2009 yr work

Who We Are

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on …

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Why Choose Us

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Good Sales Service

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.
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25+ Years Experiences

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.
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Reliable Quality

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.
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Free And Professional Technology Support

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.
After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool.
In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan - CEO Of Xiamen Powerway Advanced Material Co., Ltd

The World’s Most Famous Universities & Companies Trust Us

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FRAUNHOFER
SHARP
SBIR STTR
OSRAM
POWER INTEGRATIONS
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Recent News

Metallized Diamond Heat Sink

PAM-XIAMEN can offer metallized diamond heat sink for solving the poor bonding force between diamond and the matrix and [...]

2021-06-11
What Is A Gallium Nitride Fast Charger?

Since more and more mobile phone manufacturers launch the gallium nitride fast charger, what is a GaN fast charger? [...]

2021-06-11
Silicon Epitaxy Growth with Boron Dopant by VPE

Silicon epitaxy with Boron dopant in size 200mm from PAM-XIAMEN is available for semiconductor device fabrication. Silicon epitaxy growth is [...]

2021-06-08
4 Inch SiC Epi Wafer

As one of leading SiC epi wafer suppliers, PAM-XIAMEN offers SiC epi wafer, and the SiC epi wafers type [...]

2021-05-17
4H SiC Epitaxial Wafers

PAM-XIAMEN, a leading SiC epitaxial wafer manufacturer, can offer 4H SiC epitaxial wafers, which refer to a single crystal [...]

2021-05-17
What Are Semiconductors？

Most of today’s electronic products, such as computers, mobile phones, or digital tape recorders, have a very close connection [...]

2021-05-07
5G Semiconductor Manufacturers

As one of 5G semiconductor manufacturers, Xiamen Powerway Advanced Material Co., Ltd. can offer compound semiconductor materials with unique [...]

2021-05-06
A Super Heat Dissipation Material–Diamond Material

Today, among the existing semiconductor materials, diamond is one of the most promising semiconductor materials. Usually, it is used as [...]

2021-04-30
FAQs
Gallium Arsenide wafers, P/P

Q: Please let us know if you could supply below wafer, qty 25/50/300. Gallium Arsenide wafers, P/P 150.00±0.25 mm) 6″Ø×650±25µm, VGF SI undoped GaAs:-[100-2.0°towards[110]]±0.5°, u > 4,000cm²/Vs, Both-sides-polished, 1 Flat 57.5±2.5 mm @ 110±°1, TTV<7µm, BOW<4µm, Warp<10µm, TIR<6µm, Certificate: obligatory, Sealed under nitrogen in single wafer cassette A: Yes, will check the [...]

2018-09-13meta-author
EPD for GaAs Substrate and Epitaxial Wafer

Q: Could you please advise guaranteed EPD for below substrate and epi? Gallium Arsenide wafers, P/E 2″Ø×380±25µm, LEC SI undoped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm, One-side-polished, back-side matte etched, 2 Flats, LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, Carrier lifetime <1ps, Sealed under nitrogen in single wafer cassette. A: Dislocation Density<1×10^6cm-2

2018-09-06meta-author
2″ LT-GaAs Wafer

Q: We would like to buy LT-GaAs, could you please recommend the specs that suit for the application? A: 2″ LT-GaAs Wafer Specification: Diamater(mm)Ф 50.8mm ± 1mm Thickness 1-2um Marco Defect Density≤ 5 cm-2 Resistivity(300K) >10^8 Ohm-cm Carrier lifetime＜1ps or 15ps Dislocation Density<1×10^6cm-2 Useable Surface Area≥80% Polishing:Single side polished Substrate:GaAs substrate

2018-07-25meta-author