4″ Silicon Wafer-6

PAM XIAMEN offers 4″ Silicon Wafer.

Material Orient. Diam. Thck
(μm)
Surf. Resistivity
Ωcm
Comment
p-type Si:B [100] 4″ 300 P/P 5-10 SEMI Test, Scratched and unsealed. Can be re-polished for extra fee
p-type Si:B [100] 4″ 380 P/E 5-10 SEMI TEST (in Opened cassette), 2Flats
p-type Si:B [100] 4″ 380 P/E 5-10 SEMI Prime
p-type Si:B [100] 4″ 380 P/E 5-10 SEMI TEST (with bad surface)
p-type Si:B [100] 4″ 380 P/E 5-10 SEMI Prime, hard cst, Back-side slightly darker than normal
p-type Si:B [100] 4″ 380 P/E 5-10 SEMI Test, Dirty wafers, can be cleaned for extra fee
p-type Si:B [100] 4″ 380 BROKEN 5-10 Broken P/E Wafers, in Empak
p-type Si:B [100] 4″ 380 BROKEN 5-10 Broken P/E Wafers, in Empak
p-type Si:B [100] 4″ 380 BROKEN 5-10 Broken (largest piece is ~30%), in Empak
p-type Si:B [100] 4″ 525 P/E 5-10 SEMI Prime, TTV<5μm
p-type Si:B [100] 4″ 525 P/E 5-10 SEMI Prime, TTV<4μm, Bow<15μm, Warp<30μm, Cassettes of 6 and 11 wafers
p-type Si:B [100] 4″ 525 P/E 5-10 SEMI Test, Dirty and scratched
p-type Si:B [100] 4″ 525 P/E 5-10 SEMI Prime
p-type Si:B [100] 4″ 1000 P/E 5-10 SEMI Prime, TTV<5μm
p-type Si:B [100] 4″ 525 P/E 4.1-4.5 Prime, NO Flats
p-type Si:B [100] 4″ 250 P/E 1-10 SEMI Prime
p-type Si:B [100-4.0°] ±0.5° 4″ 275 P/E 1-30 SEMI Prime, TTV<5μm
p-type Si:B [100] 4″ 300 P/P 1-10 SEMI Test, Surface Defects
p-type Si:B [100-4° towards[110]] ±0.5° 4″ 300 P/E 1-10 SEMI Test, Wafers with pits
p-type Si:B [100] 4″ 381 ±5 P/P 1-30 SEMI Prime, TTV<5μm, Bow<8μm, Warp<20μm
p-type Si:B [100] 4″ 475 P/E 1-10 SEMI Prime, Epi edges for 150μm epi growth

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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