Semiconductor wafer,Single Crystal wafer,wafer substrate-XIAMEN POWERWAY

Who We Are

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on …

Why Choose Us

Good Sales Service

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

25+ Years Experiences

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

Reliable Quality

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.

Free And Professional Technology Support

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool.
In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan - CEO Of Xiamen Powerway Advanced Material Co., Ltd

The World’s Most Famous Universities & Companies Trust Us

Recent News

650V GaN FETs Chip for Fast Charge

650V GaN FETs Chip for Fast Charge The PAM65D150DNBI-TS eries 650V,150mΩ gallium nitride(GaN) FETs are normally-on devices.PAM-XIAMEN GaN FETs offer [...]

2020-11-24

What is the Key Parameters of SiC Epitaxial Wafer?

What is the Key Parameters of SiC Epitaxial Wafer? The most basic and key parameters of SiC epitaxial materials are [...]

2020-09-22

Why do We Need Silicon Carbide Epitaxial Wafer?

Why do We Need Silicon Carbide Epitaxial Wafer? Silicon carbide epitaxial wafer is a kind of silicon carbide wafer [...]

2020-09-22

Phonon Properties of SiC Wafer

Phonon Properties of SiC Wafer Nanyang Technological University use our SiC wafer to research Phonon Properties. They research focused on [...]

2020-09-21

Low Temperature Grown InGaAs

Low Temperature Grown InGaAs PAM-XIAMEN offer low temperature grown InGaAs on GaAs Substrate(LT-InGaAs) for InGaAs Photo Conductive antenna substrate for [...]

2020-09-16

980 Single Mode Laser Chip

980 Single Mode Laser Chip (PAM200827-LD) PAM XIAMEN offers 980 Single Mode Laser Chip Powerwaywafer 980 Single mode laser chip property Minimum Typical Maximum Central Wavelength [...]

2020-09-16

(20-2-1) Plane Si-GaN Freestanding GaN Substrate

(20-2-1) Plane Si-GaN Freestanding GaN Substrate PAM-XIAMEN offers (20-2-1) Plane Si-GaN Freestanding GaN Substrate Item PAM-FS-GAN(20-2-1)-SI Dimension 5 x 10 mm2 Thickness 380+/-50um Orientation (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2° Conduction Type Semi-Insulating Resistivity (300K) >106 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine [...]

2020-09-02

(20-2-1) Plane N-GaN Freestanding GaN Substrate

(20-2-1) Plane N-GaN Freestanding GaN Substrate PAM-XIAMEN offers (20-2-1) Plane N-GaN Freestanding GaN Substrate Item PAM-FS-GAN(20-2-1)-N Dimension 5 x 10 mm2 Thickness 380+/-50um Orientation (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type Resistivity (300K) < 0.05 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine [...]