About us

Who We Are

Emerging from a physics research background, we founded Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN). It is now a leading manufacturer of compound semiconductor materials in China.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, with expertise spanning from GaAs&InP-based compound semiconductors to cutting-edge SiC and GaN materials. Our capabilities include substrate growth and MBE/MOCVD epitaxial deposition of III-V semiconductors (Ga, Al, In, As, P) for optoelectronics and power devices, positioning us as a leader in China’s semiconductor material innovation.

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008 certified and awarded honors from China General Administration of Quality Supervision, Inspection and Quarantine. We have owns and shares four modern factories, which can provide quite a big range of qualified products to meet different needs of our customers.

Semiconductor Wafer technology at Xiamen Powerway(PAM-XIAMEN)

2009 yr work

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Our History

2011 yr work

Stage I

PAM-XIAMEN Silicon Carbide Solutions: We deliver 4H-SiC and 3C-SiC substrates of semi-insulating or conductive type in dummy/research/production grades and homoepitaxial wafers with doping/thickness control (650–1700V), deployed in GaN-on-SiC RF, EV power modules, and extreme-environment sensors.
2009 yr work

Stage II

PAM-XIAMEN Compound Semiconductor Solutions: We develop and manufacture engineered substrates (e.g. GaAs, InP, InAs, InSb, GaSb) and advanced epitaxy for next-gen photonics/RF systems. Our MBE/MOCVD can deliver epitaxial growth services for GaAs/InP-based HEMT & laser structures, Sb-based QCL structures and so on, enabling critical photonic and RF applications.
2007 yr work

Stage III

PAM-XIAMEN GaN Solutions: we deliver HVPE-grown low dislocation density freestanding GaN substrates (2″-4″) and GaN epiwafers on sapphire, silicon, SiC, GaN, enabling for LED, LD, HEMT appllication.