Who We Are

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on …

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Why Choose Us

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Good Sales Service

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.
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25+ Years Experiences

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.
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Reliable Quality

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for1
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Free And Professional Technology Support

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.
After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool.
In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan - CEO Of Xiamen Powerway Advanced Material Co., Ltd

The World’s Most Famous Universities & Companies Trust Us

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Recent News

LED Wafer on Silicon

LED Wafer on Silicon             We offer high performance blue light-emitting diode prototypes that grow 2” gallium (GaN) layers based on LED [...]

2018-08-16
UV LED Wafer

UV LED Wafer             We started to offer UV LED wafers that were grown by our MOCVD range from 365nm to [...]

2018-08-15
AlGaN template structure report

AlGaN template structure report A test report is necessary to show the compliance between custom description and our final wafers [...]

2018-08-14
FWHM and XRD report

FWHM and XRD report A test report is necessary to show the compliance between custom description and our final wafers [...]

2018-08-14
Energy resolution report

Energy resolution report A test report is necessary to show the compliance between custom description and our final wafers data. [...]

2018-08-14
IR Transmittance Report

IR Transmittance Report A test report is necessary to show the compliance between custom description and our final wafers data. [...]

2018-08-14
IV Test Report

IV Test Report A test report is necessary to show the compliance between custom description and our final wafers data. [...]

2018-08-14
Surface Roughness-GaN material-TEST REPORT

Surface Roughness-GaN material-TEST REPORT A test report is necessary to show the compliance between custom description and our final wafers [...]

2018-08-14
faqs
2″ LT-GaAs Wafer

Q: We would like to buy LT-GaAs, could you please recommend the specs that suit for the application? A: 2″ LT-GaAs Wafer Specification: Diamater(mm)Ф 50.8mm ± 1mm Thickness 1-2um Marco Defect Density≤ 5 cm-2 Resistivity(300K) >10^8 Ohm-cm Carrier lifetime＜1ps or 15ps Dislocation Density<1×10^6cm-2 Useable Surface Area≥80% Polishing:Single side polished Substrate:GaAs substrate

2018-07-25meta-author
Gallium Arsenide Wafer, GaAs, VGF, Semi Insulating, Undoped

Q: We would like to ask for below. (001) +/- 0.5o Orientation Semi Insulating, Undoped Resistivity ≤ 1 – 10 x 108 Ohm-cm3 EPD ≤ 5000 cm-2 1 Side Polished (Ra < 10Å), EPI Ready, Back Side Etched US Semi Standard Flats, No Laser [...]

2018-07-17meta-author
One Side Polished Silicon Wafer

Q:We request for the following items 1. Silicon (Si) single crystal wafers, polished on one side N-type, orientation<100>, Resistivity 5E-3 ohm.cm, Thickness: 0.1 to 0.5 mm 2. Silicon (Si) single crystal wafers, polished on one side P-type, orientation <100>, Resistivity 5E-3 ohm.cm, Thickness: 0.1 to 0.5 [...]

2018-06-19meta-author , ,