Who We Are

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on …

Read More...

Why Choose Us

null

Good Sales Service

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.
null

25+ Years Experiences

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.
null

Reliable Quality

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for1
null

Free And Professional Technology Support

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.
After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool.
In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan - CEO Of Xiamen Powerway Advanced Material Co., Ltd

The World’s Most Famous Universities & Companies Trust Us

Partners

Recent News

PAM XIAMEN is comparable to the UK IQE to build Asian VCSEL epitaxial core supply chain

PAM XIAMEN is comparable to the UK IQE to build Asian VCSEL epitaxial core supply chain   Xiamen Powerway focuses on [...]

2019-01-21
GaAs PN Diodes with Heavily Carbon-Doped P-Type GaAs Grown by MOMBE

GaAs pn diodes with heavily carbon-doped p-type GaAs grown by MOMBE were fabricated. The I-V and C-V characteristics were [...]

2019-01-14
From graphene to silicon carbide: ultrathin silicon carbide flakes

This study presents a new ultrathin SiC structure prepared by a catalyst free carbothermal method and post-sonication process. We [...]

2019-01-09
Analysis of the interdigitated back contact solar cells: The n-type substrate lifetime and wafer thickness

The n-type silicon integrated-back contact (IBC) solar cell has attracted much attention due to its high efficiency, whereas its [...]

2019-01-03
Electrical Characterization of GaN p–n Junctions Grown on Freestanding GaN Substrates by Metal–Organic Chemical Vapor Deposition

The electrical characteristics of GaN p–n junctions grown on freestanding GaN substrates by metal–organic chemical vapor deposition were investigated. [...]

2018-12-25
Fabrication of Ge-on-insulator wafers by Smart-CutTM with thermal management for undamaged donor Ge wafers

Newly engineered substrates consisting of semiconductor-on-insulator are gaining much attention as starting materials for the subsequent transfer of semiconductor [...]

2018-12-17
Morphology and Raman scattering spectrum of GaN nanowires embedded in nanochannels of template

The hexagonal wurtzite GaN nanowires embedded in the nanochannels of anodic alumina membrane were achieved by the direct reaction [...]

2018-12-14
Lattice Bending in LEC-Grown Semi-Insulating GaAs Wafers

Lattice bending in LEC-grown semi-insulating GaAs crystal wafers was investigated by X-ray diffraction. Various distributions in the lattice bending [...]

2018-12-04
faqs
Gallium Arsenide wafers, P/P

Q: Please let us know if you could supply below wafer, qty 25/50/300. Gallium Arsenide wafers, P/P 150.00±0.25 mm) 6″Ø×650±25µm, VGF SI undoped GaAs:-[100-2.0°towards[110]]±0.5°, u > 4,000cm²/Vs, Both-sides-polished, 1 Flat 57.5±2.5 mm @ 110±°1, TTV<7µm, BOW<4µm, Warp<10µm, TIR<6µm, Certificate: obligatory, Sealed under nitrogen in single wafer cassette A: Yes, will check the [...]

2018-09-13meta-author
EPD for GaAs Substrate and Epitaxial Wafer

Q: Could you please advise guaranteed EPD for below substrate and epi? Gallium Arsenide wafers, P/E 2″Ø×380±25µm, LEC SI undoped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm, One-side-polished, back-side matte etched, 2 Flats, LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, Carrier lifetime <1ps, Sealed under nitrogen in single wafer cassette. A: Dislocation Density<1×10^6cm-2

2018-09-06meta-author
2″ LT-GaAs Wafer

Q: We would like to buy LT-GaAs, could you please recommend the specs that suit for the application? A: 2″ LT-GaAs Wafer Specification: Diamater(mm)Ф 50.8mm ± 1mm Thickness 1-2um Marco Defect Density≤ 5 cm-2 Resistivity(300K) >10^8 Ohm-cm Carrier lifetime＜1ps or 15ps Dislocation Density<1×10^6cm-2 Useable Surface Area≥80% Polishing:Single side polished Substrate:GaAs substrate

2018-07-25meta-author