2009 yr work

Who We Are

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on …

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Why Choose Us

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Good Sales Service

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.
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25+ Years Experiences

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.
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Reliable Quality

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.
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Free And Professional Technology Support

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.
After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool.
In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan - CEO Of Xiamen Powerway Advanced Material Co., Ltd

The World’s Most Famous Universities & Companies Trust Us

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OSRAM
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Recent News

Metal Impurity Content Identified in Mono and Polycrystalline Silicon Crystals

The impurity elements in crystalline silicon materials mainly include non-metallic impurities such as carbon, oxygen, boron, and phosphorus, and [...]

2022-09-27
Electroluminescence Testing of GaAs LED Epitaxial Wafer

With the continuous progress of semiconductor technology, semiconductor devices such as LEDs, photovoltaic cells, semiconductor lasers, etc. have been [...]

2022-09-26
Why Do You Need Gallium Nitride (GaN) Semiconductor Wafers?

PAM-XIAMEN can supply GaN wafers for LD, LED, HEMT and other applications. You can click following links for more [...]

2022-09-26
Silicon Wafer Flatness Measurement – Criterion

PAM-XIAMEN can supply silicon wafers to meet your application demands, more wafer specifications please visit: https://www.powerwaywafer.com/silicon-wafer. The purity, surface flatness, [...]

2022-09-20
4H-SiC Seed Crystal

Due to the advantages of high thermal conductivity, high breakdown field strength, high saturation electron drift rate and high [...]

2022-09-16
Magnetic Czochralski (MCZ) Method

At present, silicon materials still occupy a major position in the field of semiconductors and solar energy. With the [...]

2022-09-15
Non-Contact Optical Measurement for Detecting Film Thickness

For the produced thin film, among its many properties, the thickness and uniformity of the film are the most [...]

2022-09-09
Epitaxial Thin Film of Silicon Carbide (SiC) for Detectors

SiC material has high displacement threshold energy and wide band gap, which enables the detector to work under high [...]

2022-09-06
FAQs
Gallium Arsenide wafers, P/P

Q: Please let us know if you could supply below wafer, qty 25/50/300. Gallium Arsenide wafers, P/P 150.00±0.25 mm) 6″Ø×650±25µm, VGF SI undoped GaAs:-[100-2.0°towards[110]]±0.5°, u > 4,000cm²/Vs, Both-sides-polished, 1 Flat 57.5±2.5 mm @ 110±°1, TTV<7µm, BOW<4µm, Warp<10µm, TIR<6µm, Certificate: obligatory, Sealed under nitrogen in single wafer cassette A: Yes, will check the [...]

2018-09-13meta-author
EPD for GaAs Substrate

PAM-XIAMEN can supply GaAs wafer with EPD less than 5000/cm2. Q: Could you please advise guaranteed EPD for below substrate and epi? Gallium Arsenide wafers, P/E 2″Ø×380±25µm, LEC SI undoped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm, One-side-polished, back-side matte etched, 2 Flats, LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, Carrier [...]

2018-09-06meta-author
Gallium Arsenide Wafer, GaAs, VGF, Semi Insulating, Undoped

Q: We would like to ask for below. (001) +/- 0.5o Orientation Semi Insulating, Undoped Resistivity ≤ 1 – 10 x 108 Ohm-cm3 EPD ≤ 5000 cm-2 1 Side Polished (Ra < 10Å), EPI Ready, Back Side Etched US Semi Standard Flats, No Laser [...]

2018-07-17meta-author