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Who We Are

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on …

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Why Choose Us

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Good Sales Service

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.
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25+ Years Experiences

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.
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Reliable Quality

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.
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Free And Professional Technology Support

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.
After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool.
In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan - CEO Of Xiamen Powerway Advanced Material Co., Ltd

The World’s Most Famous Universities & Companies Trust Us

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OSRAM
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Recent News

Study on Diffusion Behavior of Transition Metals in SiC Wafer

PAM-XIAMEN can offer SiC wafers for researches on diffusion behavior of transition metals, additional specifications please refer to https://www.powerwaywafer.com/sic-wafer. Silicon carbide (SiC) [...]

2024-05-15
Effect of Ultraviolet Radiation on Conductivity of AlN

PAM-XIAMEN can provide AlN substrates with various sizes, specifications can be found in https://www.powerwaywafer.com/aln-substrate.html. Aluminum nitride (AlN) has a 6.1eV ultra wide [...]

2024-05-14
Bi/SiC Material System Promising for Quantum Spin Hall Effect

PAM-XIAMEN can offer SiC substrate for quantum spin hall effect researches, specifications please refer to https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html. In quantum spin Hall [...]

2024-05-13
Silicon Carbide (SiC) Spin Quantum Bit Process

SiC wafers can be supplied for studying spin quantum bit, more sepcifications please found in https://www.powerwaywafer.com/sic-wafer. Quantum computers have the [...]

2024-05-11
Optical Observation of Silicon Spin

PAM-XIAMEN is able to provide you with silicon wafers for optical studies, more please refer to https://www.powerwaywafer.com/silicon-wafer. The global quantum [...]

2024-05-10
Study Spin Phonon Interactions in Silicon Carbide by Gaussian Acoustics

PAM-XIAMEN can offer SiC substrate for various researches, additional information can be found in https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html. Hybrid quantum systems can utilize [...]

2024-05-09
Study on Realize Ultra Efficient Laser Power Converter: SiC Based Multijunction Devices

SiC wafers can be offered for laser power converter researches, additional information please refer to https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html. Any questions please [...]

2024-05-08
Research on Quantum Sensing of Nitrogen Vacancy Color Center RF Signal in SiC Material

4H-SiC wafers are available for nitrogen vacancy(NV) color center research. For more wafer information, please contact our sales team: victorchan@powerwaywafer.com 1. [...]

2024-05-07
FAQs
Gallium Arsenide wafers, P/P

Q: Please let us know if you could supply below wafer, qty 25/50/300. Gallium Arsenide wafers, P/P 150.00±0.25 mm) 6″Ø×650±25µm, VGF SI undoped GaAs:-[100-2.0°towards[110]]±0.5°, u > 4,000cm²/Vs, Both-sides-polished, 1 Flat 57.5±2.5 mm @ 110±°1, TTV<7µm, BOW<4µm, Warp<10µm, TIR<6µm, Certificate: obligatory, Sealed under nitrogen in single wafer cassette A: Yes, will check the [...]

2018-09-13meta-author
EPD for GaAs Substrate

PAM-XIAMEN can supply GaAs wafer with EPD less than 5000/cm2. Q: Could you please advise guaranteed EPD for below substrate and epi? Gallium Arsenide wafers, P/E 2″Ø×380±25µm, LEC SI c doped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm, One-side-polished, back-side matte etched, 2 Flats, LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, [...]

2018-09-06meta-author
Gallium Arsenide Wafer, GaAs, VGF, Semi Insulating, Undoped

Q: We would like to ask for below. (001) +/- 0.5o Orientation Semi Insulating, C doped Resistivity ≤ 1 – 10 x 108 Ohm-cm3 EPD ≤ 5000 cm-2 1 Side Polished (Ra < 10Å), EPI Ready, Back Side Etched US Semi Standard Flats, No [...]

2018-07-17meta-author