PAM-XIAMEN offers Compound Semiconductor Wafer Material including SiC wafer and III-V group wafer: InSb wafer, InP wafer, InAs wafer, GaSb wafer, GaP wafer,GaN wafer,AlN wafer and GaAs wafer.
III-V compounds material include BN, BP, BAs, BSb, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InAs, InN, InP and InSb. Among them, BN, AlN, GaN and InN are Wurtzite structures, and the other 12 are zinc blende structures. Because pentavalent atoms have higher electronegativity than trivalent atoms, there are a few ionic bond components. Because of this, when the III-V materials are placed in the electric field, the lattice is easy to be polarized, and the ion displacement is helpful to increase the dielectric coefficient, if the electric field frequency is in the infrared range. Among the n-type semiconductors of GaAs materials, the electron mobility (mn-8500) is much higher than that of Si (mn-1450), so the movement speed is fast, and its application in high-speed digital integrated circuits is superior to that of Si semiconductors.
InP wafer
PAM-XIAMEN offers VGF InP(Indium Phosphide) wafer with prime or test grade including undoped, N type or semi-insulating. The mobility of InP wafer is different in different type, undoped one>=3000cm2/V.s, N type>1000 or 2000cm2V.s(depends on different doping concentration), P type: 60+/-10 or 80+/-10cm2/V.s(depends on different Zn doping concentration), and semi-insulting one>2000cm2/V.s, the EPD of Indium Phosphide is below 500/cm2 normally.
InAs wafer
PAM-XIAMEN offers Compound Semiconductor InAs wafer – indium arsenide wafer which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100). In addition, InAs single crystal has high electron mobility and is an ideal material for making Hall devices.
InSb wafer
PAM-XIAMEN offers Compound Semiconductor InSb wafer – Indium antimonide wafer which is grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100). Indium antimonide doped with isoelectronic(such as N doping) can reduce the defect density during the indium antimonide thin films manufacturing process.
GaSb Wafer
PAM-XIAMEN offers Compound Semiconductor GaSb wafer – gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100).
GaP Wafer
PAM-XIAMEN offers Compound Semiconductor GaP wafer – gallium phosphide wafer which is grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
