SiC Wafer Substrate

SiC Wafer Substrate

The company has a complete SiC(silicon carbide) wafer substrate production line integrating crystal growth, crystal processing, wafer processing, polishing, cleaning and testing. Nowadays we supply commercial 4H and 6H SiC wafers with semi insulation and conductivity in on-axis or off-axis, available size:5x5mm2,10x10mm2, 2”,3”,4” and 6”,  breaking through key technologies such as defect suppression, seed crystal processing and rapid growth, promoting basic research and development related to silicon carbide epitaxy, devices, etc.

 

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  • Description

Product Description

PAM-XIAMEN offers semiconductor SiC wafer Substrate,6H SiC and 4H SiC (Silicon Carbide) in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device and optoelectronic Devices.  As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab,we are devoted to continuously improve the quality of currently substrates and develop large size substrates.

Here shows detail specification:

1.1 4H SIC,N-TYPE , 6″WAFER SPECIFICATION

SUBSTRATE PROPERTYS4H-150-N-PWAM-350                    S4H-150-N-PWAM-500
DescriptionA/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate
Polytype4H –
Diameter(150 ± 0.5) mm –
Thickness(350 ± 25) μm                               (500 ± 25) μm
Carrier Typen-type –
DopantNitrogen –
Resistivity (RT)(0.015 – 0.028)Ω·cm –
Surface Roughness< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHMA<30 arcsec                   B/C/D <50 arcsec
Micropipe DensityA≤0.5cm-2   B≤2cm-2  C≤15cm-2  D≤50cm-2
TTV<15μm –
Bow< 40μm –
Warp<60μm –
Surface Orientation – –
Off axis4° toward <11-20>± 0.5° –
Primary flat orientation<11-20>±5.0° –
Primary flat length47.50 mm±2.00mm –
Secondary flatNone –
Surface FinishDouble face polished –
PackagingSingle wafer box or multi wafer box –
Cracks by high intensity listNone(A.B)Cumulative length≤20mm,single length≤2mm (C.D)
Hex Plates by high intensity lightCumulative area≤0.05%(A.B)Cumulative area≤0.1%(C.D)
Polytype Areas by high intensity lightNone(A.B)Cumulative area≤3%(C.D)
Visual Carbon InclusionsCumulative area≤0.05%(A.B)Cumulative area≤3%(C.D)
Scratches by high intensity lightNone(A.B)Cumulative length≤1 x wafer diameter (C.D)
Edge chipNone(A.B)5 allowed,≤1mm each (C.D)
Contamination by high intensity lightNone –
Usable area≥ 90 % –
Edge exclusion3mm –

 

1.2 4H SIC,HIGH PURITY SEMI-INSULATING(HPSI), 6″WAFER SPECIFICATION

4H SIC,V DOPED SEMI-INSULATING, 6″WAFER SPECIFICATION

SUBSTRATE PROPERTYS4H-150-SI-PWAM-500 –
DescriptionA/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate
Polytype4H –
Diameter(150 ± 0.5) mm –
Thickness(500 ± 25) μm –
Carrier TypeSemi-insulating –
DopantV doped or undoped –
Resistivity (RT)>1E7 Ω·cm –
Surface Roughness< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHMA<30 arcsec                   B/C/D <50 arcsec
Micropipe DensityA≤1cm-2   B≤5cm-2  C≤30cm-2  D≤50cm-2
TTV<15μm –
Bow< 40μm –
Warp<60μm –
Surface Orientation – –
On axis<0001>± 0.5° –
Off axisNone –
Primary flat orientation<11-20>±5.0° –
Primary flat length47.50 mm±2.00mm –
Secondary flatNone –
Surface FinishDouble face polished –
PackagingSingle wafer box or multi wafer box –
Cracks by high intensity listNone(A.B)Cumulative length≤20mm,single length≤2mm (C.D)
Hex Plates by high intensity lightCumulative area≤0.05%(A.B)Cumulative area≤0.1%(C.D)
Polytype Areas by high intensity lightNone(A.B)Cumulative area≤3%(C.D)
Visual Carbon InclusionsCumulative area≤0.05%(A.B)Cumulative area≤3%(C.D)
Scratches by high intensity lightNone(A.B)Cumulative length≤1 x wafer diameter (C.D)
Edge chipNone(A.B)5 allowed,≤1mm each (C.D)
Contamination by high intensity lightNone –
Usable area≥ 90 % –
Edge exclusion3mm –

 

1.3 4H SIC,N-TYPE , 4″WAFER SPECIFICATION

SUBSTRATE PROPERTYS4H-100-N-PWAM-350               S4H-100-N-PWAM-500
DescriptionA/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate
Polytype4H –
Diameter(100 ± 0.5) mm –
Thickness(350 ± 25) μm                           (500 ± 25) μm
Carrier Typen-type –
DopantNitrogen –
Resistivity (RT)(0.015 – 0.028)Ω·cm –
Surface Roughness< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHMA<30 arcsec                   B/C/D <50 arcsec
Micropipe DensityA≤0.5cm-2   B≤2cm-2  C≤15cm-2  D≤50cm-2
TTV<10μm –
Bow< 25μm –
Warp<45μm –
Surface Orientation – –
On axis<0001>± 0.5° –
Off axis4°or 8° toward <11-20>± 0.5° –
Primary flat orientation<11-20>±5.0° –
Primary flat length32.50 mm±2.00mm –
Secondary flat orientationSi-face:90° cw. from orientation flat ± 5°-
C-face:90° ccw. from orientation flat ± 5°-
Secondary flat length18.00 ± 2.00 mm –
Surface FinishDouble face polished –
PackagingSingle wafer box or multi wafer box –
Cracks by high intensity listNone(A.B)Cumulative length≤10mm,single length≤2mm (C.D)
Hex Plates by high intensity lightCumulative area≤0.05%(A.B)Cumulative area≤0.1%(C.D)
Polytype Areas by high intensity lightNone(A.B)Cumulative area≤3%(C.D)
Visual Carbon InclusionsCumulative area≤0.05%(A.B)Cumulative area≤3%(C.D)
Scratches by high intensity lightNone(A.B)Cumulative length≤1 x wafer diameter (C.D)
Edge chipNone(A.B)5 allowed,≤1mm each (C.D)
Contamination by high intensity lightNone –
Usable area≥ 90 % –
Edge exclusion2mm –

 

1.4 4H SIC,HIGH PURITY SEMI-INSULATING(HPSI), 4″WAFER SPECIFICATION

4H SIC,V DOPED SEMI-INSULATING, 4″WAFER SPECIFICATION

SUBSTRATE PROPERTYS4H-100-SI-PWAM-350               S4H-100-SI-PWAM-500
DescriptionA/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate
Polytype4H –
Diameter(100 ± 0.5) mm –
Thickness(350 ± 25) μm                           (500 ± 25) μm
Carrier TypeSemi-insulating –
DopantV doped or undoped –
Resistivity (RT)>1E7 Ω·cm –
Surface Roughness< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHMA<30 arcsec                   B/C/D <50 arcsec
Micropipe DensityA≤1cm-2   B≤5cm-2  C≤30cm-2  D≤50cm-2
TTV<10μm –
Bow< 25μm –
Warp<45μm –
Surface Orientation – –
On axis<0001>± 0.5° –
Off axisNone –
Primary flat orientation<11-20>±5.0° –
Primary flat length32.50 mm±2.00mm –
Secondary flat orientationSi-face:90° cw. from orientation flat ± 5°-
C-face:90° ccw. from orientation flat ± 5°-
Secondary flat length18.00 ± 2.00 mm –
Surface FinishDouble face polished –
PackagingSingle wafer box or multi wafer box –
Cracks by high intensity listNone(A.B)Cumulative length≤10mm,single length≤2mm (C.D)
Hex Plates by high intensity lightCumulative area≤0.05%(A.B)Cumulative area≤0.1%(C.D)
Polytype Areas by high intensity lightNone(A.B)Cumulative area≤3%(C.D)
Visual Carbon InclusionsCumulative area≤0.05%(A.B)Cumulative area≤3%(C.D)
Scratches by high intensity lightNone(A.B)Cumulative length≤1 x wafer diameter (C.D)
Edge chipNone(A.B)5 allowed,≤1mm each (C.D)
Contamination by high intensity lightNone –
Usable area≥ 90 % –
Edge exclusion2mm –

 

1.5 4H N-TYPE SIC, 3″(76.2mm)WAFER SPECIFICATION

SUBSTRATE PROPERTYS4H-76-N-PWAM-330               S4H-76-N-PWAM-430
DescriptionA/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate
Polytype4H
Diameter(76.2 ± 0.38) mm
Thickness     (350 ± 25) μm                            (430 ± 25) μm
Carrier Typen-type
DopantNitrogen
Resistivity (RT)0.015 – 0.028Ω·cm
Surface Roughness< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHMA<30 arcsec                   B/C/D <50 arcsec
Micropipe DensityA≤0.5cm-2   B≤2cm-2  C≤15cm-2  D≤50cm-2
TTV/Bow /Warp<25μm
Surface Orientation
On axis<0001>± 0.5°
Off axis4°or 8° toward <11-20>± 0.5°
Primary flat orientation<11-20>±5.0°
Primary flat length22.22 mm±3.17mm
0.875″±0.125″
Secondary flat orientationSi-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length11.00 ± 1.70 mm
Surface FinishSingle or double face polished
PackagingSingle wafer box or multi wafer box
ScratchNone
Usable area≥ 90 %
Edge exclusion2mm
Edge chips by diffuse lighting (max)Please consult our engineer team
Cracks by high intensity lightPlease consult our engineer team
Visual carbon Inclusions cumulative areaPlease consult our engineer team
Scratches by high intensity lightPlease consult our engineer team
Contamination by high intensity lightPlease consult our engineer team

 

1.6 4H SEMI-INSULATING SIC, 3″(76.2mm)WAFER SPECIFICATION

(High Purity Semi-Insulating(HPSI) SiC substrate is available)

UBSTRATE PROPERTYS4H-76-N-PWAM-330               S4H-76-N-PWAM-430
DescriptionA/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate
Polytype4H
Diameter(76.2 ± 0.38) mm
Thickness     (350 ± 25) μm                            (430 ± 25) μm
Carrier Typesemi-insulating
DopantV doped or undoped
Resistivity (RT)>1E7 Ω·cm
Surface Roughness< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHMA<30 arcsec                   B/C/D <50 arcsec
Micropipe DensityA≤1cm-2   B≤5cm-2  C≤30cm-2  D≤50cm-2
TTV/Bow /Warp<25μm
Surface Orientation
On axis<0001>± 0.5°
Off axis4°or 8° toward <11-20>± 0.5°
Primary flat orientation<11-20>±5.0°
Primary flat length22.22 mm±3.17mm
0.875″±0.125″
Secondary flat orientationSi-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length11.00 ± 1.70 mm
Surface FinishSingle or double face polished
PackagingSingle wafer box or multi wafer box
ScratchNone
Usable area≥ 90 %
Edge exclusion2mm
Edge chips by diffuse lighting (max)Please consult our engineer team
Cracks by high intensity lightPlease consult our engineer team
Visual carbon Inclusions cumulative areaPlease consult our engineer team
Scratches by high intensity lightPlease consult our engineer team
Contamination by high intensity lightPlease consult our engineer team

 

1.7 4H N-TYPE SIC, 2″(50.8mm)WAFER SPECIFICATION

SUBSTRATE PROPERTYS4H-51-N-PWAM-330              S4H-51-N-PWAM-430
DescriptionA/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate
Polytype4H
Diameter(50.8 ± 0.38) mm
Thickness(250 ± 25) μm                     (330 ± 25) μm                (430 ± 25) μm
Carrier Typen-type
DopantNitrogen
Resistivity (RT)0.012 – 0.0028 Ω·cm
Surface Roughness< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHMA<30 arcsec                   B/C/D <50 arcsec
Micropipe DensityA≤0.5cm-2   B≤2cm-2  C≤15cm-2  D≤50cm-2
Surface Orientation
On axis<0001>± 0.5°
Off axis4°or 8° toward <11-20>± 0.5°
Primary flat orientationParallel {1-100} ± 5°
Primary flat length16.00 ± 1.70) mm
Secondary flat orientationSi-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length8.00 ± 1.70 mm
Surface FinishSingle or double face polished
PackagingSingle wafer box or multi wafer box
Usable area≥ 90 %
Edge exclusion1 mm
Edge chips by diffuse lighting (max)Please consult our engineer team
Cracks by high intensity lightPlease consult our engineer team
Visual carbon Inclusions cumulative areaPlease consult our engineer team
Scratches by high intensity lightPlease consult our engineer team
Contamination by high intensity lightPlease consult our engineer team

 

1.8 4H SEMI-INSULATING SIC, 2″(50.8mm)WAFER SPECIFICATION

(High-Purity Semi-Insulating(HPSI) SiC substrate is available)

SUBSTRATE PROPERTYS4H-51-SI-PWAM-250 S4H-51-SI-PWAM-330 S4H-51-SI-PWAM-430
DescriptionA/B Production Grade  C/D Research Grade  D Dummy Grade  4H SEMI Substrate
Polytype4H
Diameter(50.8 ± 0.38) mm
Thickness(250 ± 25) μm                     (330 ± 25) μm                (430 ± 25) μm
Resistivity (RT)>1E7 Ω·cm
Surface Roughness< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHMA<30 arcsec                   B/C/D <50 arcsec
Micropipe DensityA≤1cm-2   B≤5cm-2  C≤30cm-2  D≤50cm-2
Surface Orientation
On axis                         <0001>± 0.5°
Off axis                         3.5° toward <11-20>± 0.5°
Primary flat orientationParallel {1-100} ± 5°
Primary flat length16.00 ± 1.70 mm
Secondary flat orientation              Si-face:90° cw. from orientation flat ± 5°
                                                   C-face:90° ccw. from orientation flat ± 5°
Secondary flat length8.00 ± 1.70 mm
Surface FinishSingle or double face polished
PackagingSingle wafer box or multi wafer box
Usable area≥ 90 %
Edge exclusion1 mm
Edge chips by diffuse lighting (max)Please consult our engineer team
Cracks by high intensity lightPlease consult our engineer team
Visual carbon Inclusions cumulative areaPlease consult our engineer team
Scratches by high intensity lightPlease consult our engineer team
Contamination by high intensity lightPlease consult our engineer team

 

1.9 6H N-TYPE SIC, 2″(50.8mm)WAFER SPECIFICATION

SUBSTRATE PROPERTYS6H-51-N-PWAM-250 S6H-51-N-PWAM-330 S6H-51-N-PWAM-430
DescriptionA/B Production Grade  C/D Research Grade  D Dummy Grade   6H SiC Substrate
Polytype6H
Diameter(50.8 ± 0.38) mm
Thickness(250 ± 25) μm                  (330 ± 25) μm                  (430 ± 25) μm
Carrier Typen-type
DopantNitrogen
Resistivity (RT)0.02 ~ 0.1 Ω·cm
Surface Roughness< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHMA<30 arcsec                   B/C/D <50 arcsec
Micropipe DensityA≤0.5cm-2   B≤2cm-2  C≤15cm-2  D≤50cm-2
Surface Orientation
On axis<0001>± 0.5°
Off axis3.5° toward <11-20>± 0.5°
Primary flat orientationParallel {1-100} ± 5°
Primary flat length16.00 ± 1.70 mm
Secondary flat orientationSi-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length8.00 ± 1.70 mm
Surface FinishSingle or double face polished
PackagingSingle wafer box or multi wafer box
Usable area≥ 90 %
Edge exclusion1 mm
Edge chips by diffuse lighting (max)Please consult our engineer team
Cracks by high intensity lightPlease consult our engineer team
Visual carbon Inclusions cumulative areaPlease consult our engineer team
Scratches by high intensity lightPlease consult our engineer team
Contamination by high intensity lightPlease consult our engineer team

 

1.10 SiC Seed Crystal Wafer:

ItemSizeTypeOrientationThicknessMPDPolishing Condition
No.1105mm4H, N typeC(0001)4deg.off500+/-50um<=1/cm-2
No.2153mm4H, N typeC(0001)4deg.off350+/-50um<=1/cm-2

 

4H N-type or semi-insulating SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION: Thickness:330μm/430μm

4H N-type or semi-insulating SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION:Thickness:330μm/430μm

a-plane SiC Wafer, size: 40mm*10mm,30mm*10mm,20mm*10mm,10mm*10mm,specs below:

6H/4H N type                   Thickness:330μm/430μm or custom

6H/4H Semi-insulating     Thickness:330μm/430μm or custom

 

1.11 SILICON CARBIDE MATERIAL PROPERTIES

SILICON CARBIDE MATERIAL PROPERTIES  
PolytypeSingle Crystal 4HSingle Crystal 6H
Lattice Parametersa=3.076 Åa=3.073 Å
 c=10.053 Åc=15.117 Å
Stacking SequenceABCBABCACB
Band-gap3.26 eV3.03 eV
Density3.21 · 103 kg/m33.21 · 103 kg/m3
Therm. Expansion Coefficient4-5×10-6/K4-5×10-6/K
Refraction Indexno = 2.719no = 2.707
 ne = 2.777ne = 2.755
Dielectric Constant9.69.66
Thermal Conductivity490 W/mK490 W/mK
Break-Down Electrical Field2-4 · 108 V/m2-4 · 108 V/m
Saturation Drift Velocity2.0 · 105 m/s2.0 · 105 m/s
Electron Mobility800 cm2/V·S400 cm2/V·S
hole Mobility115 cm2/V·S90 cm2/V·S
Mohs Hardness~9~9

 

2.Q&A of SiC Wafer

2.1 What is the barrier of SiC wafer becoming a wide application same as silicon wafer?

1.Due to the physical and chemical stability of SiC, the crystal growth of SiC is extremely difficult, which seriously hinders the development of SiC semiconductor devices and their electronic applications.

2.Since there are many kinds of SiC structures with different stacking sequences (also known as polymorphism) , the growth of electronic grade SiC crystal is hindered. The polymorphs of SiC, such as 3C SiC, 4H SiC and 6h SiC.

 

2.2 What kind of SiC wafer do you offer?

What you need belongs to cubic phase, there are cubic (c), hexagonal (H) and rhombic (R). what we have are hexagonal, such as 4H and 6h, C is cubic, like 3C silicon carbide.

 

3.Please see below sub-catalogue:

4H N Type SiC
4H Semi-insulating SiC
SiC Ingots
Lapped Wafers
Polishing Wafer

100mm Silicon Carbide

6H SiC Wafer

PAM-XIAMEN Offers High Purity Semi-Insulating SiC substrate

4H Semi-insulating SiC

SiC(Silicon Carbide) Boule Crystal

Sic Chips

HPSI SiC Wafer for Graphene Growth

Why do We Need High Purity Semi-insulating SiC Wafer?

Phonon Properties of SiC Wafer

Growth Facet

Why Does SiC Wafer Show Different Color?

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