Tag - Silicon Wafer

Silicon full wafer bonding with atomic layer deposited titanium dioxide and aluminum oxide intermediate films

Silicon full wafer bonding with atomic layer deposited titanium dioxide and aluminum oxide intermediate films Silicon-on-insulator (SOI) wafers made by direct wafer bonding are widely used as starting substrates for microelectromechanical systems (MEMS) fabrication. Adding another layer next to the SiO2 SOI, or replacing it with another material, will be a way [...]

Advanced Characterisation of Silicon Wafer Solar Cells

Abstract Advanced characterisation plays an important role for further improvements of the cost effectiveness ($/Wp) of solar cells. This paper presents an overview of advanced characterisation techniques that are presently being used for the analysis of silicon wafer solar cells, either in the laboratory or in the factories. Techniques covered include luminescence imaging, [...]

Imec Engineers Form Faster FinFETs From Compound Semiconductors on Silicon Wafer

Abstract Advanced characterisation plays an important role for further improvements of the cost effectiveness ($/Wp) of solar cells. This paper presents an overview of advanced characterisation techniques that are presently being used for the analysis of silicon wafer solar cells, either in the laboratory or in the factories. Techniques covered include luminescence imaging, [...]

Silicon Wafer

Silicon WaferSi wafer Substrate -SiliconQuantity Material Orientation. Diameter Thickness Polish Resistivity Type Dopant Nc Mobility EPDPCS (mm) (μm) Ω·cm   a/cm3 cm2/Vs /cm21-100 Si N/A 25.4 280 SSP 1-100 P/b N/A N/A N/A1-100 Si N/A 25.4 280 SSP 1-100 P/b (1-200)E16 N/A N/A1-100 Si (100) 25.4 525 N/A <0.005 N/A N/A N/A N/A1-100 Si (100) 25.4 525±25 SSP <0.005 N/A N/A N/A N/A1-100 Si with Oxide layer (100) 25.4 525±25 SSP <0.005 N/A N/A N/A N/A1-100 Si (100) 25.4 350-500 SSP 1~10 N/A N/A N/A N/A1-100 Si (100) 25.4 400±25 P/E <0.05 P/ N/A N/A N/A1-100 Si (100) 50.4 400±25 P/E <0.05 P/ N/A N/A N/A1-100 p-Si with 90 nm SiO2 (100) 50.4 500±25 P/E <0.05 P/ N/A N/A N/A1-100 n-Si with 90 nm SiO2 (100) 50.4 500±25 P/E <0.05 N/ N/A N/A N/A1-100 p-Si with 285 nm SiO2 (100) 50.4 500±25 P/E <0.05 N/ N/A N/A N/A1-100 n-Si with 285 nm SiO2 (100) 50.4 500±25 P/E <0.05 N/ N/A N/A N/A1-100 Si with electrodes (100) 50.8 400 N/A <0.05 N/p 1E14-1E15 N/A N/A1-100 Si (100) 50.8 275 SSP 1~10 N/A N/A N/A N/A1-100 Si (100) 50.8 275±25 SSP 1~10 N/p N/A N/A N/A1-100 Si (111) 50.8 350±15 SSP >10000 N/A N/A N/A N/A1-100 Si (100) 50.8 430±15 SSP 5000-8000 N/A N/A N/A N/A1-100 Si (111) 50.8 410±15 SSP 1~20 N/A N/A N/A N/A1-100 Si (111) 50.8 400-500 SSP >5000 N/A N/A N/A N/A1-100 Si (100) 50.8 525±25 SSP 1~50 N/A N/A N/A N/A1-100 Si (100) 50.8 500±25 SSP 1~10 N  P N/A N/A N/A1-100 Si (100) 50.8 500±25 P/P >700 P/ N/A N/A N/A1-100 Si (100) 76.2 400±25 P/E <0.05 P/ N/A N/A N/A1-100 p-Si with 90 nm SiO2 (100) 76.2 500±25 P/E <0.05 P/ N/A N/A N/A1-100 n-Si with 90 nm SiO2 (100) 76.2 500±25 P/E <0.05 N/ N/A N/A N/A1-100 p-Si with 285 nm SiO2 (100) 76.2 500±25 P/E <0.05 N/ N/A N/A N/A1-100 n-Si with 285 nm SiO2 (100) 76.2 500±25 P/E <0.05 N/ N/A N/A N/A1-100 Si (100) 100 625 SSP >10000 N/A N/A N/A N/A1-100 Si (100) 100 525 SSP N/A N/P N/A N/A N/A1-100 Si (100) 100 320 SSP >2500ohm·cm P/b N/A N/A N/A1-100 Si (100) 100 N/A SSP 10~30 N/p N/A N/A N/A1-100 Si (100) 100 505±25 SSP 0.005-0.20 N/P-doped N/A N/A N/A1-100 Si (100) 100 381 SSP 0.005-0.20 N/P-doped N/A N/A N/A1-100 Si (100) 100 525 DSP 1-100 N/A N/A N/A N/A1-100 Si (100) 100 525 DSP 1-100 N/A N/A N/A N/A1-100 Si (100) 100 625±25 SSP 0.001-0.004 N/A N/A N/A N/A1-100 Si with Oxide layer 3000A (100) 100 675±25 SSP 0.001-0.004 N/A N/A N/A N/A1-100 Si (100) 100 625±25 SSP 0.001-0.004 N/A N/A N/A N/A1-100 Si (100) 100 N/A SSP N/A P/b N/A N/A N/A1-100 Si (100) 100 500±25 SSP 1~25 N/A N/A N/A N/A1-100 Si (100) 100 500 SSP 1~10 P/ N/A N/A N/A1-100 Si (100) 100 500±25 P/E 1-10 N/ N/A N/A N/A1-100 Si (100) 100 500/525±25 P/P 1-10 N/ N/A N/A N/A1-100 Si (100) 100 500/525±25 N/A N/A N/A N/A N/A N/A1-100 Si (100) 100 500±25 P/P >700 P/ N/A N/A N/A1-100 Si (100) 150 675±25 N/A  0.001-0.004 P/b N/A N/A N/A1-100 Si (100) 150 675±25 N/A  0.001-0.004 P/b N/A N/A N/A1-100 Si (100)/(111) 150 550~650 DSP N/A N/A N/A N/A N/A1-100 Si (100)/(111) 150 600-700 SSP <0.5 N/A N/A N/A N/A1-100 Si (111) 150 400±25 DSP <50 N/ N/A N/A N/A1-100 Si (100) 150 545 P/E 1-3 N/ N/A N/A N/A1-100 Si (100) 200 725±25 SSP 1~25 P/ N/A N/A N/AAs a [...]