Polished Wafer

Epitaxial Silicon Wafer Epitaxial Silicon Wafer
Etching Wafer Etching Wafer
Polished Wafer

Polished Wafer

FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)

Category: Tags: , , , ,
  • Description

Product Description

Polished wafer

FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)

Our advantages at a glance

1.Advanced epitaxy growth equipment and test equipment.

2.Offer the highest quality with low defect density and good surface roughness.

3.Strong research team support and technology support for our customers

FZ polished wafers Specifications

Type Conduction type Orientation Diameter scope(mm) Resistivity scope(Ω cm) Geometric parameter graininess,surface metal
FZ N&P <100>&<111> 76.2-200 >1000 T≥260（um）              TTV≤2（um）              TIR≤2（um）                      STIR≤1（um）(20*20)                                Graininess≤10pcs(≥0.3um)  ,                                   ≤20pcs(≥0.2um)                    Surface metal≤5E10/cm2 BSD:Etchpit density>1E106pcs/cm2 Poly:5000-12000 A
NTDFZ N <100>&<111> 76.2-200 30-800
CFZ N&P <100>&<111> 76.2-200 1-50
GDFZ N&P <100>&<111> 76.2-200 0.001-300

 

CZ polished wafers Specifications

Type Conduction type Orientation Diameter scope(mm) Resistivity scope(Ω cm) Geometric parameter graininess,surface metal
MCZ N&P <100> <110>&<111> 76.2-200 1-300 T≥260（um）              TTV≤2（um）              TIR≤2（um）                      STIR≤1（um）(20*20)                                Graininess≤10pcs(≥0.3um)  ，                                   ≤20pcs(≥0.2um)                    Surface metal≤5E10/cm2 BSD:Etchpit density>1E106pcs/cm2LTO:3500~8000±250A
CZ N&P <100> <110>&<111> 76.2-200 1-300
MCZ heavily doped N&P  <100>&<111> 76.2-200 0.001-1

You may also like…

  • Freestanding GaN substrate
    Read More
    Quick View

    Freestanding GaN substrate

    PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.

  • SiC (Silicon Carbide) Wafers
    Read More
    Quick View

    SiC Substrate

    PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology.

  • Test Wafer Monitor Wafer Dummy Wafer
    Read More
    Quick View

    Test Wafer Monitor Wafer Dummy Wafer

    PAM-XIAMEN Offers  Dummy Wafer / Test Wafer / Monitor Wafer

  • Epitaxial Silicon Wafer
    Read More
    Quick View

    Epitaxial Silicon Wafer

    Silicon Epitaxial Wafer(Epi Wafer) is a layer of single crystal silicon deposited onto a single crystal silicon wafer(note: it is available to Grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline Silicon wafer,but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial layer)

  • GaAs (Gallium Arsenide) Wafers
    Read More
    Quick View

    GaAs (Gallium Arsenide) Wafers

    PAM-XIAMEN Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and (GaAs)Gallium Arsenide wafer processing technology.

  • Float-Zone Mono-Crystalline Silicon
    Read More
    Quick View

    Float-Zone Mono-Crystalline Silicon

    FZ-Silicon

    The mono-crystalline silicon with the characteristics of low foreign-material content, low defect density and perfect crystal structure is produced with the float-zone process; no foreign material is introduced during the crystal growth. The FZ-Silicon conductivity is usually above 1000 Ω-cm, and the FZ-Silicon is mainly used to produce the high inverse-voltage elements and photoelectronic devices.

  • Cz Mono-Crystalline Silicon
    Read More
    Quick View

    Cz Mono-Crystalline Silicon

    CZ-Silicon

    The heavily/lightly-doped CZ mono-crystalline silicon is suitable for producing various integrated circuits (IC), diodes, triodes, green-energy solar panel. The special elements (such as Ga, Ge) can be added to produce the high-efficiency, radiation-resistant and anti-degenerating solar cell materials for special components.

  • Etching Wafer
    Read More
    Quick View

    Etching Wafer

    The etching wafer has the characteristics of low roughness, good glossiness and relatively low cost, and directly substitutes the polished wafer or epitaxial wafer which has relatively high cost to produce the electronic elements in some fields, to reduce the costs. There are the low-roughness, low-reflectivity and high-reflectivity etching wafers.