PAM XIAMEN offers 4″CZ Epitaxial Prime Silicon Wafer.
4″ Si epi wafer
Growth Method: CZ
100 +/- 0.5 mm diameter silicon
Orientation <111> 4deg off
P Type Boron doped 0.002 – 0.003 ohm cm
Front side polished – Epi ready
thickness 525 +/-25 um [...]
2019-07-05meta-author
The growth of cubic silicon carbide on silicon, namely 3C-SiC/Si, has been extensively studied at the University of South Florida over the past decade and numerous electronic and biomedical applications explored using this material system. The key step to 3C-SiC devices is the growth [...]
2020-03-17meta-author
Due to the wide band gap of SiC wafer, SiC does not absorb part or almost all of the visible light. The wavelength of the absorbed light depends on the band gap, the energy levels of the main impurities and the excited energy levels [...]
2021-03-05meta-author
Silicon Epi Wafers Sale
PAM XIAMEN offers Silicon Epi Wafers.
6″ Epitaxial Silicon Wafers
Item
Substrate
EPI
Comment
Size
Type
Res Ωcm
Surf.
Thick μm
Type
Res Ωcm
PAM3053
6″Øx675μm
n- Si:P[100]
0.001-0.002
P/EOx
0.016
n- Si:P
0.32-0.46
n/n+
4″ Epitaxial Silicon Wafers
Item
Substrate
EPI
Comment
Size
Type
Res Ωcm
Surf.
Thick μm
Type
Res Ωcm
PAM3053
4″Øx360μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
360 – 440
n/n+
PAM3054
4″Øx400μm
p- Si:B[111]
0.01-0.10
P/E
6.5
p- Si:B
3.6±10%
P/P/P+
22±1.5
p- Si:B
300±50
PAM3055
4″Øx525μm
p- Si:B[111]
0.01-0.02
P/E
8.1±1
p- Si:B
4.5±10%
P/P/P+
6.85±0.75
p- Si:B
0.75±0.15
PAM3056
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
10.5
p- Si:B
570±10%
p/p+
PAM3057
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.15 ±10%
P/P+
PAM3058
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.25±10%
P/P+
PAM3059
4″Øx525μm
p- Si:B[111]
0.001-0.005
P/E
20
p- Si:B
175±10%
P/P+
PAM3060
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
21
p- Si:B
150 [...]
2019-02-13meta-author
PAM XIAMEN offers KBr Potassium Bromide Crystal Substrate.
To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote.
Main parameters
Crystal structure
M3
Growth method
crystallization process
Crystal lattice parameters
a=5.596Å
Density
2.75(g/cm3)
Index of refraction
1.49025
Surface roughness
< 5 [...]
2019-03-12meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
3″
1500
P/E
5-7
SEMI Prime
n-type Si:P
[100]
3″
350
P/P
1-5
SEMI Prime
n-type Si:P
[100]
3″
350
P/P
1-25
SEMI Prime, TTV<1μm, Empak cst
n-type Si:P
[100] ±1°
3″
500
P/P
1-100
SEMI Prime, TTV<2μm, Empak cst
n-type Si:P
[100-4°] ±0.5°
3″
500
P/E
1-20
Prime
n-type Si:P
[100]
3″
650
P/P
1-10
Prime, TTV<2μm
n-type Si:P
[100]
3″
1000
P/P
1-5
SEMI Prime, hard cst
n-type Si:P
[100]
3″
1000
P/E
1-20
SEMI Prime
n-type Si:P
[100]
3″
6000
P/E
1-20
SEMI Prime, Individual cst
n-type Si:Sb
[100]
3″
300
P/E
0.02-0.04
SEMI Prime, in hard cassettes of 2 wafers
n-type Si:Sb
[100]
3″
381
P/E
0.008-0.020
SEMI Prime
n-type Si:As
[100]
3″
380
P/EOx
0.001-0.005
SEMI Prime, LTO Back-side seal [...]
2019-03-06meta-author