PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
2″
280
P/P
1-5
SEMI Prime,
Si:P
[100-6°]
2″
300
P/E
1-5
SEMI Prime,
n-type Si:P
[100]
2″
350
P/P
1-50
Test, Polished but dirty and scratched. Can be re-polished for additional fee, NO Flats
n-type Si:P
[100] ±1°
2″
400 ±15
P/P
1-10
SEMI Prime, TTV<3μm, Empak cst
n-type Si:P
[100]
2″
3175
P/E
1-3
Prime, NO Flats, Individual cst
n-type Si:P
[100] ±1.0°
2″
6000
P/E
1-10
SEMI Prime, , Individual cst
n-type Si:P
[100]
2″
300
P/P
0.8-1.0
SEMI Prime,
n-type Si:Sb
[100]
2″
300
P/E
0.01-0.02
SEMI Prime,
n-type Si:Sb
[100]
2″
500
P/P
0.01-0.02
SEMI Prime, , in [...]
2019-03-07meta-author
With the sudden outbreak of COVID-19, some vertical categories that are not usually paid attention to quickly became popular. Materials related to epidemic prevention and control, such as masks, goggles, and disinfectant, have become popular. Among them, UVC (Ultra Violet C radiation) LED with [...]
2022-05-30meta-author
Fabrication of ZnO nanorod/p-GaN high-brightness UV LED by microwave-assisted chemical bath deposition with Zn(OH)2–PVA nanocomposites as seed layer
Chemical solution deposition is a low-temperature and possibly the lowest-cost method of growing ZnO nanorods on a GaN substrate. However, most reported methods leave an interface layer [...]
2013-08-01meta-author
PAM XIAMEN offers PMN-PT Crystals.
10 x 10 x 0.5 mm PMN-PT Piezoelectric Crystal (111) Pb(Mg1/3Nb2/3)O3-PbTiO3 SSP
10 x 10 x 0.5 mm Pyroelectric Crystal PMN-PT (111) Pb(Mg1/3Nb2/3)O3-PbTiO3 SSP
5 x 10 x 0.5 mm PMNT Electro-Optic Crystal (001) Pack SSP
5 x 10 x 0.5 mm PMNT [...]
2019-03-14meta-author
PAM-XIAMEN offers 10*10mm2 undoped Freestanding GaN Substrate:
1. Specification of Undoped Freestanding GaN Wafer
Item
PAM-FS-GaN-50-U
Dimension
10 x 10.5 mm2
Thickness
380+/-50um
Orientation
C plane (0001) off angle toward M-axis 0.35 ±0.15°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5x 106 cm-2 (calculated by CL)*
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
2. Standard Method for Testing Surface Roughness of Undoped Gallium [...]
2020-08-14meta-author
GT Advanced Technologies Enters Development and Licensing Agreement with Soitec
February 25, 2013…GT Advanced Technologies of Nashua, New Hampshire, and Soitec of Bernin, France announced a development and licensing agreement. The agreement will allowing GT to develop, manufacture and commercialize a high-volume, multi-wafer HVPE system [...]
2013-02-28meta-author