Silicon ingot, per SEMI, G Ø76mm
FZ n-type Si:P[100]±2.0°
Ro=(1,500-7,000)Ohmcm,
Ground Ingot, NO Flats,
MCC Lifetime>1000µs,
Oxygen<1E16/cc, Carbon<1E16/cc,
Adequately packed, CofC: present.
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates! Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 6 SSP Boron P+ 100 57,5 ± 2,5 100 ± 1 0.0 ± 5.0 ° 0.001 – 100 Ohmcm 150 ± 0.5 mm 675 ± 200 µm 100 20 100 6 SSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5 ° > [...]
PAM XIAMEN offers4″ FZ Prime Silicon Wafer-6 Substrate Monocrystalline Silicon Diameter 100 ±0.3mm Growth method Fz Lifetime>1000µsec Thickness 600± 25µm Type/Dopant N/Phosphorus Orientation[110]±0.5° Resistivity>5,000 Ωcm TTV<10µm Bow/Warp<40µm Primary Flat [email protected][111]±<0.25° Primary Flat Length 32.5± 2.5mm Secondary Flat [email protected][111]70.5° CW from primary flat Front side finish [...]
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InP substrate and other related products and services, can offer InP substrate for Fiber optics network components. Our monocrystalline InP crystal substrate has excellent properties, a series of doping experiments have determined the effective segregation coefficient [...]
M-Plane GaN Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy M-plane GaN epilayers have been directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy using a low temperature GaN nucleation layer. The m-plane GaN surface is optically smooth and mirror-like, with rms [...]
Getting to 450 mm Wafer Sooner As device circuits continue to get smaller, the wafers that they are made from are getting larger — again. A few years ago device manufacturers — both vertically integrated companies and independent foundries — pushed maximum wafer diameters from [...]
PAM XIAMEN offers 4″ Epitaxial Silicon Wafer. If necessary, we can do SRP (spreading resistance profile) test for you. Item Parameter Spec Unit 1 Growth Method CZ 2 Diameter 100+/-0.5 mm 3 Type-Dopant P- Boron 4 Resistivity 0.002 – 0.003 ohm-cm 5 Resistivity Radial Variation <10 % 6 Crystal Orientation <111> 4 +/- 0.5 degree 7 Primary Flat Orientation Semi degree Length Semi mm 8 Secondary Flat Orientation Semi degree Length semi mm 9 Thickness 525 +/- 25 μm 10 TTV ≦10 μm 11 Bow ≦40 μm 12 Warp ≦40 μm 13 Front Surface polished 14 Backside etched — 5000 +/-10% Angstoms SiO2 15 Surface Appearance no Cratches, haze, edge chips, orange peel, defects,contamination — 16 Edge [...]
