Polished Wafer
FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)
- Description
Product Description
FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)
Our advantages at a glance
1.Advanced epitaxy growth equipment and test equipment.
2.Offer the highest quality with low defect density and good surface roughness.
3.Strong research team support and technology support for our customers
FZ polished wafers Specifications
| Type | Conduction type | Orientation | Diameter scope(mm) | Resistivity scope(Ω cm) | Geometric parameter graininess,surface metal |
| FZ | N&P | <100>&<111> | 76.2-200 | >1000 | T≥260（um） TTV≤2（um） TIR≤2（um） STIR≤1（um）(20*20) Graininess≤10pcs(≥0.3um) , ≤20pcs(≥0.2um) Surface metal≤5E10/cm2 BSD:Etchpit density>1E106pcs/cm2 Poly:5000-12000 A |
| NTDFZ | N | <100>&<111> | 76.2-200 | 30-800 | |
| CFZ | N&P | <100>&<111> | 76.2-200 | 1-50 | |
| GDFZ | N&P | <100>&<111> | 76.2-200 | 0.001-300 |
CZ polished wafers Specifications
| Type | Conduction type | Orientation | Diameter scope(mm) | Resistivity scope(Ω cm) | Geometric parameter graininess,surface metal |
| MCZ | N&P | <100> <110>&<111> | 76.2-200 | 1-300 | T≥260（um） TTV≤2（um） TIR≤2（um） STIR≤1（um）(20*20) Graininess≤10pcs(≥0.3um) ， ≤20pcs(≥0.2um) Surface metal≤5E10/cm2 BSD:Etchpit density>1E106pcs/cm2LTO:3500~8000±250A |
| CZ | N&P | <100> <110>&<111> | 76.2-200 | 1-300 | |
| MCZ heavily doped | N&P | <100>&<111> | 76.2-200 | 0.001-1 |
Stoichiometric LPCVD Nitride on Silicon Wafers
Low Stress Nitride Silicon Wafers
Super Low Stress Nitron on Silicon Wafers
Silicon Nitride Waveguide – Substrates and Services Provided
50.8mm (2 Inch) Silicon Wafers-1
50.8mm (2 Inch) Silicon Wafers-2
50.8mm (2 Inch) Silicon Wafers-3
50.8mm (2 Inch) Silicon Wafers-4
50.8mm (2 Inch) Silicon Wafers-5
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