2009 yr work

Who We Are

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on …

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Why Choose Us

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Good Sales Service

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.
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25+ Years Experiences

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.
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Reliable Quality

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.
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Free And Professional Technology Support

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.
After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool.
In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan - CEO Of Xiamen Powerway Advanced Material Co., Ltd

The World’s Most Famous Universities & Companies Trust Us

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SHARP
SBIR STTR
OSRAM
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Recent News

Germanium (Ge) Window

Germanium (Ge) window is provided for infrared (IR) transmission. Ge window is not transparent for visible lingt and UV [...]

2021-09-18
InAs Quantum Dot Layers on InP Substrate

The typical structure of InAs quantum dot (QD) layers on InP substrate is available with wavelength of 1.55um for [...]

2021-09-17
GaN on SiC Substrate

GaN template with single side polished and atomic step is available, which is grown on 4H or 6H SiC [...]

2021-09-16
InSb Magnetoresistance (MR) Sensor

Indium antimonide (InSb) thin film magnetoresistor, which is the core sensitive element of magnetoresistance (MR) sensor, is provided from [...]

2021-09-14
Silver Nanopowder

Silver nanopowder for sale is typically by laser evaporation in vacuum or in a small pressure of gas to [...]

2021-09-10
Single Crystal Sapphire Ingot

Sapphire ingot can be offered by PAM-XIAMEN, one of sapphire ingot manufacturers. The chemical composition is alumina and is [...]

2021-09-10
AlScN Template

AlScN (Aluminum Scandium Nitride) thin film on sapphire or silicon substrate can be provided by PAM-XIAMEN for the application [...]

2021-09-10
Prime Grade Semi-insulating Indium Phosphide

Semi-insulating indium phosphide (formula: InP) wafer at prime grade for sale is dark gray crystal with a bandwidth (Eg=1.35 [...]

2021-08-06
FAQs
Gallium Arsenide wafers, P/P

Q: Please let us know if you could supply below wafer, qty 25/50/300. Gallium Arsenide wafers, P/P 150.00±0.25 mm) 6″Ø×650±25µm, VGF SI undoped GaAs:-[100-2.0°towards[110]]±0.5°, u > 4,000cm²/Vs, Both-sides-polished, 1 Flat 57.5±2.5 mm @ 110±°1, TTV<7µm, BOW<4µm, Warp<10µm, TIR<6µm, Certificate: obligatory, Sealed under nitrogen in single wafer cassette A: Yes, will check the [...]

2018-09-13meta-author
EPD for GaAs Substrate and Epitaxial Wafer

Q: Could you please advise guaranteed EPD for below substrate and epi? Gallium Arsenide wafers, P/E 2″Ø×380±25µm, LEC SI undoped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm, One-side-polished, back-side matte etched, 2 Flats, LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, Carrier lifetime <1ps, Sealed under nitrogen in single wafer cassette. A: Dislocation Density<1×10^6cm-2

2018-09-06meta-author
Gallium Arsenide Wafer, GaAs, VGF, Semi Insulating, Undoped

Q: We would like to ask for below. (001) +/- 0.5o Orientation Semi Insulating, Undoped Resistivity ≤ 1 – 10 x 108 Ohm-cm3 EPD ≤ 5000 cm-2 1 Side Polished (Ra < 10Å), EPI Ready, Back Side Etched US Semi Standard Flats, No Laser [...]

2018-07-17meta-author