crystal Structure M.P. Density Lattice Mis-match to GaN Thermal Expansion Growth Tech. .& Max size Standard substrate size (mm) oC g/cm3 (10-6/k) SiC (6H as example) Hexagonal ~2700 3.21 3.5 % atori. 10.3 CVD Ø2″ x 0.3,Ø3″x0.3 a=3.073  Å     20x20x0.3,15x15x0.3 c=15.117 Å   Ø3“ 10x10x0.3,5x5x0.3   subl.   1 side epi polished Al2O3 Hexagonal 2030 3.97 14% atori. 7.5 CZ Ø50 x 0.33 a=4.758 Å   Ø25 x 0.50 c=12.99 Å Ø2” 10x10x0.5     1 or 2 sides epi polished LiAlO2 Tetragonal 1900 ~ 2.62 1.4 % atori. / CZ 10x10x0.5 a=5.17 Å Ø20 mm 1 or 2 sides epi [...]

Silicon Carbide List

Silicon Carbide List   4″ 4H Silicon Carbide Item No. Type Orientation Thickness   Grade Micropipe Density Surface Usable area    N-Type  S4H-100-N-SIC-350-A 4″ 4H-N 0°/4°±0.5° 350±25um A  <10/cm2 P/P >90% S4H-100-N-SIC-350-B 4″ 4H-N 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85% S4H-100-N-SIC-350-D 4″ 4H-N 0°/4°±0.5° 350±25um D  <100/cm2 P/P >75% S4H-100-N-SIC-370-L 4″ 4H-N 0°/4°±0.5° 370±25um D * L/L >75% S4H-100-N-SIC-440-AC 4″ 4H-N 0°/4°±0.5° 440±25um D * As-cut >75% S4H-100-N-SIC-C0510-AC-D 4″ 4H-N 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut * S4H-100-N-SIC-C1015-AC-C 4″ 4H-N 0°/4°±0.5° 5~10mm C  <50/cm2 As-cut * 3″ 4H Silicon Carbide Item No. Type Orientation Thickness   Grade Micropipe Density Surface Usable area            N-Type  S4H-76-N-SIC-350-A 3″ 4H-N 0°/4°±0.5° 350±25um A  <10/cm2 P/P >90% S4H-76-N-SIC-350-B 3″ 4H-N 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85% S4H-76-N-SIC-350-D 3″ 4H-N 0°/4°±0.5° 350±25um D  <100/cm2 P/P >75% S4H-76-N-SIC-370-L 3″ 4H-N 0°/4°±0.5° 370±25um D * L/L >75% S4H-76-N-SIC-410-AC 3″ 4H-N 0°/4°±0.5° 410±25um D * As-cut >75% S4H-76-N-SIC-C0510-AC-D 3″ 4H-N 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut * S4H-76-N-SIC-C1015-AC-D 3″ 4H-N 0°/4°±0.5° 10~15mm D  <100/cm2 As-cut * S4H-76-N-SIC-C0510-AC-C 3″ 4H-N 0°/4°±0.5° 5~10mm C  <50/cm2 As-cut * S4H-76-N-SIC-C1015-AC-C 3″ 4H-N 0°/4°±0.5° 10~15mm C  <50/cm2 As-cut *   SEMI-INSULATING  S4H-76-SI-SIC-350-A 3″ 4H-SI 0°/4°±0.5° 350±25um A  <10/cm2 P/P >90% S4H-76-SI-SIC-350-B 3″ 4H-SI 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85% S4H-76-SI-SIC-350-D 3″ 4H-SI 0°/4°±0.5° 350±25um D  <100/cm2 P/P >75% 2″ 4H Silicon Carbide Item No. Type Orientation Thickness   Grade Micropipe Density Surface Usable area   N-Type  S4H-51-N-SIC-330-A 2″ 4H-N 0°/4°±0.5° 330±25um A  <10/cm2 C/P >90% S4H-51-N-SIC-330-B 2″ 4H-N 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85% S4H-51-N-SIC-330-D 2″ 4H-N 0°/4°±0.5° 330±25um D  <100/cm2 C/P >75% S4H-51-N-SIC-370-L 2″ 4H-N 0°/4°±0.5° 370±25um D * L/L >75% S4H-51-N-SIC-410-AC 2″ 4H-N 0°/4°±0.5° 410±25um D * As-cut >75% S4H-51-N-SIC-C0510-AC-D 2″ 4H-N 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut * S4H-51-N-SIC-C1015-AC-D 2″ 4H-N 0°/4°±0.5° 10~15mm D  <100/cm2 As-cut * S4H-51-N-SIC-C0510-AC-C 2″ 4H-N 0°/4°±0.5° 5~10mm C  <50/cm2 As-cut * S4H-51-N-SIC-C1015-AC-C 2″ 4H-N 0°/4°±0.5° 10~15mm C  <50/cm2 As-cut * 2″ 6H Silicon Carbide Item No. Type Orientation Thickness   Grade Micropipe Density Surface Usable area   N-Type  S6H-51-N-SIC-330-A 2″ 6H-N 0°/4°±0.5° 330±25um A  <10/cm2 C/P >90% S6H-51-N-SIC-330-B 2″ 6H-N 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85% S6H-51-N-SIC-330-D 2″ 6H-N 0°/4°±0.5° 330±25um D  <100/cm2 C/P >75% S6H-51-N-SIC-370-L 2″ 6H-N 0°/4°±0.5° 370±25um D * L/L >75% S6H-51-N-SIC-410-AC 2″ 6H-N 0°/4°±0.5° 410±25um D * As-cut >75% S6H-51-N-SIC-C0510-AC-D 2″ 6H-N 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut * S6H-51-N-SIC-C1015-AC-D 2″ 6H-N 0°/4°±0.5° 10~15mm D  <100/cm2 As-cut * S6H-51-N-SIC-C0510-AC-C 2″ 6H-N 0°/4°±0.5° 5~10mm C  <50/cm2 As-cut * S6H-51-N-SIC-C1015-AC-C 2″ 6H-N 0°/4°±0.5° 10~15mm C  <50/cm2 As-cut *   SEMI-INSULATING  S6H-51-SI-SIC-330-A 2″ 6H-SI 0°/4°±0.5° 330±25um A  <10/cm2 C/P >90% S6H-51-SI-SIC-330-B 2″ 6H-SI 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85% S6H-51-SI-SIC-330-D 2″ 6H-SI 0°/4°±0.5° 330±25um D  <100/cm2 C/P >75% S6H-51-SI-SIC-370-L 2″ 6H-SI 0°/4°±0.5° 370±25um D * L/L >75% S6H-51-SI-SIC-410-AC 2″ 6H-SI 0°/4°±0.5° 410±25um D * As-cut >75% S6H-51-SI-SIC-C0510-AC-D 2″ 6H-SI 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut * S6H-51-SI-SIC-C1015-AC-D 2″ 6H-SI 0°/4°±0.5° 10~15mm D  <100/cm2 As-cut * Please see below sub-catalogue: 6H n type SiC 4H N Type SiC 4H Semi-insulating SiC SiC Ingots Lapped Wafers Polishing Wafer As a SiC wafer supplier,we offer Silicon carbide list for your reference, if you need price detail, please contact our sales team. Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.  

Nitride Semiconductor Wafer

Nitride Semiconductor Wafer Free-standing Gallium Nitride    Item No. Type Orientation Thickness   Grade Micro Defect Density Surface Usable area              N-Type     PAM-FS-GaN50-N 2″ N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%    PAM-FS-GaN45-N dia.45mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%    PAM-FS-GaN40-N dia.40mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%    PAM-FS-GaN38-N dia.38mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%    PAM-FS-GaN25-N dia.25.4mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%    PAM-FS-GaN15-N 14mm*15mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%    PAM-FS-GaN10-N 10mm*10.5mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%    PAM-FS-GaN5-N 5mm*5.5mm, N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%     SEMI-INSULATING     PAM-FS-GaN50-SI 2″ N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%    PAM-FS-GaN45-SI dia.45mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%    PAM-FS-GaN40-SI dia.40mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%    PAM-FS-GaN38-SI dia.38mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%    PAM-FS-GaN25-SI dia.25.4mm,N [...]