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Who We Are

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on …

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Why Choose Us

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Good Sales Service

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.
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25+ Years Experiences

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.
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Reliable Quality

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.
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Free And Professional Technology Support

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.
After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool.
In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan - CEO Of Xiamen Powerway Advanced Material Co., Ltd

The World’s Most Famous Universities & Companies Trust Us

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Recent News

Safety Data Sheet

Safety Data Sheet Product Name: Indium Phosphide Date of Issue: SDS No.: PAM-001 2017/10/15   1.PRODUCT AND COMPANY IDENTIFICATION Product Name: Indium Phosphide Chemical Formula: InP Mol. Wt. [...]

2020-08-04
SiC-On-SiC Epi Wafer For Pin-Diodes

SiC-On-SiC Epi Wafer For Pin-Diodes PAM-XIAMEN offers SiC-on-SiC epi wafer for pin-diodes as follows: pin-diodes structure 1: SiC-on-SiC epi-wafer  PAM060320-SIC p+[Al]: 5 [...]

2020-08-04
Sic Chips

Sic Chips PAM-XIAMEN offer SiC substrate with Ag, Ti or Ni or Au metal layers with small chips: 1.PAM200508-SIC-AU 10×10mm SiC [...]

2020-07-17
Aluminium gallium arsenide epi wafer

Aluminium gallium arsenide epi wafer Aluminium gallium arsenide epi wafer (AlGaAs or AlxGa1−xAs) is a semiconductor wafer material with [...]

2020-07-17
InGaN epi-wafers

InGaN epi-wafers  PAM-XIAMEN offers InGaN epi-wafers  with MQWs as follows: 2-inch GaN epi-wafers – PAM190611-LED Orientation C(0001) 0.2±0.1 grad. to m-axis (right [...]

2020-07-14
Transmittance of Glass Wafer

Transmittance of Glass Wafer Different Glass wafer material has different transmittance. The end user should check their detail application, and [...]

2020-06-18
1470 / 1550nm High Power Laser Single Chip

1470 / 1550nm High Power Laser Single Chip PAM XIAMEN offers 1470 / 1550nm high power laser single chip as [...]

2020-06-17
6″CZ Prime Silicon Wafer-3

PAM XIAMEN offers 6″CZ Prime Silicon Wafer-3 6″ Silicon Wafer CZ, <111>,  thickness 1.0 mm,  p-type  resistivity 1-80ohm.cm,  warp < 50 um,  single side polished For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

2020-06-15
FAQs
Gallium Arsenide wafers, P/P

Q: Please let us know if you could supply below wafer, qty 25/50/300. Gallium Arsenide wafers, P/P 150.00±0.25 mm) 6″Ø×650±25µm, VGF SI undoped GaAs:-[100-2.0°towards[110]]±0.5°, u > 4,000cm²/Vs, Both-sides-polished, 1 Flat 57.5±2.5 mm @ 110±°1, TTV<7µm, BOW<4µm, Warp<10µm, TIR<6µm, Certificate: obligatory, Sealed under nitrogen in single wafer cassette A: Yes, will check the [...]

2018-09-13meta-author
EPD for GaAs Substrate and Epitaxial Wafer

Q: Could you please advise guaranteed EPD for below substrate and epi? Gallium Arsenide wafers, P/E 2″Ø×380±25µm, LEC SI undoped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm, One-side-polished, back-side matte etched, 2 Flats, LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, Carrier lifetime <1ps, Sealed under nitrogen in single wafer cassette. A: Dislocation Density<1×10^6cm-2

2018-09-06meta-author
2″ LT-GaAs Wafer

Q: We would like to buy LT-GaAs, could you please recommend the specs that suit for the application? A: 2″ LT-GaAs Wafer Specification: Diamater(mm)Ф 50.8mm ± 1mm Thickness 1-2um Marco Defect Density≤ 5 cm-2 Resistivity(300K) >10^8 Ohm-cm Carrier lifetime＜1ps or 15ps Dislocation Density<1×10^6cm-2 Useable Surface Area≥80% Polishing:Single side polished Substrate:GaAs substrate

2018-07-25meta-author