Who We Are

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on …

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Why Choose Us

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Good Sales Service

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.
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25+ Years Experiences

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.
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Reliable Quality

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.
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Free And Professional Technology Support

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.
After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool.
In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan - CEO Of Xiamen Powerway Advanced Material Co., Ltd

The World’s Most Famous Universities & Companies Trust Us

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Recent News

12″ Dummy Grade Silicon Wafer Thickness 650-700um

PAM XIAMEN offers 12″ Dummy Grade Silicon Wafer Thickness 650-700um. 12” 300mm dummy grade wafers Surface is double side [...]

2019-06-24
12″ Dummy Grade Silicon Wafer Thickness 700-730um

PAM XIAMEN offers 12″ Dummy Grade Silicon Wafer Thickness 700-730um. 12” 300mm dummy grade wafers Surface is double side [...]

2019-06-24
4″ FZ Prime Silicon Wafer

PAM XIAMEN offers 4″ FZ Prime Silicon Wafer. 4”FZ P-type orientation 111 thickness 400±15 Resistivity 15000Ωcm polished side 1 [...]

2019-06-24
4″ CZ Prime Silicon Wafer

PAM XIAMEN offers 4″ CZ Prime Silicon Wafer. 4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = [...]

2019-06-24
8″ CZ Dummy Grade Silicon Wafer

PAM XIAMEN offers 8″ CZ Dummy Grade Silicon Wafer. 8inch (5 pieces) Dummy CZ-Si wafer 8 inch (+/- 0.5 [...]

2019-06-24
Improved InAsP metamorphic layers grown on an InP substrate using underlying InP grown at low temperatures

The use of an InP epitaxial layer grown at low temperatures before the growth of a step-graded InAsP metamorphic [...]

2019-06-17
Carrier Concentration and Thickness Measurements of n-Type GaAs Epitaxial Layer by Cell Voltage in Anodization

The carrier concentration and thickness of n-type GaAs epitaxial layers were obtained by cell voltage measurements in anodization, and [...]

2019-06-13
AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC(0001) Substrates by Molecular Beam Epitaxy

We demonstrate the coherent growth of AlN/GaN short-period superlattice (SPSL) on 6H-SiC(0001) substrates by molecular beam epitaxy. A high-quality [...]

2019-06-04
faqs
Gallium Arsenide wafers, P/P

Q: Please let us know if you could supply below wafer, qty 25/50/300. Gallium Arsenide wafers, P/P 150.00±0.25 mm) 6″Ø×650±25µm, VGF SI undoped GaAs:-[100-2.0°towards[110]]±0.5°, u > 4,000cm²/Vs, Both-sides-polished, 1 Flat 57.5±2.5 mm @ 110±°1, TTV<7µm, BOW<4µm, Warp<10µm, TIR<6µm, Certificate: obligatory, Sealed under nitrogen in single wafer cassette A: Yes, will check the [...]

2018-09-13meta-author
EPD for GaAs Substrate and Epitaxial Wafer

Q: Could you please advise guaranteed EPD for below substrate and epi? Gallium Arsenide wafers, P/E 2″Ø×380±25µm, LEC SI undoped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm, One-side-polished, back-side matte etched, 2 Flats, LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, Carrier lifetime <1ps, Sealed under nitrogen in single wafer cassette. A: Dislocation Density<1×10^6cm-2

2018-09-06meta-author
2″ LT-GaAs Wafer

Q: We would like to buy LT-GaAs, could you please recommend the specs that suit for the application? A: 2″ LT-GaAs Wafer Specification: Diamater(mm)Ф 50.8mm ± 1mm Thickness 1-2um Marco Defect Density≤ 5 cm-2 Resistivity(300K) >10^8 Ohm-cm Carrier lifetime＜1ps or 15ps Dislocation Density<1×10^6cm-2 Useable Surface Area≥80% Polishing:Single side polished Substrate:GaAs substrate

2018-07-25meta-author