GaN HEMT epitaxial wafer

Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing

Highlights •The validity of comparing DC and RF HTOL test results is a key issue in reliability testing. •We investigate whether DC and RF self heating, and therefore channel temperature, are equivalent. •For this purpose, an experimentally validated electrothermal model has been developed. •Channel temperature is found to be equivalent during RF and DC...

Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts

Highlights •We fabricated HV AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain electrodes. •We examine impact of temperature on the electrical parameters of fabricated devices. •The use of Schottky drain contacts increase the breakdown voltage from 505 to 900 V. •The SD-HEMTs are characterized by lower increase of Ron with increasing temperature. Abstract In this work we...