Who We Are

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on …

Read More...

Why Choose Us

null

Good Sales Service

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.
null

25+ Years Experiences

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.
null

Reliable Quality

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for1
null

Free And Professional Technology Support

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.
After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool.
In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan - CEO Of Xiamen Powerway Advanced Material Co., Ltd

The World’s Most Famous Universities & Companies Trust Us

Partners

Recent News

VCSEL Market Overview

VCSEL Market Overview At present, the world’s major designers include Finsar, Lumentum, Princeton Optronics, Heptagon, IIVI and other companies, which [...]

2018-09-27
Growth Mechanism of GaAs Microdisk Structures by Area-Selective Epitaxy Using Migration-Enhanced Epitaxy

Growth Mechanism of GaAs Microdisk Structures by Area-Selective Epitaxy Using Migration-Enhanced Epitaxy We have carried out area-selective epitaxy of GaAs [...]

2018-09-20
The SiC and GaN power semiconductor market will exceed $10 billion by 2027!

The SiC and GaN power semiconductor market will exceed $10 billion by 2027! Key conclusions: Emerging-market silicon carbide(SiC) and gallium nitride(GaN) [...]

2018-09-13
A Glance of GaAs Wafer Market

A Glance of GaAs Wafer Market According to Mamms Consulting, as one of the most mature compound semiconductors, GaAs is [...]

2018-09-05
Wide Bandgap Technology –Next Generation Power Devices

Wide Bandgap Technology –Next Generation Power Devices The tightening of industry standards and changes in government regulations are key drivers [...]

2018-08-30
Near-band-edge luminescence in heavily doped gallium arsenide

Near-band-edge luminescence in heavily doped gallium arsenide The near-band-edge photoluminescence at 80K of heavily tellurium-doped degenerate liquid-phase-epitaxial gallium arsenide layers [...]

2018-08-28
Blue GaN LD Wafer

Blue GaN LD Wafer We can offer 2” InGaN/GaN quantum well blue LD wafer as follow spec: Item Descriptions Materials Substrate blue laser 440-460nm InGaN 2 inch Sapphire [...]

2018-08-22
Single crystal 6H-SiC MEMS fabrication based on smart-cut technique

Single crystal 6H-SiC MEMS fabrication based on smart-cut technique A new single crystal silicon carbide (SiC) MEMS fabrication process is [...]

2018-08-22
faqs
Gallium Arsenide wafers, P/P

Q: Please let us know if you could supply below wafer, qty 25/50/300. Gallium Arsenide wafers, P/P 150.00±0.25 mm) 6″Ø×650±25µm, VGF SI undoped GaAs:-[100-2.0°towards[110]]±0.5°, u > 4,000cm²/Vs, Both-sides-polished, 1 Flat 57.5±2.5 mm @ 110±°1, TTV<7µm, BOW<4µm, Warp<10µm, TIR<6µm, Certificate: obligatory, Sealed under nitrogen in single wafer cassette A: Yes, will check the [...]

2018-09-13meta-author
EPD for GaAs Substrate and Epitaxial Wafer

Q: Could you please advise guaranteed EPD for below substrate and epi? Gallium Arsenide wafers, P/E 2″Ø×380±25µm, LEC SI undoped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm, One-side-polished, back-side matte etched, 2 Flats, LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, Carrier lifetime <1ps, Sealed under nitrogen in single wafer cassette. A: Dislocation Density<1×10^6cm-2

2018-09-06meta-author
2″ LT-GaAs Wafer

Q: We would like to buy LT-GaAs, could you please recommend the specs that suit for the application? A: 2″ LT-GaAs Wafer Specification: Diamater(mm)Ф 50.8mm ± 1mm Thickness 1-2um Marco Defect Density≤ 5 cm-2 Resistivity(300K) >10^8 Ohm-cm Carrier lifetime＜1ps or 15ps Dislocation Density<1×10^6cm-2 Useable Surface Area≥80% Polishing:Single side polished Substrate:GaAs substrate

2018-07-25meta-author