Epitaxial Silicon Wafer

Silicon Epitaxial Wafer(Epi Wafer) is a layer of single crystal silicon deposited onto a single crystal silicon wafer(note: it is available to Grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline Silicon wafer,but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial layer)

  • Description

Product Description

Epitaxial Silicon Wafer

Silicon Epitaxial Wafer(Epi Wafer) is a layer of single crystal silicon deposited onto a single crystal silicon wafer(note: it is available to Grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline Silicon wafer,but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial layer. It also can be used for thin film transistor.

The epitaxial layer can be doped, as it is deposited, to the precise doping concentration while continuing the substrate’s crystalline structure.

Epilayer resistivity: <1 ohm-cm up to 150 ohm-cm

Epilayer thickness: < 1 um up to 150 um

Structure: N/N+, N-/N/N+, N/P/N+, N/N+/P-,  N/P/P+, P/P+, P-/P/P+.

Wafer Application: Digital, Linear, Power, MOS, BiCMOS Devices.

Our advantages at a glance

1.Advanced epitaxy growth equipment and test equipment.

2.Offer the highest quality with low defect density and good surface roughness.

3.Strong research team support and technology support for our customers

 

6″(150mm) Wafer specification:

ItemSpecification
SubstrateSub spec No.
Ingot growth methodCZ
Conductivity typeN
DopantAs
Orientation(100)±0.5°
Resistivity≤0.005Ohm.cm
RRG≤15%
[Oi] Content8~18 ppma
Diameter150±0.2 mm
Primary Flat Length55~60 mm
Primary Flat Location{110}±1°
Secondly Flat Lengthsemi
Secondly Flat Locationsemi
Thickness625±15 um
Backside Characteristics:
1、BSD/Poly-Si(A)1.BSD
2、SIO22.LTO:5000±500 A
3、Edge Exclusion3.EE:?0.6 mm
Laser MarkingNONE
Front surfaceMirror polished
EpiStructureN/N+
DopantPhos
Thickness3±0.2 um
Thk.Uniformity≤5 %
Measurement PositionCenter(1 pt) 10mm from edge(4 pts @90 degrees)
Calculation[Tmax-Tmin]÷[[Tmax+Tmin]X 100%
Resistivity2.5±0.2 Ohm.cm
Res.Uniformity≤5 %
Measurement PositionCenter(1 pt) 10mm from edge(4 pts @90 degrees)
Calculation[Rmax-Rmin]÷[[Rmax+Rmin]X 100%
Stack fault Density≤2(ea/cm2)
HazeNONE
ScratchesNONE
Craters、Orange Peel、NONE
Edge Crown≤1/3 Epi thickness
Slip(mm)Total Length ≤ 1Dia
Foreign MatterNONE
Back Surface ContaminationNONE
Total Point Defects(particle)[email protected]

Silicon Epi Wafers Sale-1

Silicon Epi Wafers Sale-2

6″ Silicon EPI Wafer

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4″ Silicon EPI Wafer-2

4″ Silicon EPI Wafer-3

4″ Silicon EPI Wafer-4

4″ Silicon EPI Wafer-5

4″ Silicon EPI Wafer-6

3″ Silicon EPI Wafer-1

3″ Silicon EPI Wafer-2

3″ Silicon EPI Wafer-3

4″ Epitaxial Silicon Wafer

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