2009 yr work

Who We Are

Originally engaged in physics research, we established Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN). Today, PAM-XIAMEN is a leading manufacturer of compound semiconductor materials in China. PAM-XIAMEN develops advanced crystal growth and epitaxy solutions for compound semiconductors. Our expertise covers GaAs substrate development, III-V epitaxial deposition using Ga/Al/In/As/P materials via MBE or MOCVD, and next-generation SiC/GaN technologies…

Why Choose Us

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Good Sales Service

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.
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25+ Years Experiences

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.
Crystal Structure of Nitrides

Reliable Quality

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.
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Free And Professional Technology Support

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

 

After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool.
In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan - CEO Of Xiamen Powerway Advanced Material Co., Ltd

The World’s Most Famous Universities & Companies Trust Us

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Recent News

SOI Wafer

In the evolution of contemporary semiconductor technology, Silicon on Insulator (SOI) has transformed from a specialized technique into a critical...

4H-SiC Substrate Etch Morphology Control +

PAM-XIAMEN offers low defect 4H‑SiC substrates in the following specifications for universities and research institutes. For inquiries, please contact us at [email protected] Parameter Specification...

MOS vs SBD Grade SiC Substrate

Silicon carbide (SiC), as a representative third-generation semiconductor material, offers exceptional properties including a wide bandgap (3.26eV for 4H-SiC), high...

Electrical Characterization of GaN on SiC HEMT Wafer

In frontier research on RF and power electronic devices, the intrinsic electrical parameters of epitaxial wafers—particularly the transport properties of...

Tailoring 4H-SiC Schottky Barrier Height (SBH) with Ar+ Bombardment +

PAM‑XIAMEN supplies high‑quality epitaxial wafers for 4H‑SiC Schottky barrier diode fabrication. For customized epiwafer solutions, please contact: [email protected] In the development...

SiC Surface Metal Detection & Cleaning

For SiC device manufacturers, surface metal control is the difference between high yield and field failure. As SiC fabrication lines increasingly...

Vertical GaN Homoepitaxial Wafers for Power Devices

Wide-bandgap semiconductors, exemplified by gallium nitride (GaN), have become the core material for next-generation power electronic systems due to their...

GaN Red Light Emitting Diode (LED) Epiwafer

With the advent of the intelligent era, display technology plays an increasingly vital role in daily life. Advantages such as...

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