Polished Wafer
PAM-XIAMEN can offer polished wafer, n type or p type with orientation at <100>, <110> or <111>. FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)
- Description
Product Description
Polished wafer
PAM-XIAMEN can offer polished wafer, n type or p type with orientation at <100>, <110> or <111>. More Specifications, please see tables below.
Our advantages at a glance
- Advanced epitaxy growth equipment and test equipment.
- Offer the highest quality with low defect density and good surface roughness.
- Strong research team support and technology support for our customers
1. Specifications of Polished Silicon Wafers
1.1 FZ Polished Wafers Specifications
FZ polished silicon wafer: mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)
| Type | Conduction type | Orientation | Diameter scope(mm) | Resistivity scope(Ω cm) | Geometric parameter graininess,surface metal |
| FZ | N&P | <100>&<111> | 76.2-200 | >1000 | T≥260（um） TTV≤2（um） TIR≤2（um） STIR≤1（um）(20*20) Graininess≤10pcs(≥0.3um) , ≤20pcs(≥ urface metal≤5E10/cm2 BSD:Etchpit density>1E106pcs/cm2 Poly:5000-12000 A |
| NTDFZ | N | <100>&<111> | 76.2-200 | 30-800 | |
| CFZ | N&P | <100>&<111> | 76.2-200 | 1-50 | |
| GDFZ | N&P | <100>&<111> | 76.2-200 | 0.001-300 |
1.2 CZ Polished Wafers Specifications
| Type | Conduction type | Orientation | Diameter scope(mm) | Resistivity scope(Ω cm) | Geometric parameter graininess,surface metal |
| MCZ | N&P | <100> <110>&<111> | 76.2-200 | 1-300 | T≥260（um） TTV≤2（um） TIR≤2（um） STIR≤1（um）(20*20) Graininess≤10pcs(≥0.3um) ，≤20pcs(≥0.2um) Surface metal≤5E10/cm2 BSD:Etchpit density>1E106pcs/cm2LTO:3500~8000±250A |
| CZ | N&P | <100> <110>&<111> | 76.2-200 | 1-300 | |
| MCZ heavily doped | N&P | <100>&<111> | 76.2-200 | 0.001-1 |
2. About Polished Wafer
High-purity electronic grade polysilicon undergoes the steps of crystal pulling, slicing, beveling, lapping, etching, polishing, and cleaning to produce a polished wafer, which meets electrical, surface physical properties, impurity standards and other specifications. Wafers with special processes such as annealing, epitaxy, and SOI are processed based on polished wafers.
Polished wafer (PW) is a silicon chip with atomic flatness that is single side or double sides polished silicon wafer, accounting for about 70% of silicon wafer applications. After the monocrystalline silicon ingot is produced, it is cut into thin slices from the cylindrical monocrystalline silicon of the ingot, which is a wafer of high-purity silicon element. The purpose of polishing is to further remove the residual damage layer on the processed surface. The polished monocrystalline silicon wafer can be directly used to fabricate devices or as an epitaxial substrate material. Polished Si wafer is widely used in digital and analog integrated circuits, memory, power devices and other chips.
PAM XIAMEN offers MCZ silicon ingot and silicon wafer.
PAM XIAMEN offers black lithium Niobate wafers for optics and SAW Components
Stoichiometric LPCVD Nitride on Silicon Wafers
4″ Prime CZ Si wafer with one side sputtering Cr/Au layer thickness 10/50nm
Zero Diffraction Si Wafer Diameter 32mm for XRD measurements
Silicon Nitride Waveguide – Substrates and Services Provided
Super Low Stress Nitron on Silicon Wafers
Low Stress Nitride Silicon Wafers
Silicon Wafers with (211) Orientation
Silicon Wafers for Soft Lithography
Silicon Wafers PDMS Micro-Fluidic Chip Platforms
Silicon Wafer Thickness:275+- 25µm
Silicon Wafer Thickness:1000μm
2″ silicon wafers Thickness:1000 ±25μm
Si wafer Thickness: 675 ± 25 um
4″ Si wafer Thickness：500±20μm
3″ Si wafer Thickness: 380±20μm
50.8mm (2 Inch) Silicon Wafers-1
50.8mm (2 Inch) Silicon Wafers-2
50.8mm (2 Inch) Silicon Wafers-3
50.8mm (2 Inch) Silicon Wafers-4
50.8mm (2 Inch) Silicon Wafers-5
76.2mm (3 Inch) Silicon Wafers
100mm (4 Inch) Silicon Wafers-1
100mm (4 Inch) Silicon Wafers-2
100mm (4 Inch) Silicon Wafers-3
100mm (4 Inch) Silicon Wafers-4
100mm (4 Inch) Silicon Wafers-5
100mm (4 Inch) Silicon Wafers-6
(100) Oriented Silicon Wafers-1
(100) Oriented Silicon Wafers-2
(100) Oriented Silicon Wafers-3
(100) Oriented Silicon Wafers-4
(100) Oriented Silicon Wafers-5
(112) Orientation Silicon Wafers
4″ FZ Intrinsic Silicon Wafer SSP
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GaAs (Gallium Arsenide) Wafers
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Test Wafer Monitor Wafer Dummy Wafer
As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
SiC Wafer Substrate
The company has a complete SiC(silicon carbide) wafer substrate production line integrating crystal growth, crystal processing, wafer processing, polishing, cleaning and testing. Nowadays we supply commercial 4H and 6H SiC wafers with semi insulation and conductivity in on-axis or off-axis, available size:5x5mm2,10x10mm2, 2”,3”,4” and 6”, breaking through key technologies such as defect suppression, seed crystal processing and rapid growth, promoting basic research and development related to silicon carbide epitaxy, devices, etc.
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The etching silicon wafers offered by PAM-XIAMEN are N type or P type etching wafers, which have low roughness, low reflectivity and high reflectivity. The etching wafer has the characteristics of low roughness, good glossiness and relatively low cost, and directly substitutes the polished wafer or epitaxial wafer which has relatively high cost to produce the electronic elements in some fields, reducing the costs.
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