2-35.Prime Grade
Prime Grade:The highest grade of a silicon carbide wafer. SEMI indicates the bulk, surface, and physical properties required to label silicon carbide wafers as “Prime Wafers”.
2018-06-28meta-author
5-6-2 SiC RF Devices
The main use of SiC RF devices appears to lie in high-frequency solid-state high-power amplification at frequencies from around 600 MHz (UHF-band) to perhaps as high as a few gigahertz (X-band). As discussed in far greater detail in References 5, 6, [...]
2018-06-28meta-author
2-31.N type
A semiconductor has electrical conductivity between that of a conductor and an insulator. Semiconductors differ from metals in their characteristic property of decreasing electrical resistivity with increasing temperature.Semiconductors can also display properties of passing current more easily in one direction than the other, [...]
2018-06-28meta-author
5-4-4-2 SiC Epitaxial Growth Polytype Control
Homoepitaxial growth, whereby the polytype of the SiC epilayer matches the polytype of the SiC substrate, is accomplished by “step-controlled” epitaxy . Step-controlled epitaxy is based upon growing epilayers on an SiC wafer polished at an angle (called the [...]
2018-06-28meta-author
5-5-6 SiC Device Packaging and System Considerations
Hostile-environment SiC semiconductor devices and ICs are of little advantage if they cannot be reliably packaged and connected to form a complete system capable of hostile-environment operation. With proper material selection, modifications of existing IC packaging technologies appear [...]
2018-06-28meta-author
5-3-3 System Benefits of High-Power High-Temperature SiC Devices
Uncooled operation of high-temperature and high-power SiC electronics would enable revolutionary
improvements to aerospace systems. Replacement of hydraulic controls and auxiliary power units with
distributed “smart” electromechanical controls capable of harsh ambient operation will enable substantial
jet-aircraft weight savings, reduced [...]
2018-06-28meta-author