Polished Wafer
FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)
- Description
Product Description
FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)
Our advantages at a glance
1.Advanced epitaxy growth equipment and test equipment.
2.Offer the highest quality with low defect density and good surface roughness.
3.Strong research team support and technology support for our customers
FZ polished wafers Specifications
| Type | Conduction type | Orientation | Diameter scope(mm) | Resistivity scope(Ω cm) | Geometric parameter graininess,surface metal |
| FZ | N&P | <100>&<111> | 76.2-200 | >1000 | T≥260（um） TTV≤2（um） TIR≤2（um） STIR≤1（um）(20*20) Graininess≤10pcs(≥0.3um) , ≤20pcs(≥ urface metal≤5E10/cm2 BSD:Etchpit density>1E106pcs/cm2 Poly:5000-12000 A |
| NTDFZ | N | <100>&<111> | 76.2-200 | 30-800 | |
| CFZ | N&P | <100>&<111> | 76.2-200 | 1-50 | |
| GDFZ | N&P | <100>&<111> | 76.2-200 | 0.001-300 |
CZ polished wafers Specifications
| Type | Conduction type | Orientation | Diameter scope(mm) | Resistivity scope(Ω cm) | Geometric parameter graininess,surface metal |
| MCZ | N&P | <100> <110>&<111> | 76.2-200 | 1-300 | T≥260（um） TTV≤2（um） TIR≤2（um） STIR≤1（um）(20*20) Graininess≤10pcs(≥0.3um) ，≤20pcs(≥0.2um) Surface metal≤5E10/cm2 BSD:Etchpit density>1E106pcs/cm2LTO:3500~8000±250A |
| CZ | N&P | <100> <110>&<111> | 76.2-200 | 1-300 | |
| MCZ heavily doped | N&P | <100>&<111> | 76.2-200 | 0.001-1 |
PAM XIAMEN offers MCZ silicon ingot and silicon wafer.PAM XIAMEN offers black lithium Niobate wafers for optics and SAW ComponentsStoichiometric LPCVD Nitride on Silicon Wafers
Zero Diffraction Si Wafer Diameter 32mm for XRD measurements
Silicon Nitride Waveguide – Substrates and Services Provided
Super Low Stress Nitron on Silicon Wafers
Low Stress Nitride Silicon Wafers
Silicon Wafers with (211) Orientation
Silicon Wafers for Soft Lithography
Silicon Wafers PDMS Micro-Fluidic Chip Platforms
Silicon Wafer Thickness:275+- 25µm
Silicon Wafer Thickness:1000μm
2″ silicon wafers Thickness:1000 ±25μm
Si wafer Thickness: 675 ± 25 um
4″ Si wafer Thickness：500±20μm
3″ Si wafer Thickness: 380±20μm
50.8mm (2 Inch) Silicon Wafers-1
50.8mm (2 Inch) Silicon Wafers-2
50.8mm (2 Inch) Silicon Wafers-3
50.8mm (2 Inch) Silicon Wafers-4
50.8mm (2 Inch) Silicon Wafers-5
76.2mm (3 Inch) Silicon Wafers
100mm (4 Inch) Silicon Wafers-1
100mm (4 Inch) Silicon Wafers-2
100mm (4 Inch) Silicon Wafers-3
100mm (4 Inch) Silicon Wafers-4
100mm (4 Inch) Silicon Wafers-5
100mm (4 Inch) Silicon Wafers-6
(100) Oriented Silicon Wafers-1
(100) Oriented Silicon Wafers-2
(100) Oriented Silicon Wafers-3
(100) Oriented Silicon Wafers-4
(100) Oriented Silicon Wafers-5
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