InAs wafer

PAM-XIAMEN offers Compound Semiconductor InAs wafer – indium arsenide wafer which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100). In addition, InAs single crystal has high electron mobility and is an ideal material for making Hall devices.

  • Description

Product Description

PAM-XIAMEN offers Compound Semiconductor InAs wafer – indium arsenide wafer which is grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)(100) or (110). In addition, InAs single crystal has high electron mobility and is an ideal material for making Hall devices.

Indium arsenide, InAs, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C and lattice constant of 0.6058nm, and the indidum arsenide crystal structure is a zinc blende structure. Indium arsenide wafer is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Because of the superior indium arsenide properties, indium arsenide thin films are also used for making of diode lasers.

Indium arsenide band gap is a direct transition, which is similar to gallium arsenide, and the forbidden band width is (300K)0.45eV. Indium arsenide is sometimes used together with indium phosphide. Alloyed with gallium arsenide, it forms indium gallium arsenide – a material with band gap dependent on In/Ga ratio, a method principally similar to alloying indium nitridewith gallium nitride to yield indium gallium nitride.

Here is the detail specification:

2″(50.8mm)InAs Wafer Specification

3″(76.2mm)InAs Wafer Specification

4″(100mm)InAs Wafer Specification

2″ InAs Wafer Specification

Item Specifications
Dopant Undoped Stannum Sulphur Zinc
Conduction Type N-type N-type N-type P-type
Wafer Diameter 2″
Wafer Orientation (111)±0.5° , (110)±0.5°
Wafer Thickness 500±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration 5×1016cm-3 (5-20)x1017cm-3 (1-10)x1017cm-3 (1-10)x1017cm-3
Mobility ≥2×104cm2/V.s 7000-20000cm2/V.s 6000-20000cm2/V.s 100-400cm2/V.s
EPD <5×104cm-2 <5×104cm-2 <3×104cm-2 <3×104cm-2
TTV <10um
BOW <10um
WARP <12um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

 

3″ InAs Wafer Specification

Item Specifications
Dopant Undoped Stannum Sulphur Zinc
Conduction Type N-type N-type N-type P-type
Wafer Diameter 3″
Wafer Orientation (111)±0.5° , (110)±0.5°
Wafer Thickness 600±25um
Primary Flat Length 22±2mm
Secondary Flat Length 11±1mm
Carrier Concentration 5×1016cm-3 (5-20)x1017cm-3 (1-10)x1017cm-3 (1-10)x1017cm-3
Mobility ≥2×104cm2/V.s 7000-20000cm2/V.s 6000-20000cm2/V.s 100-400cm2/V.s
EPD <5×104cm-2 <5×104cm-2 <3×104cm-2 <3×104cm-2
TTV <12um
BOW <12um
WARP <15um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette


4″ InAs Wafer Specification

Item Specifications
Dopant Undoped Stannum Sulphur Zinc
Conduction Type N-type N-type N-type P-type
Wafer Diameter 4″
Wafer Orientation (111)±0.5° , (110)±0.5°
Wafer Thickness 900±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration 5×1016cm-3 (5-20)x1017cm-3 (1-10)x1017cm-3 (1-10)x1017cm-3
Mobility ≥2×104cm2/V.s 7000-20000cm2/V.s 6000-20000cm2/V.s 100-400cm2/V.s
EPD <5×104cm-2 <5×104cm-2 <3×104cm-2 <3×104cm-2
TTV <15um
BOW <15um
WARP <20um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

 

Stitched Flatness Map of InAs Wafer

 

 

Wafer Spec(example):

1)2”(50.8mm)InAs
Type/Dopant:N/S
Orientation:[111B]±0.5°
Thickness:500±25um
Epi-Ready
SSP

2)2”(50.8mm)InAs
Type/Dopant:N/Undoped
Orientation : (111)B
Thickness:500um±25um
SSP

3)2”(50.8mm)InAs
Type/Dopant:N Un-doped
Orientation : <111>A ±0.5°
Thickness:500um±25um
epi-ready
Ra<=0.5nm
Carrier Concentration(cm-3):1E16~3E16
Mobility(cm -2 ):>20000
EPD(cm -2 ):<15000
SSP

4)2”(50.8mm)InAs
Type/Dopant:N/Undoped
Orientation : <100> with [001]O.F.
Thickness:2mm
AS cut

5)2”(50.8mm)InAs
Type/Dopant:N/P
Orientation :(100),
Carrier Concentration(cm-3):(5-10)E17,
Thickness:500 um
SSP

6)Indium Arsenide wafers,
2″Ø×500±25µm,
p-type InAs:Zn
(110)±0.5°,
Nc=(1-3)E18/cc ,
Both-sides-polished,
Sealed under nitrogen in single wafer cassette.

 

All wafers are offered with high quality epitaxy ready finishing. Surfaces are characterised by in-house, advanced optical metrology techniques which include Surfscan haze and particle monitoring, spectroscopic ellipsometry and grazing incidence interferometry

The influence of annealing temperature on the optical properties of surface electron accumulation layers in n-type (1 0 0) InAs wafers has been investigated by Raman spectroscopy. It exhibits that Raman peaks due to scattering by unscreened LO phonons disappear with increasing temperature, which indicates that the electron accumulation layer in InAs surface is eliminated by annealing. The involved mechanism was analyzed by X-ray photoelectron spectroscopy, X-ray diffraction and high-resolution transmission electron microscopy. The results show that amorphous In2O3 and As2O3 phases are formed at InAs surface during annealing and, meanwhile, a thin crystalline As layer at the interface between the oxidized layer and the wafer is also generated which leads to a decrease in thickness of the surface electron accumulation layer since As adatoms introduce acceptor type surface states.

The emission wavelength of InAs is 3.34μm, and lattice-matched In-GaAsSb, InAsPSb and InAsSb multi-epitaxial materials can be grown on the indium arsenide substrates, which can manufacture lasers and detectors for optical fiber communication in the 2~4μm band.

We also offer InAs wafer epi service, take below as an example:

2”size InAs epi wafer(PAM190730-INAS):
Epi layer: Thikness 0.5 um, InAs epi layer(undoped, n type),
Substrate:2” semi-insulating GaAs

Relative products:
InAs wafer
InSb wafer
InP wafer
GaAs wafer
GaSb wafer
GaP wafer

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