SiC Wafer Substrate

SiC Wafer Substrate

The company has a complete SiC(silicon carbide) wafer substrate production line integrating crystal growth, crystal processing, wafer processing, polishing, cleaning and testing. Nowadays we supply commercial 4H and 6H SiC wafers with semi insulation and conductivity in on-axis or off-axis, available size:5x5mm2,10x10mm2, 2”,3”,4” and 6”,  breaking through key technologies such as defect suppression, seed crystal processing and rapid growth, promoting basic research and development related to silicon carbide epitaxy, devices, etc.

 

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  • Description

Product Description

PAM-XIAMEN offers semiconductor SiC wafer Substrate,6H SiC and 4H SiC (Silicon Carbide) in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device and optoelectronic Devices.  As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab,we are devoted to continuously improve the quality of currently substrates and develop large size substrates.

Here shows detail specification:

SILICON CARBIDE MATERIAL PROPERTIES

SILICON CARBIDE MATERIAL PROPERTIES    
Polytype Single Crystal 4H Single Crystal 6H
Lattice Parameters a=3.076 Å a=3.073 Å
  c=10.053 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Band-gap 3.26 eV 3.03 eV
Density 3.21 · 103 kg/m3 3.21 · 103 kg/m3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index no = 2.719 no = 2.707
  ne = 2.777 ne = 2.755
Dielectric Constant 9.6 9.66
Thermal Conductivity 490 W/mK 490 W/mK
Break-Down Electrical Field 2-4 · 108 V/m 2-4 · 108 V/m
Saturation Drift Velocity 2.0 · 105 m/s 2.0 · 105 m/s
Electron Mobility 800 cm2/V·S 400 cm2/V·S
hole Mobility 115 cm2/V·S 90 cm2/V·S
Mohs Hardness ~9 ~9

Remark: Thermal conductivity of SiC is not only related to polytype( 6H or 4H), but also to its type,i.e.n type and semi-insulating in thermal conductivity has different values(W/cm.K@298K), as for the details, please consult our engineer team: tech@powerwaywafer.com

6H N-TYPE SIC, 2″(50.8mm)WAFER SPECIFICATION

SUBSTRATE PROPERTY S6H-51-N-PWAM-250 S6H-51-N-PWAM-330 S6H-51-N-PWAM-430
Description A/B Production Grade  C/D Research Grade  D Dummy Grade   6H SiC Substrate
Polytype 6H
Diameter (50.8 ± 0.38) mm
Thickness (250 ± 25) μm                  (330 ± 25) μm                  (430 ± 25) μm
Carrier Type n-type
Dopant Nitrogen
Resistivity (RT) 0.02 ~ 0.1 Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM A<30 arcsec                   B/C/D <50 arcsec
Micropipe Density A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2
Surface Orientation
On axis <0001>± 0.5°
Off axis 3.5° toward <11-20>± 0.5°
Primary flat orientation Parallel {1-100} ± 5°
Primary flat length 16.00 ± 1.70 mm
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length 8.00 ± 1.70 mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Usable area ≥ 90 %
Edge exclusion 1 mm
Edge chips by diffuse lighting (max) Please consult our engineer team
Cracks by high intensity light Please consult our engineer team
Visual carbon Inclusions cumulative area Please consult our engineer team
Scratches by high intensity light Please consult our engineer team
Contamination by high intensity light Please consult our engineer team

4H SEMI-INSULATING SIC, 2″(50.8mm)WAFER SPECIFICATION

(High-Purity Semi-Insulating(HPSI) SiC substrate is available)

SUBSTRATE PROPERTY S4H-51-SI-PWAM-250 S4H-51-SI-PWAM-330 S4H-51-SI-PWAM-430
Description A/B Production Grade  C/D Research Grade  D Dummy Grade  4H SEMI Substrate
Polytype 4H
Diameter (50.8 ± 0.38) mm
Thickness (250 ± 25) μm                     (330 ± 25) μm                (430 ± 25) μm
Resistivity (RT) >1E5 Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM A<30 arcsec                   B/C/D <50 arcsec
Micropipe Density A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2
Surface Orientation
On axis                         <0001>± 0.5°
Off axis                         3.5° toward <11-20>± 0.5°
Primary flat orientation Parallel {1-100} ± 5°
Primary flat length 16.00 ± 1.70 mm
Secondary flat orientation              Si-face:90° cw. from orientation flat ± 5°
                                                   C-face:90° ccw. from orientation flat ± 5°
Secondary flat length 8.00 ± 1.70 mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Usable area ≥ 90 %
Edge exclusion 1 mm
Edge chips by diffuse lighting (max) Please consult our engineer team
Cracks by high intensity light Please consult our engineer team
Visual carbon Inclusions cumulative area Please consult our engineer team
Scratches by high intensity light Please consult our engineer team
Contamination by high intensity light Please consult our engineer team

4H N-type or Semi-insulating SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION : Thickness:330μm/430μm

4H N-type or Semi-insulating SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION: Thickness:330μm/430μm

4H N-TYPE SIC, 2″(50.8mm)WAFER SPECIFICATION

SUBSTRATE PROPERTY S4H-51-N-PWAM-330              S4H-51-N-PWAM-430
Description A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate
Polytype 4H
Diameter (50.8 ± 0.38) mm
Thickness (250 ± 25) μm                     (330 ± 25) μm                (430 ± 25) μm
Carrier Type n-type
Dopant Nitrogen
Resistivity (RT) 0.012 – 0.0028 Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM A<30 arcsec                   B/C/D <50 arcsec
Micropipe Density A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2
Surface Orientation
On axis <0001>± 0.5°
Off axis 4°or 8° toward <11-20>± 0.5°
Primary flat orientation Parallel {1-100} ± 5°
Primary flat length 16.00 ± 1.70) mm
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length 8.00 ± 1.70 mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Usable area ≥ 90 %
Edge exclusion 1 mm
Edge chips by diffuse lighting (max) Please consult our engineer team
Cracks by high intensity light Please consult our engineer team
Visual carbon Inclusions cumulative area Please consult our engineer team
Scratches by high intensity light Please consult our engineer team
Contamination by high intensity light Please consult our engineer team

4H N-TYPE SIC, 3″(76.2mm)WAFER  SPECIFICATION

SUBSTRATE PROPERTY S4H-76-N-PWAM-330               S4H-76-N-PWAM-430
Description A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate
Polytype 4H
Diameter (76.2 ± 0.38) mm
Thickness      (350 ± 25) μm                            (430 ± 25) μm
Carrier Type n-type
Dopant Nitrogen
Resistivity (RT) 0.015 – 0.028Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM A<30 arcsec                   B/C/D <50 arcsec
Micropipe Density A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2
TTV/Bow /Warp <25μm
Surface Orientation
On axis <0001>± 0.5°
Off axis 4°or 8° toward <11-20>± 0.5°
Primary flat orientation <11-20>±5.0°
Primary flat length 22.22 mm±3.17mm
0.875″±0.125″
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length 11.00 ± 1.70 mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Scratch None
Usable area ≥ 90 %
Edge exclusion 2mm
Edge chips by diffuse lighting (max) Please consult our engineer team
Cracks by high intensity light Please consult our engineer team
Visual carbon Inclusions cumulative area Please consult our engineer team
Scratches by high intensity light Please consult our engineer team
Contamination by high intensity light Please consult our engineer team

4H SEMI-INSULATING SIC, 3″(76.2mm)WAFER  SPECIFICATION

(High Purity Semi-Insulating(HPSI) SiC substrate is available)

UBSTRATE PROPERTY S4H-76-N-PWAM-330               S4H-76-N-PWAM-430
Description A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate
Polytype 4H
Diameter (76.2 ± 0.38) mm
Thickness      (350 ± 25) μm                            (430 ± 25) μm
Carrier Type semi-insulating
Dopant V
Resistivity (RT) >1E5 Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM A<30 arcsec                   B/C/D <50 arcsec
Micropipe Density A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2
TTV/Bow /Warp <25μm
Surface Orientation
On axis <0001>± 0.5°
Off axis 4°or 8° toward <11-20>± 0.5°
Primary flat orientation <11-20>±5.0°
Primary flat length 22.22 mm±3.17mm
0.875″±0.125″
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length 11.00 ± 1.70 mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Scratch None
Usable area ≥ 90 %
Edge exclusion 2mm
Edge chips by diffuse lighting (max) Please consult our engineer team
Cracks by high intensity light Please consult our engineer team
Visual carbon Inclusions cumulative area Please consult our engineer team
Scratches by high intensity light Please consult our engineer team
Contamination by high intensity light Please consult our engineer team

SILICON CARBIDE MATERIAL PROPERTIES

Polytype Single Crystal 4H Single Crystal 6H
Lattice Parameters a=3.076 Å a=3.073 Å
c=10.053 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Band-gap 3.26 eV 3.03 eV
Density 3.21 · 103 kg/m3 3.21 · 103 kg/m3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index no = 2.719 no = 2.707
ne = 2.777 ne = 2.755
Dielectric Constant 9.6 9.66
Thermal Conductivity 490 W/mK 490 W/mK
Break-Down Electrical Field 2-4 · 108 V/m 2-4 · 108 V/m
Saturation Drift Velocity 2.0 · 105 m/s 2.0 · 105 m/s
Electron Mobility 800 cm2/V·S 400 cm2/V·S
hole Mobility 115 cm2/V·S 90 cm2/V·S
Mohs Hardness ~9 ~9

4H SIC,N-TYPE , 4″WAFER SPECIFICATION

SUBSTRATE PROPERTY S4H-100-N-PWAM-350               S4H-100-N-PWAM-500
Description A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate
Polytype 4H  –
Diameter (100 ± 0.5) mm  –
Thickness (350 ± 25) μm                           (500 ± 25) μm
Carrier Type n-type  –
Dopant Nitrogen  –
Resistivity (RT) (0.015 – 0.028)Ω·cm  –
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM A<30 arcsec                   B/C/D <50 arcsec
Micropipe Density A≤5cm-2   B≤15cm-2  C≤30cm-2  D≤100cm-2
TTV <10μm  –
Bow < 25μm  –
Warp <45μm  –
Surface Orientation  –  –
On axis <0001>± 0.5°  –
Off axis 4°or 8° toward <11-20>± 0.5°  –
Primary flat orientation <11-20>±5.0°  –
Primary flat length 32.50 mm±2.00mm  –
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°-
C-face:90° ccw. from orientation flat ± 5°-
Secondary flat length 18.00 ± 2.00 mm  –
Surface Finish Double face polished  –
Packaging Single wafer box or multi wafer box  –
Cracks by high intensity list None(A.B) Cumulative length≤10mm,single length≤2mm (C.D)
Hex Plates by high intensity light Cumulative area≤0.05%(A.B) Cumulative area≤0.1%(C.D)
Polytype Areas by high intensity light None(A.B) Cumulative area≤3%(C.D)
Visual Carbon Inclusions Cumulative area≤0.05%(A.B) Cumulative area≤3%(C.D)
Scratches by high intensity light None(A.B) Cumulative length≤1 x wafer diameter (C.D)
Edge chip None(A.B) 5 allowed,≤1mm each (C.D)
Contamination by high intensity light None  –
Usable area ≥ 90 %  –
Edge exclusion 2mm  –

4H SIC,HIGH PURITY SEMI-INSULATING(HPSI), 4″WAFER SPECIFICATION

4H SIC,V DOPED SEMI-INSULATING, 4″WAFER SPECIFICATION

SUBSTRATE PROPERTY S4H-100-SI-PWAM-350               S4H-100-SI-PWAM-500
Description A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate
Polytype 4H  –
Diameter (100 ± 0.5) mm  –
Thickness (350 ± 25) μm                           (500 ± 25) μm
Carrier Type Semi-insulating  –
Dopant V doped or undoped  –
Resistivity (RT) >1E5 Ω·cm  –
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM A<30 arcsec                   B/C/D <50 arcsec
Micropipe Density A≤5cm-2   B≤15cm-2  C≤30cm-2  D≤100cm-2
TTV <10μm  –
Bow < 25μm  –
Warp <45μm  –
Surface Orientation  –  –
On axis <0001>± 0.5°  –
Off axis None  –
Primary flat orientation <11-20>±5.0°  –
Primary flat length 32.50 mm±2.00mm  –
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°-
C-face:90° ccw. from orientation flat ± 5°-
Secondary flat length 18.00 ± 2.00 mm  –
Surface Finish Double face polished  –
Packaging Single wafer box or multi wafer box  –
Cracks by high intensity list None(A.B) Cumulative length≤10mm,single length≤2mm (C.D)
Hex Plates by high intensity light Cumulative area≤0.05%(A.B) Cumulative area≤0.1%(C.D)
Polytype Areas by high intensity light None(A.B) Cumulative area≤3%(C.D)
Visual Carbon Inclusions Cumulative area≤0.05%(A.B) Cumulative area≤3%(C.D)
Scratches by high intensity light None(A.B) Cumulative length≤1 x wafer diameter (C.D)
Edge chip None(A.B) 5 allowed,≤1mm each (C.D)
Contamination by high intensity light None  –
Usable area ≥ 90 %  –
Edge exclusion 2mm  –

4H SIC,N-TYPE , 6″WAFER SPECIFICATION

SUBSTRATE PROPERTY S4H-150-N-PWAM-350                    S4H-150-N-PWAM-500
Description A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate
Polytype 4H  –
Diameter (150 ± 0.5) mm  –
Thickness (350 ± 25) μm                               (500 ± 25) μm
Carrier Type n-type  –
Dopant Nitrogen  –
Resistivity (RT) (0.015 – 0.028)Ω·cm  –
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM A<30 arcsec                   B/C/D <50 arcsec
Micropipe Density A≤5cm-2   B≤10cm-2  C≤30cm-2  D≤100cm-2
TTV <15μm  –
Bow < 40μm  –
Warp <60μm  –
Surface Orientation  –  –
Off axis 4° toward <11-20>± 0.5°  –
Primary flat orientation <11-20>±5.0°  –
Primary flat length 47.50 mm±2.00mm  –
Secondary flat None  –
Surface Finish Double face polished  –
Packaging Single wafer box or multi wafer box  –
Cracks by high intensity list None(A.B) Cumulative length≤20mm,single length≤2mm (C.D)
Hex Plates by high intensity light Cumulative area≤0.05%(A.B) Cumulative area≤0.1%(C.D)
Polytype Areas by high intensity light None(A.B) Cumulative area≤3%(C.D)
Visual Carbon Inclusions Cumulative area≤0.05%(A.B) Cumulative area≤3%(C.D)
Scratches by high intensity light None(A.B) Cumulative length≤1 x wafer diameter (C.D)
Edge chip None(A.B) 5 allowed,≤1mm each (C.D)
Contamination by high intensity light None  –
Usable area ≥ 90 %  –
Edge exclusion 3mm  –

4H SIC,HIGH PURITY SEMI-INSULATING(HPSI), 6″WAFER SPECIFICATION

4H SIC,V DOPED SEMI-INSULATING, 6″WAFER  SPECIFICATION

SUBSTRATE PROPERTY S4H-150-SI-PWAM-500  –
Description A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate
Polytype 4H  –
Diameter (150 ± 0.5) mm  –
Thickness (500 ± 25) μm  –
Carrier Type Semi-insulating  –
Dopant V doped or undoped  –
Resistivity (RT) >1E5 Ω·cm  –
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM A<30 arcsec                   B/C/D <50 arcsec
Micropipe Density A≤5cm-2   B≤10cm-2  C≤30cm-2  D≤100cm-2
TTV <15μm  –
Bow < 40μm  –
Warp <60μm  –
Surface Orientation  –  –
On axis <0001>± 0.5°  –
Off axis None  –
Primary flat orientation <11-20>±5.0°  –
Primary flat length 47.50 mm±2.00mm  –
Secondary flat None  –
Surface Finish Double face polished  –
Packaging Single wafer box or multi wafer box  –
Cracks by high intensity list None(A.B) Cumulative length≤20mm,single length≤2mm (C.D)
Hex Plates by high intensity light Cumulative area≤0.05%(A.B) Cumulative area≤0.1%(C.D)
Polytype Areas by high intensity light None(A.B) Cumulative area≤3%(C.D)
Visual Carbon Inclusions Cumulative area≤0.05%(A.B) Cumulative area≤3%(C.D)
Scratches by high intensity light None(A.B) Cumulative length≤1 x wafer diameter (C.D)
Edge chip None(A.B) 5 allowed,≤1mm each (C.D)
Contamination by high intensity light None  –
Usable area ≥ 90 %  –
Edge exclusion 3mm  –

SiC Seed Crystal Wafer:

Item Size Type Orientation Thickness MPD Polishing Condition
No.1 105mm 4H, N type C(0001)4deg.off 500+/-50um <=1/cm-2
No.2 105mm 4H, N type C(0001)4deg.off 500+/-50um <=1/cm-2

 

4H N-type or semi-insulating SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION: Thickness:330μm/430μm

4H N-type or semi-insulating SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION:Thickness:330μm/430μm

a-plane SiC Wafer, size: 40mm*10mm,30mm*10mm,20mm*10mm,10mm*10mm,specs below:

6H/4H N type                   Thickness:330μm/430μm or custom

6H/4H Semi-insulating     Thickness:330μm/430μm or custom

 

What is the barrier of SiC wafer becoming a wide application same as silicon wafer?

1.Due to the physical and chemical stability of SiC, the crystal growth of SiC is extremely difficult, which seriously hinders the development of SiC semiconductor devices and their electronic applications. 2.Since there are many kinds of SiC structures with different stacking sequences (also known as polymorphism) , the growth of electronic grade SiC crystal is hindered. The polymorphs of SiC, such as 3C SiC, 4H SiC and 6h SiC.

Please see below sub-catalogue:

4H N Type SiC
4H Semi-insulating SiC
SiC Ingots
Lapped Wafers
Polishing Wafer

100mm Silicon Carbide

6H SiC Wafer

PAM-XIAMEN Offers High Purity Semi-Insulating SiC substrate

4H Semi-insulating SiC

SiC(Silicon Carbide) Boule Crystal

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